Cited by 179Magnetic properties of thin filmsMagnetic Properties of AlloysQuantum and electron transport phenomena

High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

Yoda, Hiroaki, Kishi, Tatsuya, Nagase, Toshihiko, Yoshikawa, Masatoshi, Nishiyama, Katsuya, Kitagawa, Eiji, Daibou, Tadaomi, Amano, Minoru +18 more·2010·Current Applied Physics

Integrity signals

Registry

Crossref · 10.1016/j.cap.2009.12.021

Cites

4 of 4 references verified0 citation errors · 0 not checkable

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  • The basic mechanism for generating a random bit in spin dice is the same as that for writing a data bit in STT-MRAM, except the switching probability is set to 0.5 for spin dice whereas it should be 1.0 for STT-MRAM.

    “The basic mechanism for generation of an RB is the same as that for writing a data bit in STT magnetic random access memory (STT-MRAM).16) The main difference is that the switching probability is set to be 0.5 for generation of an RB in the spin dice, whereas it should be 1.0 for STT-MRAM.”

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Authors
Yoda, H., Kishi, T., Nagase, T., Yoshikawa, M., Nishiyama, K., Kitagawa, E., Daibou, T., Amano, M., Shimomura, N., Takahashi, S., Kai, T., Nakayama, M., Aikawa, H., Ikegawa, S., Nagamine, M., Ozeki, J., Mizukami, S., Oogane, M., Ando, Y., Yuasa, S., Yakushiji, K., Kubota, H., Suzuki, Y., Nakatani, Y., Miyazaki, T., & Ando, K.
Affiliations
  • Toshiba (Japan) (JP)
  • Tohoku University (JP)
  • National Institute of Advanced Industrial Science and Technology (JP)
  • The University of Osaka (JP)
  • University of Electro-Communications (JP)
Corresponding author
Yoda, Hiroaki
Venue
Current Applied Physics
Publisher
Elsevier BV
Published
2010-01
Volume
10
Issue
1
Pages
e87-e89
ISSN
1567-1739 (ISSN-L)
OpenAlex
W2005210361
Cited by
179
References
4
Citations by year
2026: 2 · 2025: 3 · 2024: 5 · 2023: 5 · 2022: 6 · 2021: 7 · 2020: 15 · 2019: 7 · 2018: 17 · 2017: 11 · 2016: 15 · 2015: 19 · 2014: 17 · 2013: 20 · 2012: 16
FWCI
5.58
Type
journal article
Language
en
Open access
closed
Locations
Current Applied Physics (publishedVersion)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Magnetic properties of thin films
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic Properties of Alloys
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
Keywords
spin-transfer torque, perpendicular magnetic tunnel junctions, MRAM, switching current, high-density memory

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