Eryilmaz, Sukru Burc

A compute-in-memory chip based on resistive random-access memory

Wan, W., Kubendran, R., Schaefer, C., Eryilmaz, S. B., Zhang, W., Wu, D., Deiss, S., Raina, P., Qian, H., Gao, B., et al. (2022) · Nature

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 943

Face classification using electronic synapses

Yao, P., Wu, H., Gao, B., Eryilmaz, S. B., Huang, X., Zhang, W., Zhang, Q., Deng, N., Shi, L., Wong, H.-S. P., et al. (2017) · Nature Communications

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 909

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

Eryilmaz, S. B., Kuzum, D., Jeyasingh, R., Kim, S., BrightSky, M., Lam, C., & Wong, H.-S. P. (2014) · Frontiers in Neuroscience

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 205

Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition

Li, H., Wu, T. F., Rahimi, A., Li, K.-S., Rusch, M., Lin, C.-H., Hsu, J.-L., Sabry, M. M., Eryilmaz, S. B., Sohn, J., et al. (2016) · 2016 IEEE International Electron Devices Meeting (IEDM)

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 136

Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing

Li, H., Li, K.-S., Lin, C.-H., Hsu, J.-L., Chiu, W.-C., Chen, M.-C., Wu, T.-T., Sohn, J., Eryilmaz, S. B., Shieh, J.-M., et al. (2016) · 2016 IEEE Symposium on VLSI Technology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 75

Experimental demonstration of array-level learning with phase change synaptic devices

Eryilmaz, S. B., Kuzum, D., Jeyasingh, R. G. D., Kim, S., BrightSky, M., Lam, C., & Wong, H.-S. P. (2013) · 2013 IEEE International Electron Devices Meeting

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 51

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses

Eryilmaz, S. B., Neftci, E., Joshi, S., Kim, S., BrightSky, M., Lung, H.-L., Lam, C., Cauwenberghs, G., & Wong, H.-S. P. (2016) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 34