Ryu, Sei-Hyung

Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications

Madhusoodhanan, S., Hatua, K., Bhattacharya, S., Leslie, S., Ryu, S.-H., Das, M., Agarwal, A., & Grider, D. (2012) · 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

Silicon Carbide Semiconductor TechnologiesMultilevel Inverters and Converters

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Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

Rumyantsev, S. L., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Agarwal, A. K., Hull, B. A., & Ryu, S.-H. (2009) · Semiconductor Science and Technology

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

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Channel Hot-Carrier Effect of 4H-SiC MOSFET

Yu, L. C., Cheung, K. P., Suehle, J. S., Campbell, J. P., Sheng, K., Lelis, A. J., & Ryu, S. H. (2009) · Materials Science Forum

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

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