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Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications
Abstract
Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.
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Silicon IGBTs available in the market have limited operating voltage up to 6.5 kV, requiring many cascaded converters in MV applications.
“In the early stage of development, it required a large number of converters to be cascaded in MV application due to the limitation of the silicon IGBT available in the market that has limited operating voltage up to 6.5 kV [40].”
From State of the Art of Solid-State Transformers: Advanced Topologies, Implementation Issues, Recent Progress and Improvements (2020) · cites this paper as [40]
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Research works printed but not linked: 11
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- agarwal, 2004, Silicon Carbide Recent Major Advances, 785, 10.1007/978-3-642-18870-1_33 · DOI
- 10.1109/ECCE.2011.6064129 · DOI
- 10.1109/ECCE.2009.5315963 · DOI
Cited by
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Hannan, M. A., Ker, P. J., Lipu, M. S. H., Choi, Z. H., Rahman, M. S. A., Muttaqi, K. M., & Blaabjerg, F. (2020) · IEEE Access · doi:10.1109/access.2020.2967345 · Cited by 339
“Hereafter comes with the SiC devices which are more efficient than Si devices [40], [42], [43].”
Background1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time
Xing, D., Hu, B., Kang, M., Zhang, Y., Nayak, S., Wang, J., & Agarwal, A. K. (2022) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3144995 · Cited by 33
Self-citationMadhusoodhanan, S., Mainali, K., Tripathi, A., Patel, D., Kadavelugu, A., Bhattacharya, S., & Hatua, K. (2015) · 2015 IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2015.7310184 · Cited by 13
Self-citation
Metadata
- Authors
- Madhusoodhanan, S., Hatua, K., Bhattacharya, S., Leslie, S., Ryu, S.-H., Das, M., Agarwal, A., & Grider, D.
- Affiliations
- North Carolina State University (US)
- Wolfspeed, Inc. (United States) (US)
- Venue
- 2012 IEEE Energy Conversion Congress and Exposition (ECCE)
- Publisher
- IEEE
- Published
- 2012-09
- Pages
- 310-317
- OpenAlex
- W2124584469
- Cited by
- 80
- References
- 0
- Citations by year
- 2026: 1 · 2024: 4 · 2023: 3 · 2022: 5 · 2021: 6 · 2020: 5 · 2019: 4 · 2018: 4 · 2017: 9 · 2016: 13 · 2015: 9 · 2014: 8 · 2013: 8 · 2012: 1
- FWCI
- 10.62
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE Energy Conversion Congress and Exposition (ECCE) (publishedVersion)
- Funders
- Advanced Research Projects Agency - Energy
- Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › HVDC Systems and Fault Protection
- Keywords
- SiC MOSFET, silicon IGBT, three-level neutral point clamped converter, voltage source converter, medium-voltage power electronics, solid-state transformer, STATCOM, grid interface, device comparison
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