Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules
Open accessAbstract
In silicon carbide (SiC) power MOSFETs, threshold voltage instability under high-temperature conditions has potential reliability threats to long-term operation. In this paper, the threshold voltage shifts caused by the instability mechanisms in accelerated power cycling tests for SiC MOSFETs are investigated. In conventional power cycling tests, the positive threshold voltage shift can cause successive ON-state resistance increases, which can sequentially increase junction temperature variations gradually under fixed test conditions. In order to distinguish the increased die voltage drop from the bond wire resistance degradation, an independent measurement method is used during the power cycling tests. As the number of cycle increases, SiC die degradation can be observed independently of bond wire increases during the tests. It is studied that the SiC die degradation is associated with the threshold voltage instability mechanisms. Unlike the bond wire lift-off failure, the die degradation and the related die resistance increase can stop the power cycling test earlier than expected. In addition, a new test protocol considering the die degradation is proposed for the power cycling test. By means of power device analyzer, the failure mechanism and the degradation performance of SiC MOSFETs before and after the power cycling test are compared and discussed. Finally, experimental results confirm the role of threshold voltage shifting and identify different failure mechanisms.
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Cites
Fundamentals of Power Semiconductor Devices
Baliga, B. J. (2008) · Springer eBooks · doi:10.1007/978-0-387-47314-7 · Cited by 2,179 · see citing works
An Industry-Based Survey of Reliability in Power Electronic Converters
Yang, S., Bryant, A. T., Mawby, P., Xiang, D., Ran, L., & Tavner, P. J. (2011) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2011.2124436 · Cited by 2,058 · see citing works
Selected failure mechanisms of modern power modules
Ciappa, M. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00042-2 · Cited by 1,039 · see citing works
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
Smet, V., Forest, F., Huselstein, J.-J., Richardeau, F., Khatir, Z., Lefebvre, S., & Berkani, M. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2011.2114313 · Cited by 620 · see citing works
Lelis, A. J., Green, R., Habersat, D. B., & El, M. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2356172 · Cited by 477 · see citing works
A Lifetime Estimation Technique for Voltage Source Inverters
Huang, H. F., & Mawby, P. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2229472 · Cited by 396 · see citing works
Survey of High-Temperature Reliability of Power Electronics Packaging Components
Khazaka, R., Mendizabal, L., Henry, D., & Hanna, R. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2357836 · Cited by 387 · see citing works
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
Lelis, A. J., Habersat, D. B., Green, R., Ogunniyi, A. A., Gurfinkel, M., Suehle, J. S., & Goldsman, N. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.926672 · Cited by 327 · see citing works
Hazra, S., De, A., Cheng, L., Palmour, J. W., Schupbach, M., Hull, B., Allen, S., & Bhattacharya, S. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2432012 · Cited by 270 · see citing works
Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
Mantooth, H. A., Glover, M. D., & Shepherd, P. (2014) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2014.2313511 · Cited by 265 · see citing works
Power Cycling Reliability of Power Module: A Survey
Durand, C., Klingler, M., Coutellier, D., & Naceur, H. (2016) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2016.2516044 · Cited by 239 · see citing works
Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
Yu, L., Dunne, G. T., Matocha, K., Cheung, K. P., Suehle, J. S., & Sheng, K. (2010) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2010.2077295 · Cited by 228 · see citing works
Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules
Choi, U.-M., Joergensen, S., & Blaabjerg, F. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2521899 · Cited by 200 · see citing works
Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
Agarwal, A. K., Seshadri, S. R., & Rowland, L. B. (1997) · IEEE Electron Device Letters · doi:10.1109/55.644081 · Cited by 199 · see citing works
Reliability of Power Electronic Converter Systems
(2015) · Institution of Engineering and Technology eBooks · doi:10.1049/pbpo080e · Cited by 191 · see citing works
Power Cycle Testing of Power Switches: A Literature Survey
Reddy, L. G., Tolbert, L. M., & Ozpineci, B. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2359015 · Cited by 187 · see citing works
Düşmez, S., Duran, H., & Akin, B. (2016) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2016.2518127 · Cited by 167 · see citing works
Low Stress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling
Lai, W., Chen, M., Ran, L., Alatise, O. M., Xu, S., & Mawby, P. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2501540 · Cited by 134 · see citing works
Improving Power Converter Reliability: Online Monitoring of High-Power IGBT Modules
Ghimire, P., de Vega, A. R., Bęczkowski, S., Rannestad, B., Munk‐Nielsen, S., & Thøgersen, P. (2014) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2014.2311829 · Cited by 123 · see citing works
Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
Yano, H., 金藤, 夏., Osawa, A., Hatayama, T., & Fuyuki, T. (2014) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2014.2358260 · Cited by 122 · see citing works
Lai, W., Chen, M., Ran, L., Xu, S., Jiang, N., Wang, X., Alatise, O. M., & Mawby, P. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2546944 · Cited by 112 · see citing works
Choi, U., Blaabjerg, F., & Jorgensen, S. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2618917 · Cited by 112 · see citing works
Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs
Chbili, Z., Matsuda, A., Chbili, J., Ryan, J. T., Campbell, J. P., Lahbabi, M., Ioannou, D. E., & Cheung, K. P. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2586483 · Cited by 94 · see citing works
An accelerated thermal aging platform to monitor fault precursor on-state resistance
Düşmez, S., & Akin, B. (2015) · IEEE International Electric Machines & Drives Conference (IEMDC) · doi:10.1109/iemdc.2015.7409238 · Cited by 73 · see citing works
Düşmez, S., Heydarzadeh, M., Nourani, M., & Akin, B. (2017) · IEEE Transactions on Industrial Informatics · doi:10.1109/tii.2017.2665668 · Cited by 68 · see citing works
Moghadam, H. A., Dimitrijev, S., Han, J., Haasmann, D., & Aminbeidokhti, A. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2440444 · Cited by 66 · see citing works
High-Temperature Reliability of SiC Power MOSFETs
Lelis, A. J., Green, R., & Habersat, D. B. (2011) · Materials science forum · doi:10.4028/www.scientific.net/msf.679-680.599 · Cited by 54 · see citing works
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions
Ibrahim, A., Ousten, J.-P., Lallemand, R., & Khatir, Z. (2015) · Microelectronics Reliability · doi:10.1016/j.microrel.2015.11.030 · Cited by 54 · see citing works
Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors
Zhang, E. X., Zhang, C. X., Fleetwood, D. M., Schrimpf, R. D., Dhar, S., Ryu, S., Shen, X., & Pantelides, S. T. (2012) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2012.2188404 · Cited by 39 · see citing works
Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs
Baker, N., Luo, H., & Iannuzzo, F. (2017) · Energies · doi:10.3390/en10030384 · Cited by 37 · see citing works
Self-citationEffect of Threshold-Voltage Instability on SiC DMOSFET Reliability
Lelis, A. J., Green, R., Habersat, D. B., & Goldsman, N. (2008) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/irws.2008.4796090 · Cited by 25 · see citing works
Luo, H., Wang, X., Zhu, C., Li, W., & He, X. (2017) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2017.2748619 · Cited by 24 · see citing works
Self-citationPower MOSFET active power cycling for medical system reliability assessment
Sow, A., Somaya, S., Ousten, Y., Vinassa, J.-M., & Patoureaux, F. (2013) · Microelectronics Reliability · doi:10.1016/j.microrel.2013.07.096 · Cited by 16 · see citing works
Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
Green, R., Lelis, A. J., & Habersat, D. B. (2012) · Materials science forum · doi:10.4028/www.scientific.net/msf.717-720.1085 · Cited by 13 · see citing works
Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability
Lelis, A. J., Habersat, D. B., Green, R., & Goldsman, N. (2008) · IEEE International Integrated Reliability Workshop final report · doi:10.1109/irws.2008.4796136 · Cited by 13 · see citing works
Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
Lelis, A. J., Green, R., Habersat, D. B., & Goldsman, N. (2010) · Materials science forum · doi:10.4028/www.scientific.net/msf.645-648.983 · Cited by 11 · see citing works
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Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261 · see citing works
Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221 · see citing works
Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview
Pu, S., Yang, F., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3110476 · Cited by 129 · see citing works
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Yang, F., Ugur, E., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950311 · Cited by 121 · see citing works
Yang, F., Pu, S., Xu, C., & Akin, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3009202 · Cited by 117 · see citing works
Hosseinabadi, F., Chakraborty, S., Bhoi, S. K., Prochart, G., Hrvanovic, D., & Hegazy, O. (2024) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2024.3379294 · Cited by 104 · see citing works
Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93 · see citing works
Design Methodology of DC Power Cycling Test Setup for SiC MOSFETs
Yang, F., Uğur, E., & Akin, B. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2914419 · Cited by 62 · see citing works
Review of wide band-gap technology: power device, gate driver, and converter design
Ravinchandra, K., Suan, F. T. K., Lee, J.-S., Lee, K., Mantooth, H. A., Thiruchelvam, V., & Xian, J. I. Y. Y. (2022) · Journal of Power Electronics · doi:10.1007/s43236-022-00470-6 · Cited by 46 · see citing works
Du, H., Reigosa, P. D., Ceccarelli, L., & Iannuzzo, F. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2942364 · Cited by 46 · see citing works
Self-citationCheng, H., Syu, J.-Y., Wang, H.-H., Liu, Y.-C., Kao, K., & Chang, T. (2024) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2024.3364695 · Cited by 44 · see citing works
Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules
Mocevic, S., Mitrovic, V., Wang, J., Burgos, R. P., & Boroyevich, D. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3108442 · Cited by 42 · see citing works
Gonzalez, J. A. O., & Alatise, O. M. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3012298 · Cited by 42 · see citing works
Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter
Jiang, X., Wang, J., Chen, J., Yu, H., Li, Z., & John Shen, Z. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2020.2988447 · Cited by 39 · see citing works
Shi, Y., Chen, Y., Peng, C., Zhu, W., & He, H. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2023.3321744 · Cited by 37 · see citing works
Wang, M., Chen, Y., He, Z., Wu, Z., & Li, B. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3257885 · Cited by 35 · see citing works
Xin, J., Du, M., Ouyang, Z., & Wei, K. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3056634 · Cited by 35 · see citing works
Review on Power Cycling Reliability of SiC Power Device
Gao, X., Jia, Q., Wang, Y., Zhang, H., Ma, L., Zou, G., & Guo, F. (2024) · Electronic Materials · doi:10.3390/electronicmat5020007 · Cited by 30 · see citing works
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2023.3265386 · Cited by 29 · see citing works
Investigation of Off-State Stress Induced Degradation of SiC MOSFETs Under Short-Circuit Condition
Kang, J., Liu, Q., Luo, H., Cao, H., Zhang, Z., & Xin, Z. (2022) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2022.3189071 · Cited by 30 · see citing works
Self-citationYang, X., Chen, Y., Hou, B., Xu, X., Wang, J. L., Huang, Y., Chen, Q., & Zhou, C. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3044018 · Cited by 27 · see citing works
Kempiak, C., & Lindemann, A. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3039424 · Cited by 29 · see citing works
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24 · see citing works
“The kelvin-source impedance is presented for package degradation monitoring which is only applicable for 4-pin devices with the Kelvin connection [74].”
MethodInvestigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress
Wei, J., Liu, S., Lou, R., Tang, L., Ye, R., Zhang, L., Zhang, X., Sun, W., & Bai, S. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2948836 · Cited by 20 · see citing works
Discontinuous PWM for Online Condition Monitoring of SiC Power Modules
González, F., San-Sebastian, J., Arias, M., Rujas, A., & Iannuzzo, F. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2950405 · Cited by 20 · see citing works
Self-citationHoffmann, F., & Kaminski, N. (2020) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd46842.2020.9170150 · Cited by 20 · see citing works
Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs
Aviñó-Salvadó, O., Buttay, C., Bonet, F., Raynaud, C., Bevilacqua, P., Rebollo, J., Morel, H., & Perpiñà, X. (2023) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2023.3281705 · Cited by 17 · see citing works
Online Junction Temperature Estimation for SiC MOSFETs Using Drain Voltage Falling Edge Time
Wang, Y., Jiang, X., Shi, X., Liu, Q., Zhang, S., Ouyang, R., Jia, D., Ma, N., & Gong, X. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3306323 · Cited by 17 · see citing works
Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver
García, J., Saeed, S., Gurpinar, E., Castellazzi, A., & García, P. (2019) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2019.2910789 · Cited by 16 · see citing works
Xie, L., Wu, L., Deng, E., Zhang, Y., Zhao, Y., & Huang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3262404 · Cited by 15 · see citing works
Investigation of Aging’s Effect on the Conduction and Switching Loss in SiC MOSFETs
Yang, F., Uğur, E., Pu, S., Akin, B., & Das, M. K. (2019) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2019.8912284 · Cited by 15 · see citing works
Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs
Gonzalez, J. A. O., Etoz, B., & Alatise, O. M. (2020) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce44975.2020.9235650 · Cited by 15 · see citing works
In Situ Detection of Bond Wire Lift-Off Events in Operational SiC MOSFETs
Karakaya, F., Maheshwari, A., Banerjee, A., Donnal, J. S., Morgan, A. J., & Sung, W. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3446750 · Cited by 11 · see citing works
Online Detection of MOSFET Gate Oxide Degradation in a Three-Phase Inverter-Drive Application
Jensen, W. R., & Foster, S. N. (2020) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2020.3003052 · Cited by 11 · see citing works
Hoffmann, F., & Kaminski, N. (2022) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd49238.2022.9813535 · Cited by 9 · see citing works
Real-time Bond Wire Lift-off Monitoring via Module Integrated Current Sensors
Sheng, M., Alvi, M. H., & Lorenz, R. D. (2019) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2019.8912795 · Cited by 9 · see citing works
Statistical Analysis of Power Semiconductor Devices Lifetime Test and Lifetime Prediction
Zhou, X., Xin, Z., Wu, Z., & Sheng, K. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3495993 · Cited by 8 · see citing works
Wang, P., & Zhao, Z. (2025) · Electronics · doi:10.3390/electronics14112278 · Cited by 8 · see citing works
Wang, P., Chen, Y., Zhu, X., He, H., & Li, J. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3436844 · Cited by 7 · see citing works
Chen, Y., Hou, B., & Lin, Y. H. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3446241 · Cited by 7 · see citing works
An Online Monitoring Method of Bond Wire Lift-off Unevenness in Multichip SiC MOSFET Power Modules
Zhang, Z., Liang, L., & Fei, H. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3519667 · Cited by 7 · see citing works
Yang, J., Jahdi, S., Yu, R., & Stark, B. H. (2023) · IEEE Open Journal of Power Electronics · doi:10.1109/ojpel.2023.3326909 · Cited by 7 · see citing works
Zhang, Z., Liang, L., Fei, H., Han, L., & Shang, H. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3402225 · Cited by 7 · see citing works
Robustness Evaluation and Degradation Mechanisms of SiC MOSFETs Overstressed by Switched Stimuli
Kozak, J. P., Zhang, R., Yang, H., Ngo, K. D. T., & Zhang, Y. (2020) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec39645.2020.9124313 · Cited by 7 · see citing works
Package Degradation’s Impact on SiC MOSFETs Loss: A Comparison of Kelvin and Non-Kelvin Designs
Yang, F., Pu, S., Akin, B., Butler, S. W., & Wang, G. (2021) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec42165.2021.9487466 · Cited by 7 · see citing works
Comparative Analysis of Power Semiconductor Thermal Stress in DC and AC Power Cycling
Yu, X., Zhou, D., & Iannuzzo, F. (2022) · IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) · doi:10.1109/pedg54999.2022.9923148 · Cited by 7 · see citing works
Self-citationPhysics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching
Kozak, J. P., Zhang, R., Liu, J., Ngo, K. D. T., & Zhang, Y. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9128330 · Cited by 6 · see citing works
Meng, H., Liu, J., Zhang, Y., & Chung, C.-Y. (2025) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2025.3571725 · Cited by 5 · see citing works
Degradation mechanism analysis for SiC power MOSFETs under repetitive power cycling stress
Rao, Y., Chen, Y., He, Z., Chen, Y., Liu, C., Xu, X., Liu, Y., & Lu, G. (2021) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ac37dd · Cited by 5 · see citing works
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests
Chen, J., Zhou, S., & Yang, Z. (2024) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2024.3379498 · Cited by 5 · see citing works
Lan, D., Li, G., Zeng, Q. H., Yi, G., Ding, S., Qiao, L., Gao, F., & Li, S. (2026) · Chip · doi:10.1016/j.chip.2025.100188 · Cited by 4 · see citing works
Weiser, M. C. J., Tausk, J., & Kallfass, I. (2025) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2025.3562955 · Cited by 4 · see citing works
Remaining Useful Life Prediction of SiC MOSFETs Using the Autoformer-RELM Model
Luo, W., Liu, Y., Pan, Y., & Bai, L. (2025) · IEEE Transactions on Instrumentation and Measurement · doi:10.1109/tim.2025.3579735 · Cited by 4 · see citing works
Gonzalez, J. A. O., & Alatise, O. M. (2019) · European Conference on Power Electronics and Applications · doi:10.23919/epe.2019.8915508 · Cited by 4 · see citing works
Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test
Wu, Q., Kang, J., Chen, Y., Zheng, F., Zhang, J., Luo, H., Li, W., & Iannuzzo, F. (2022) · Microelectronics Reliability · doi:10.1016/j.microrel.2022.114702 · Cited by 3 · see citing works
Self-citationBond Wire Failure Monitoring of SiC MOSFETs Based on the Body Diode Voltage
Wang, X., Sun, P., & Yang, Y. (2024) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2024.3497938 · Cited by 3 · see citing works
Gonzalez, J. A. O., Alatise, O. M., & Mawby, P. (2020) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps45951.2020.9129637 · Cited by 3 · see citing works
Recycling power semiconductor devices
Sun, P., Zeng, Z., Pan, X., Ran, L., Hu, Y., Huang, S., Wang, Y., & Li, J. (2026) · Nature Reviews Electrical Engineering · doi:10.1038/s44287-025-00242-x · Cited by 2 · see citing works
Trade-offs Between Gate Oxide Protection and Performance in SiC MOSFETs
Gonzalez, J. A. O., Wu, R., & Alatise, O. M. (2020) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce44975.2020.9235843 · Cited by 2 · see citing works
A simple sensor device for power cycle degradation sensing
Tsukamoto, T., Nishizawa, S., & Saito, W. (2023) · Microelectronics Reliability · doi:10.1016/j.microrel.2023.115068 · Cited by 2 · see citing works
Li, J., Shen, S., Wu, Q., Qiu, S., Wang, Q., Su, W., & Yu, P. (2025) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2025.3627219 · Cited by 1 · see citing works
Evolution of Electrical and Thermal Ageing Parameters in SiC MOSFETs Under Power Cycling
Mustafa, U., Watson, A., Wheeler, P. W., & Ahmed, M. R. (2026) · IET Power Electronics · doi:10.1049/pel2.70274 · Cited by 1 · see citing works
Analysis of Power Cycle Aging Test for SiC MOSFET
Zheng, Z., Meng, L., Li, X., Ruan, B., & Cui, H. (2023) · Global Reliability and Prognostics and Health Management Conference (PHM) · doi:10.1109/phm-hangzhou58797.2023.10482448 · Cited by 1 · see citing works
Barón, K. M., Sharma, K., Nitzsche, M., & Kallfass, I. (2021) · IEEE Design Methodologies Conference (DMC) · doi:10.1109/dmc51747.2021.9529946 · Cited by 1 · see citing works
Reliability and Condition Monitoring of Sic Power MOSFETsPreprint
Farhadi, M. (2024) · SSRN Electronic Journal · doi:10.2139/ssrn.4832844 · Cited by 1 · see citing works
Hernandez-Barrios, Y., Schleich, C., Stampfer, B., Grasser, T., & Waltl, M. (2023) · Materials science forum · doi:10.4028/p-7c79an
A Modulation Scheme for Dynamic AC Power Cycling Based on the Opposition Method
Fink, T., Barón, K. M., Nuzzo, J., Schnitzler, R., Koch, D., & Kallfass, I. (2024) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce55643.2024.10861085
Zhao, D., & Yang, X. (2025) · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipda-asia63772.2025.11184007
Ando, T., Kato, F., Senzaki, J., & Sato, H. (2025) · Transactions of The Japan Institute of Electronics Packaging · doi:10.5104/jiepeng.18.e25-001-1
Comparative Study on Fatigue Lifetime of SiC MOSFETs Under Power Cycling Tests
Jing, D., Ji, X., Ge, X., Wang, H., Xie, D., & Xu, Z. (2025) · Energy Conversion Congress and Expo Europe (ECCE Europe) · doi:10.1109/ecce-europe62795.2025.11238477
Singh, B. P., Ghahfarokhi, S. S., Ayaz, E., Nee, H., & Norrga, S. (2025) · Energy Conversion Congress and Expo Europe (ECCE Europe) · doi:10.1109/ecce-europe62795.2025.11238801
Singh, B. P., Nee, H., & Norrga, S. (2025) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce58356.2025.11260319
Zhu, X., Chen, Y., Wang, P., & He, H. (2026) · Microelectronics Reliability · doi:10.1016/j.microrel.2026.116012
Online Detection of SiC MOSFET Gate Oxide Degradation by Drain‐Source Voltage Surge in Inverter
Wang, T., Wang, D., Li, Q., Liu, B., Zhao, J., & Wang, J. (2026) · IET Power Electronics · doi:10.1049/pel2.70211
Influence of Varying Degrees of Power Cycling Aging on Short-Circuit Ruggedness in 1.2-kV SiC MOSFET
Wang, P., Chen, Y., Long, Y., He, H., & Li, J. (2026) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2026.3673394
A High Accuracy Lifetime Estimation Method for SiC MOSFETs Based on CNN-LSTM Networks
Ding, X., Wang, B., Yang, Y., Zhao, M., Yang, K., & Peng, L. (2026) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2026.3673635
Response Analysis of the Darlington Transistor Amplification Mode under Transient Electrical Stress
Li, C., Cheng, J., Chu, X., Zhu, H., Wen, B., & Xu, F. (2026) · International Conference on Generative Artificial Intelligence and Information Security (GAIIS) · doi:10.1109/gaiis69281.2026.11519246
Electrical Degradation and Trapped Charge Evolution in SiC MOSFETs Under Power-Cycling Stress
Pan, S., Gu, S., Feng, S., Zhang, B., Li, X., Lu, X., Li, H., Wu, M., & Zhang, Y. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3696424
Du, M., Zhang, Z. H., & Wang, G. (2026) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2026.3712722
Long-term reliability analysis of bipolar stress in SiC power MOSFETs
Hernandez-Barrios, Y. (2026) · Revista Mexicana de Física · doi:10.31349/revmexfis.72.051602
Co-optimization of Switching Loss and Dynamic Reliability for SiC MOSFETsPreprint
Zheng, B., Que, P., Zheng, C., Xu, Y., & Zheng, K. (2026) · SSRN Electronic Journal · doi:10.2139/ssrn.7478479
A Review of Condition Monitoring and Lifetime Prediction for Power Semiconductor Devices
Molenaar, M., Shekhar, A., & Bauer, P. (2026) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/pemc69244.2026.11726138
- Authors
- Luo, H., Iannuzzo, F., & Turnaturi, M.
- Affiliations
- Zhejiang University (CN)
- Aalborg University (DK)
- Venue
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Published
- 2020-06
- Volume
- 8
- Issue
- 2
- Pages
- 1657-1667
- ISSN
- 2168-6777 (ISSN-L)
- 2168-6785
- OpenAlex
- W2914811080
- Cited by
- 82
- References
- 36
- Citations by year
- 2026: 13 · 2025: 10 · 2024: 13 · 2023: 11 · 2022: 5 · 2021: 7 · 2020: 12 · 2019: 11
- FWCI
- 3.15
- Type
- journal article
- Language
- en
- Open access
- green
- vbn.aau.dk
- Licence
- Locations
- IEEE Journal of Emerging and Selected Topics in Power Electronics (publishedVersion)
- VBN Forskningsportal (Aalborg Universitet) (publishedVersion, other-oa)
- Funders
- Vishay Semiconductor Italiana S.p.A
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- SiC MOSFET, threshold voltage shift, threshold voltage instability, power cycling reliability, test protocol, failure mechanisms, high-temperature operation
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