Iannuzzo, Francesco

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

Reigosa, P. D., Iannuzzo, F., Luo, H., & Blaabjerg, F. (2017) · IEEE Transactions on Industry Applications

Silicon Carbide Semiconductor TechnologiesMultilevel Inverters and Converters

Cited by 97

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Luo, H., Iannuzzo, F., & Turnaturi, M. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics

Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materials

Cited by 82

Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules

Wu, R., Smirnova, L., Wang, H., Iannuzzo, F., & Blaabjerg, F. (2015) · 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

Silicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise Suppression

Cited by 47

Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs

Ceccarelli, L., Bahman, A. S., & Iannuzzo, F. (2019) · Microelectronics Reliability

Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materials

Cited by 26

Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules

Luo, H., Iannuzzo, F., Blaabjerg, F., Li, W., & He, X. (2017) · IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society

Silicon Carbide Semiconductor TechnologiesElectronic Packaging and Soldering Technologies

Cited by 16