Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs
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Device thermal impedance, saturation current, and miller capacitance are other parameters for aging monitoring.
“The device's thermal impedance [75], saturation current [76], and miller capacitance [77] are other parameters for aging monitoring.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [75]
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(2008)
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“The device’s thermal impedance [75], saturation current [76], and miller capacitance [77] are other parameters for aging monitoring.”
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- Authors
- Ceccarelli, L., Bahman, A. S., & Iannuzzo, F.
- Affiliations
- Aalborg University (DK)
- Corresponding author
- Ceccarelli, L.
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2019-09
- Volume
- 100-101
- Pages
- 113336
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W2976319589
- Cited by
- 26
- References
- 28
- Citations by year
- 2026: 2 · 2025: 2 · 2024: 5 · 2023: 7 · 2021: 5 · 2020: 3 · 2019: 2
- FWCI
- 0.90
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Microelectronics Reliability (publishedVersion)
- VBN Forskningsportal (Aalborg Universitet) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- SiC power MOSFETs, device aging, electro-thermal modeling, parameter drift, threshold voltage degradation, package parasitics, traction inverter, thermal stress, switching behavior
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