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Material science and device physics in SiC technology for high-voltage power devices
Open accessAbstract
Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600–1700 V) SiC Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.
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“To address these challenges, Wide-Bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride (GaN), have emerged as materials that enable high-voltage, high-temperature, and high-speed switching owing to their Wide-Bandgap, nearly tenfold higher critical electric field, and superior thermal conductivity [1,2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“Accordingly, WBG semiconductors are positioned to overcome key constraints of Si technologies in electric vehicles, aerospace, and renewable energy [2,3].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“SiC and GaN can operate under high-voltage and high-temperature conditions thanks to their Wide-Bandgaps (2.9-3.4 eV) and critical electric field strengths (2.2-4 MV cm -1 ), outperforming conventional Si in these regimes [2-5].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“SiC exhibits high thermal conductivity (3.3-4.9 W cm -1 K -1 ; approximately 330-490 W m -1 K -1 ), enabling superior heat removal.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“For substrates, SiC (in GaNon-SiC) offers a significant thermal advantage, exhibiting high thermal conductivity of 3.3-4.9 W cm -1 K -1 (approximately 330-490 W m -1 K -1 ).”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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“Among WBG materials, GaN poses greater thermalmanagement challenges than SiC due to its relatively low thermal conductivity [1,2,29].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“While the advantages of WBG semiconductors such as SiC and GaN are well established, ensuring their long-term reliability and accurately forecasting their operational lifespan remain critical challenges [1,2,59].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe source backs part of the claim, not all of it — or backs it for a different population, condition or comparison.
In the citing paper
“In SiC, BPDs and threading edge dislocations (TEDs) shorten carrier lifetime and raise leakage current [2], while gate-oxide traps and V th instability are additional concerns [2,64].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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In the citing paper
“Of these, channel and JFET resistances dominate at lower voltage ratings, whereas the drift layer becomes the main contributor at higher voltages (above 3 kV) [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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“GaN's thermal conductivity decreases with temperature [2,6].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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In the citing paper
“whereas GaN faces challenges in thermal dissipation and reliability due to its lower thermal conductivity and heterojunction architecture [1,2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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In the citing paper
“Silver-sintered joints provide excellent electrical/thermal conductivity and high-temperature stability but face electromigration (EM) and cost challenges [2,30-35].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“GaN-on-Diamond can further reduce channel temperature owing to the diamond substrate's thermal conductivity exceeding 700 W m -1 K -1 , thereby enhancing both performance and lifetime [1,2,28,29].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“Copper-sintered joints offer comparable performance with improved EM resistance, though oxidation control and process windows remain nontrivial [1-3,31,36-38].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“In parallel, silver and copper microparticle sintering and transient liquid-phase bonding are recognized as reliable assembly approaches that combine excellent electrical/thermal conductivity with high-temperature stability [2,3,30] (Figure 2).”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“TBR is a significant component of the overall thermal resistance in GaN-on-SiC, where AlN nucleation and defect layers elevate interface resistance.”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
Experimental — accuracy not yet measuredThe check wasn’t confident either way, so it gives no verdict — never disputed.
In the citing paper
“To mitigate TBR, surface-activated bonding (SAB) has emerged as a promising interface technology, enabling high-quality interfaces and thermal boundary conductance (TBC) values approaching 230 MW m -2 K -1 [1,2,39].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [2]
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Citations
Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Physics of Semiconductor Devices
Colinge, J.-P., & Colinge, C. (2002) · Kluwer Academic Publishers eBooks · doi:10.1007/b117561 · Cited by 14,074
Semiconductor Material and Device Characterization
SCHRODER, D. K. (2005) · Wiley eBooks · doi:10.1002/0471749095 · Cited by 7,472
Semiconductor Devices: Physics and Technology
Sze, S. M. (1985) · Cited by 4,098
Li, M., & Li, M. (2005) · Kluwer Academic Publishers eBooks · doi:10.1007/0-306-47622-3_5 · Cited by 3,973
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
Lang, D. V. (1974) · Journal of Applied Physics · doi:10.1063/1.1663719 · Cited by 3,741
Fundamentals of Power Semiconductor Devices
Baliga, B. J. (2008) · Springer eBooks · doi:10.1007/978-0-387-47314-7 · Cited by 2,241
Hull, D., & Bacon, D. J. (2011) · Materials Today · doi:10.1016/s1369-7021(11)70217-6 · Cited by 1,504
(2001) · Elsevier eBooks · doi:10.1016/b978-0-7506-4681-9.x5000-7 · Cited by 1,417
Principles of Power Electronics
Kassakian, J. G., Perreault, D. J., Verghese, G. C., & Schlecht, M. F. (2023) · Cambridge University Press eBooks · doi:10.1017/9781009023894 · Cited by 1,395
Flagged first, then by citations
10 of the 304 references couldn’t be matched to a known paper.
Research works printed but not linked: 16
- Dmitriev, 1983, Sov. Phys. Semicond., 17, 686
- Greulich-Weber, 1997, Phys. Status Solidi A, 162, 95, 10.1002/1521-396X(199707)162:1<95::AID-PSSA95>3.0.CO%3B2-X · DOI
- Schöner, 1996, Inst. Phys. Conf. Ser., 142, 493
- Sugiyama, 1996, Inst. Phys. Conf. Ser., 142, 489
- Larkin, 1997, Phys. Status Solidi B, 202, 305, 10.1002/1521-3951(199707)202:1<305::AID-PSSB305>3.0.CO%3B2-9 · DOI
- Glass, 1997, Phys. Status Solidi B, 202, 149, 10.1002/1521-3951(199707)202:1<149::AID-PSSB149>3.0.CO%3B2-M · DOI
- Powell, 1997, Phys. Status Solidi B, 202, 529, 10.1002/1521-3951(199707)202:1<529::AID-PSSB529>3.0.CO%3B2-E · DOI
- Dalibor, 1997, Phys. Status Solidi A, 162, 199, 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO%3B2-0 · DOI
- Itoh, 1996, Inst. Phys. Conf. Ser., 142, 685
- Itoh, 1997, Phys. Status Solidi A, 162, 389, 10.1002/1521-396X(199707)162:1<389::AID-PSSA389>3.0.CO%3B2-X · DOI
- Cooper, 1997, Phys. Status Solidi A, 162, 305, 10.1002/1521-396X(199707)162:1<305::AID-PSSA305>3.0.CO%3B2-7 · DOI
- Afanasev, 1997, Phys. Status Solidi A, 162, 321, 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO%3B2-F · DOI
- Ouisse, 1997, Phys. Status Solidi A, 162, 339, 10.1002/1521-396X(199707)162:1<339::AID-PSSA339>3.0.CO%3B2-G · DOI
- Dhar, 2010, J. Appl. Phys., 108, 10.1063/1.3484043 · DOI
- Zetterling, 2002, 10.1049/PBEP002E · DOI
- Special Issue on Silicon Carbide Devices and Technology, 2008, IEEE Trans. Electron Devices, 55
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Ferracioli, R. T., Rodrigues, C. G., & Luzzi, R. (2020) · Physics of the Solid State · doi:10.1134/s1063783420010102 · Cited by 6
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Sochor, P., Huerner, A., Sun, Q., & Elpelt, R. (2023) · International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · doi:10.23919/icpe2023-ecceasia54778.2023.10213920 · Cited by 5
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Dojima, D., Tayake, K., Shigematsu, K., Toda, K., & Kaneko, T. (2024) · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · doi:10.4028/p-6lkxar · Cited by 5
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Lee, S., Kim, S., Kang, H. J., Kim, H., Seok, O., Moon, J. H., Bahng, W., Kim, H. J., & Ha, M.-W. (2019) · Physica Scripta · doi:10.1088/1402-4896/ab432c · Cited by 5
Uruma, T., Tsunemitsu, C., Terao, K., Nakazawa, K., Satoh, N., Yamamoto, H., & Iwata, F. (2019) · AIP Advances · doi:10.1063/1.5125163 · Cited by 5
Sato, S., Kobayashi, K., Mori, Y., Hisamoto, D., & Shima, A. (2020) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/ab6864 · Cited by 5
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Radulović, V., Ambrožič, K., Capan, I., Bernat, R., Ereš, Z., Pastuović, Ž., Sarbutt, A., Ohshima, T., Yamazaki, Y., Makino, T., et al. (2021) · EPJ Web of Conferences · doi:10.1051/epjconf/202124716002 · Cited by 5
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Sun, J., Wei, J., Zheng, Z., Wang, Y., & Chen, K. J. (2019) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2019.8757639 · Cited by 5
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Sun, Q.-J., Zhang, Y., Song, Q., Tang, X.-Y., Zhang, Y., Li, C., Zhao, Y., & Zhang, Y. (2017) · Chinese Physics B · doi:10.1088/1674-1056/26/12/127701 · Cited by 5
Cuong, V. V., Ishikawa, S., Maeda, T., Sezaki, H., Yasuno, S., Koganezawa, T., Miyazaki, T., & Kuroki, S.-I. (2019) · Japanese Journal of Applied Physics · doi:10.7567/1347-4065/ab47ac · Cited by 5
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Huet, S., Guerber, S., Rolland, E., Szelag, B., Gelineau, G., Moulin, A., Prudkovskiy, V., Troutot, N., Licitra, C., Gergaud, P., et al. (2024) · Materials science forum · doi:10.4028/p-cb7qw4 · Cited by 4
Luo, L., Zhong, Y., Cheong, K. Y., Zhang, R., Wang, T., Yuan, D., Linewih, H., Li, S., Cui, Y., Xu, M., et al. (2025) · physica status solidi (a) · doi:10.1002/pssa.202400840 · Cited by 4
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Terao, Y., Hosoi, T., Kobayashi, T., Shimura, T., & Watanabe, H. (2022) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps48227.2022.9764433 · Cited by 4
Yu, K., Liu, Y., Zhang, W., Chen, H., Li, C., Ding, J., Wang, J., Zhai, D., & Wang, Y. (2023) · Micro and Nanostructures · doi:10.1016/j.micrna.2023.207506 · Cited by 4
Ai, W., & Chen, X. (2023) · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · doi:10.1116/6.0002686 · Cited by 4
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Okeil, H., Erlbacher, T., & Wachutka, G. (2024) · Advanced Electronic Materials · doi:10.1002/aelm.202300531 · Cited by 4
Metadata
- Authors
- Kimoto, T.
- Affiliations
- Kyoto University (JP)
- Corresponding author
- Kimoto, Tsunenobu
- ORCID
- Kimoto, Tsunenobu
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2015-03-23
- Volume
- 54
- Issue
- 4
- Pages
- 040103
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2092874501
- Cited by
- 1,176
- References
- 304
- Citations by year
- 2026: 112 · 2025: 129 · 2024: 132 · 2023: 104 · 2022: 113 · 2021: 115 · 2020: 104 · 2019: 116 · 2018: 109 · 2017: 76 · 2016: 51 · 2015: 14
- FWCI
- 40.18
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Japanese Journal of Applied Physics (publishedVersion)
- Funders
- Kwansei Gakuin University
- Soochow University
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Ga2O3 and related materials
- Keywords
- silicon carbide, wide bandgap semiconductors, high-voltage power devices, Schottky diodes, SiC MOSFET, impurity doping, point defects, extended defects, device reliability, power semiconductor devices
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