The DOI matches its Crossref record; 32 of the 32 references it cites were found in a registry or an index.
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
Abstract
The history of development for gallium-nitride-based light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, which has led to native bulk-GaN-based LEDs with unprecedented performance characteristics that portend a disruptive shift in LED output power density and the corresponding cost of generating light.
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Cites
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Nakamura, S., Mukai, T., & Senoh, M. (1994) · Applied Physics Letters · doi:10.1063/1.111832 · Cited by 3,823
Self-citationSpontaneous polarization and piezoelectric constants of III-V nitrides
Bernardini, F., Fiorentini, V., & Vanderbilt, D. (1997) · Physical Review B · doi:10.1103/physrevb.56.r10024 · Cited by 3,126
Defects in epitaxial multilayers I. Misfit dislocations
Matthews, J. (1974) · Journal of Crystal Growth · doi:10.1016/0022-0248(74)90424-2 · Cited by 3,102
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986) · Applied Physics Letters · doi:10.1063/1.96549 · Cited by 2,217
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l2112 · Cited by 2,002
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
Krames, M. R., Shchekin, O. B., Mueller-Mach, R., Mueller, G. O., Zhou, L., Harbers, G., & Craford, M. G. (2007) · Journal of Display Technology · doi:10.1109/jdt.2007.895339 · Cited by 1,939
Self-citationThe Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
Nakamura, S. (1998) · Science · doi:10.1126/science.281.5379.956 · Cited by 1,886
Self-citationNakamura, S., & Fasol, G. (1997) · Springer eBooks · doi:10.1007/978-3-662-03462-0 · Cited by 1,730
Self-citationHigh-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
Nakamura, S., Senoh, M., Iwasa, N., et al. (1995) · Japanese Journal of Applied Physics · doi:10.1143/jjap.34.l797 · Cited by 1,508
Self-citationTHE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Maruska, H. P., & Tietjen, J. J. (1969) · Applied Physics Letters · doi:10.1063/1.1652845 · Cited by 1,350
Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs
Hwang, D., Mughal, A., Pynn, C. D., Nakamura, S., & DenBaars, S. P. (2017) · Applied Physics Express · doi:10.7567/apex.10.032101 · Cited by 265
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Metadata
- Authors
- Nakamura, S., & Krames, M. R.
- Venue
- Proceedings of the IEEE
- Published
- 2013-10
- Volume
- 101
- Issue
- 10
- Pages
- 2211-2220
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W1972712827
- Cited by
- 390
- References
- 32
- FWCI
- 25.49
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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