Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
Open accessAbstract
We developed top-free-type perpendicularly magnetized magnetic tunnel junctions (p-MTJs) with a synthetic antiferromagnetic (SAF) bottom reference layer consisting of [Co/Pt] superlattice and Ru spacer layers. We successfully demonstrated practical properties such as a low resistance–area ( RA ) product (<3 Ω µm 2 ), ultralow writing voltage (<200 mV) for spin-transfer-torque (STT) switching, and high annealing stability (up to 350 °C) in the same p-MTJ cells. Moreover, the p-MTJs showed clear bi-stable states even at zero external magnetic fields, thanks to the low stray field from the SAF structure. The results are promising for both high integration and ultralow-voltage operation of STT magnetoresistive random access memory (MRAM).
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Top-free-type perpendicularly magnetized MTJs with a synthetic antiferromagnetic bottom reference layer achieved a wide magnetic field range for bistable states around zero magnetic field and a lower switching current density, resulting in a very low writing voltage (<200 mV).
“Recently, we have succeeded in developing top-free-type perpendicularly magnetized MTJs (p-MTJs) with a synthetic antiferromagnetic bottom reference layer, thereby achieving a wide magnetic field range for the bistable states around zero magnetic field as well as a lower switching current density, which resulted in a very low writing voltage (<200 mV).17)”
From Spin dice: A scalable truly random number generator based on spintronics (2014) · cites this paper as [17]
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Cites
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Ikeda, S., Miura, K., Yamamoto, H., Mizunuma, K., Gan, H., Endo, M., Kanai, S., Hayakawa, J., Matsukura, F., & Ohno, H. (2010) · Nature Materials · doi:10.1038/nmat2804 · Cited by 3,633 · see citing works
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
Yuasa, S., Nagahama, T., Fukushima, A., Suzuki, Y., & Ando, K. (2004) · Nature Materials · doi:10.1038/nmat1257 · Cited by 3,340 · see citing works
Self-citationGiant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Parkin, S., Kaiser, C., Panchula, A. F., Rice, P. M., Hughes, B. P., Samant, M. G., & Yang, S. (2004) · Nature Materials · doi:10.1038/nmat1256 · Cited by 3,327 · see citing works
230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
Djayaprawira, D. D., Tsunekawa, K., Nagai, M., Maehara, H., Yamagata, S., Watanabe, N., Yuasa, S., Suzuki, Y., & Ando, K. (2005) · Applied Physics Letters · doi:10.1063/1.1871344 · Cited by 970 · see citing works
Self-citationSpin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
Worledge, D. C., Hu, G., Abraham, D. W., Sun, J., Trouilloud, P. L., Nowak, J. J., Brown, S. L., Gaidis, M. C., O'Sullivan, E. J., & Robertazzi, R. P. (2011) · Applied Physics Letters · doi:10.1063/1.3536482 · Cited by 716 · see citing works
Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier
Yuasa, S., & Djayaprawira, D. D. (2007) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/40/21/r01 · Cited by 649 · see citing works
Self-citationSato, H., Yamanouchi, M., Ikeda, S., et al. (2012) · Applied Physics Letters · doi:10.1063/1.4736727 · Cited by 309 · see citing works
Nakayama, M., Kai, T., Shimomura, N., Amano, M., Kitagawa, E., Nagase, T., Yoshikawa, M., Kishi, T., Ikegawa, S., & Yoda, H. (2008) · Journal of Applied Physics · doi:10.1063/1.2838335 · Cited by 307 · see citing works
Yuasa, S., Fukushima, A., Nagahama, T., Ando, K., & Suzuki, Y. (2004) · Japanese Journal of Applied Physics · doi:10.1143/jjap.43.l588 · Cited by 296 · see citing works
Self-citationUltrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions
Yakushiji, K., Saruya, T., Kubota, H., et al. (2010) · Applied Physics Letters · doi:10.1063/1.3524230 · Cited by 279 · see citing works
Self-citationWorledge, D. C., & Trouilloud, P. L. (2003) · Applied Physics Letters · doi:10.1063/1.1590740 · Cited by 240 · see citing works
Yakata, S., Kubota, H., Suzuki, Y., et al. (2009) · Journal of Applied Physics · doi:10.1063/1.3057974 · Cited by 185 · see citing works
Self-citationYoda, H., Kishi, T., Nagase, T., Yoshikawa, M., Nishiyama, K., Kitagawa, E., Daibou, T., Amano, M., Shimomura, N., Takahashi, S., et al. (2010) · Current Applied Physics · doi:10.1016/j.cap.2009.12.021 · Cited by 179 · see citing works
Self-citationEnhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer
Kubota, H., Ishibashi, S., Saruya, T., et al. (2012) · Journal of Applied Physics · doi:10.1063/1.3679393 · Cited by 98 · see citing works
Self-citationYakushiji, K., Kenji, N. O. M. A., Saruya, T., et al. (2010) · Applied Physics Express · doi:10.1143/apex.3.053003 · Cited by 97 · see citing works
Self-citationHigh Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer
Jan, G., Wang, Y.-J., Moriyama, T., et al. (2012) · Applied Physics Express · doi:10.1143/apex.5.093008 · Cited by 90 · see citing works
Kang, S. H., & Lee, K. (2013) · Acta Materialia · doi:10.1016/j.actamat.2012.10.036 · Cited by 67 · see citing works
Mizunuma, K., Yamanouchi, M., Ikeda, S., et al. (2011) · Applied Physics Express · doi:10.1143/apex.4.023002 · Cited by 49 · see citing works
Ultra-thin Co/Pd multilayers with enhanced high-temperature annealing stability
Gottwald, M. G., Lee, K., Kan, J. J., et al. (2013) · Applied Physics Letters · doi:10.1063/1.4791577 · Cited by 44 · see citing works
Yamane, K., Higo, Y., Uchida, H., Nanba, Y., Sasaki, S., Ohmori, H., Bessho, K., & Hosomi, M. (2013) · IEEE Transactions on Magnetics · doi:10.1109/tmag.2013.2246141 · Cited by 30 · see citing works
MgO overlayer thickness dependence of perpendicular magnetic anisotropy in CoFeB thin films
Lam, D. D., Bonell, F., Miwa, S., et al. (2013) · Journal of the Korean Physical Society · doi:10.3938/jkps.62.1461 · Cited by 24 · see citing works
Numerical Study on Spin Torque Switching in Thermally Activated Region
Taniguchi, T., Shibata, M., Marthaler, M., et al. (2012) · Applied Physics Express · doi:10.1143/apex.5.063009 · Cited by 19 · see citing works
Flagged first, then by citations
Research works printed but not linked: 5
- T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano, S. Takahashi, M. Nakayama, N. Shimomura, H. Aikawa, S. Ikegawa, S. Yuasa, K. Yakushiji, H. Kubota, A. Fukushima, M. Oogane, T. Miyazaki, and K. Ando: IEDM Tech. Dig., 2008, p. 309. · DOI
- K. Tsuchida, T. Inaba, K. Fujita, Y. Ueda, T. Shimizu, Y. Asao, T. Kajiyama, M. Iwayama, K. Sugiura, S. Ikegawa, T. Kishi, T. Kai, M. Amano, N. Shimomura, H. Yoda, and Y. Watanabe: ISSCC Tech. Dig., 2010, p. 258. · DOI
- H. Yoda, S. Fujita, N. Shimomura, E. Kitagawa, K. Abe, K. Nomura, H. Noguchi, and J. Ito: IEDM Tech. Dig., 2012, p. 11.3. · DOI
- E. Kitagawa, S. Fujita, K. Nomura, H. Noguchi, K. Abe, K. Ikegami, T. Daibou, Y. Kato, C. Kamata, S. Kashiwada, N. Shimomura, J. Ito, and H. Yoda: IEDM Tech. Dig., 2012, p. 29.4. · DOI
- J.-H. Park, Y. Kim, W. C. Lim, J. H. Kim, S. H. Park, J. H. Kim, W. Kim, K. W. Kim, J. H. Jeong, K. S. Kim, H. Kim, Y. J. Lee, S. C. Oh, J. E. Lee, S. O. Park, S. Watts, D. Apalkov, V. Nikitin, M. Krounbi, S. Jeong, S. Choi, H. K. Kang, and C. Chung: VLSI Tech. Dig., 2012, p. 57. · DOI
Cited by
Sorted by citations
Spin dice: A scalable truly random number generator based on spintronics
Fukushima, A., Seki, T., Yakushiji, K., Kubota, H., Imamura, H., Yuasa, S., & Ando, K. (2014) · Applied Physics Express · doi:10.7567/apex.7.083001 · Cited by 238 · see citing works
Self-citation
- Authors
- Yakushiji, K., Fukushima, A., Kubota, H., Konoto, M., & Yuasa, S.
- Affiliations
- National Institute of Advanced Industrial Science and Technology (JP)
- Venue
- Applied Physics Express
- Publisher
- IOP Publishing
- Published
- 2013-11-01
- Volume
- 6
- Issue
- 11
- Pages
- 113006
- ISSN
- 1882-0778 (ISSN-L)
- 1882-0786
- OpenAlex
- W2109235070
- Cited by
- 76
- References
- 22
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 4 · 2023: 4 · 2022: 5 · 2021: 7 · 2020: 2 · 2019: 5 · 2018: 6 · 2017: 8 · 2016: 10 · 2015: 14 · 2014: 8
- FWCI
- 5.49
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Applied Physics Express (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Magnetic properties of thin films
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic Properties of Alloys
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Keywords
- spin-transfer torque, magnetic tunnel junctions, synthetic antiferromagnet, Ru spacer layer, resistance-area product, annealing stability, stray field, MRAM
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
