Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules
Abstract
In this paper, a separation test method for eliminating the effects of different current densities on the bond wires is proposed. The separation test method makes it possible to study the effect of different current density on the fatigue damage of bond wires without changing the temperature swing and average temperature during the test. By analyzing the output characteristics of the linear region of MOSFET, the constraint relations among the gate voltage, on-state voltage drop and junction temperature are revealed in this paper. The one-to-one correspondence between gate voltage and conduction power loss can be used to adjust the current density under fixed temperature swing and average temperature. The commercial Silicon Carbide (SiC) MOSFET modules are tested to experimentally verify the proposed method. Finally, the effectiveness of proposed test method is validated by the experimental results.
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CTE mismatch at bond-wire can cause bond-wire lift-off and heel crack, which increases on-resistance.
“CTE mismatch at bond-wire can cause bond-wire lift-off and heel crack, which increases on-resistance [41], [42].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [42]
Package-related failure mechanisms occur due to coefficient of thermal expansion (CTE) mismatch among different layers in the device.
“The package-related failure mechanisms occur due to the coefficient of thermal expansion (CTE) mismatch among different layers in the device.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [42]
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Self-citationPower cycling results for different control strategies
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Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221 · see citing works
Tran, S.-H., Khatir, Z., Lallemand, R., Ibrahim, A., Ousten, J.-P., Ewanchuk, J., & Mollov, S. V. (2019) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2847234 · Cited by 26 · see citing works
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works
“CTE mismatch at bond-wire can cause bond-wire lift-off and heel crack, which increases on-resistance [41], [42].”
Background
- Authors
- Luo, H., Iannuzzo, F., Blaabjerg, F., Li, W., & He, X.
- Affiliations
- Aalborg University (DK)
- Università degli studi di Cassino e del Lazio Meridionale (IT)
- Zhejiang University (CN)
- Venue
- IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
- Publisher
- IEEE
- Published
- 2017-10
- Pages
- 1525-1530
- ISSN
- 1553-572X (ISSN-L)
- OpenAlex
- W2773493276
- Cited by
- 16
- References
- 12
- Citations by year
- 2026: 1 · 2025: 1 · 2024: 1 · 2023: 1 · 2021: 4 · 2019: 5 · 2018: 3
- FWCI
- 3.10
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Annual Conference of the IEEE Industrial Electronics Society (IECON) (publishedVersion)
- VBN Forskningsportal (Aalborg Universitet) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon and Solar Cell Technologies
- Keywords
- current density, temperature swing, mean temperature, gate voltage, on-state voltage drop, conduction losses, junction temperature, power cycling
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