Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array
Open accessAbstract
Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Memristive crossbars can be fabricated with very small areal footprint.
“Memristive crossbars can also be fabricated with very small areal footprint27,29,60.”
From Neuromorphic computing with multi-memristive synapses (2018) · cites this paper as [60]
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Cites
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174 · cited 3× · see citing works
“…et al., 2012), resistive switching memory (RRAM) (Xia et al., 2009; Chang et al., 2011; Seo et al., 2011; Yu et al., 2011, 2013; Yang et al., 2012) and conductive bridge memory (CBRAM) (Jo et al., 2010; Ohno et al., 2011), have been proposed for implementing the synaptic element in a compact space.”
BackgroundMethodInfluentialNeuromorphic electronic systems
Mead, C. (1990) · Proceedings of the IEEE · doi:10.1109/5.58356 · Cited by 2,368 · see citing works
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Ohno, T., Hasegawa, T., Tsuruoka, T., Terabe, K., Gimzewski, J. K., & Aono, M. (2011) · Nature Materials · doi:10.1038/nmat3054 · Cited by 1,793 · see citing works
Building high-level features using large scale unsupervised learning
Le, Q. V. (2013) · 2013 IEEE International Conference on Acoustics, Speech and Signal Processing · doi:10.1109/icassp.2013.6639343 · Cited by 1,695 · see citing works
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
Kuzum, D., Jeyasingh, R. G. D., Lee, B., & Wong, H.-S. P. (2012) · Nano Letters · doi:10.1021/nl201040y · Cited by 1,267 · cited 4× · see citing works
“The main characteristic of PCM that makes it a good candidate as a synaptic device is its capability for being programmed to intermediate resistance states between high and low resistance values, or gradual programming (Kuzum et al., 2011).”
BackgroundMethodInfluentialSelf-citationShort-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Chang, T., Jo, S.-H., & Lu, W. (2011) · ACS Nano · doi:10.1021/nn202983n · Cited by 1,062 · see citing works
Experimental demonstration of associative memory with memristive neural networks
Pershin, Y. V., & Di Ventra, M. (2010) · Neural Networks · doi:10.1016/j.neunet.2010.05.001 · Cited by 1,041 · see citing works
Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
Xia, Q., Robinett, W., Cumbie, M. W., Banerjee, N., Cardinali, T. J., Yang, J. J., Wu, W., Li, X., Tong, W. M., Strukov, D. B., et al. (2009) · Nano Letters · doi:10.1021/nl901874j · Cited by 671 · see citing works
Pattern classification by memristive crossbar circuits using ex situ and in situ training
Alibart, F., Zamanidoost, E., & Strukov, D. B. (2013) · Nature Communications · doi:10.1038/ncomms3072 · Cited by 642 · see citing works
Flagged first, then by citations
Research works printed but not linked: 33
- Bi G.-Q. Poo M.-M. (1998). Synaptic modifications in cultured hippocampal neurons: dependence on spike timing, synaptic strength, and postsynaptic cell type. J. Neurosci. 18, 10464– 10472 9852584 PMC6793365
- Bichler O. Suri M. Querlioz D. Vuillaume D. DeSalvo B. Gamrat C. (2012). Visual pattern extraction using energy-efficient “2-PCM synapse” neuromorphic architecture. IEEE Trans. Electron Device 59, 2206– 2214 10.1109/TED.2012.2197951 · DOI
- Borwein J. M. Borwein P. B. (1987). Pi and the AGM: a Study in Analytic Number Theory and Computational Complexity. New York, NY: John Wiley & Sons, Inc
- Braga S. Cabrini A. Torelli G. (2011). Experimental analysis of partial-SET state stability in phase-change memories. IEEE Trans. Electron Device 58, 517– 522 10.1109/TED.2010.2090157 · DOI
- Close G. F. Frey U. Breitwisch M. Lung H. L. Lam C. Hagleitner C. (2010). Device, circuit and system-level analysis of noise in multi-bit phase change memory, in IEEE International Electron Devices Meeting (San Francisco, CA), 29.5.1– 29.5.4
- Drachman D. (2005). Do we have brain to spare? Neurology 64, 2004– 2005 10.1212/01.WNL.0000166914.38327.BB 15985565 · DOI
- Eryilmaz S. B. Kuzum D. Jeyasingh R. G. D. Kim S. BrightSky M. Lam C. (2013). Experimental demonstration of array-level learning with phase change synaptic devices, in IEEE International Electron Devices Meeting (Washington, DC), 25.5.1– 25.5.4
- Frank D. J. Dennard R. H. Nowak E. Solomon P. M. Taur Y. Wong H.-S. (2001). Device scaling limits of Si MOSFETs and their application dependencies. Proc. IEEE 89, 259– 288 10.1109/5.915374 · DOI
- Hennessy J. L. Patterson D. A. Asanoviæ K. (2012). Computer Architecture: a Quantitative Approach, 5th Edn. Amsterdam: Morgan Kaufmann/Elsevier
- Hertz J. Krogh A. Palmer R. G. (1991). Introduction to the Theory of Neural Computation. Redwood City, CA: Addison-Wesley Publishing Company
- Indiveri G. Chicca E. Douglas R. (2006). A VLSI array of low-power spiking neurons and bistable synapses with spike-timing dependent plasticity. IEEE Trans. Neural Netw. 17, 211– 221 10.1109/TNN.2005.860850 16526488 · DOI · Paper page
- Kaneko Y. Nishitami Y. Ueda M. Tsujimura A. (2013). Neural network based on a three-terminal ferroelectric memristor to enable on-chip pattern recognition, in Symposium on VLSI Technology (Kyoto), 238– 239
- Kang D.-H. Lee J.-H. Kong J. H. Ha D. Yu J. Um C. Y. (2008). Two-bit cell operation in diode-switch phase change memory cells with 90 nm technology, in Symposium on VLSI Technology (Honolulu, HI), 98– 99
- Kang M. J. Park T. J. Kwon Y. W. Ahn D. H. Kang Y. S. Jeong H. (2011). PRAM cell technology and characterization in 20nm node size, in IEEE International Electron Devices Meeting (Washington, DC), 39– 42
- Karpov I. V. Mitra M. Kau D. Spadini G. Kryukov Y. A. Karpov V. G. (2007). Fundamental drift of parameters in chalcogenide phase change memory. J. Appl. Phys. 102, 124503– 124506 10.1063/1.2825650 · DOI
- Kinoshita M. Sasago Y. Minemura H. Anzai Y. Tai M. Fujisaki Y. (2012). Scalable 3-D vertical chain-cell-type phase change memory with 4f2 poly-Si diodes, in Symposium on VLSI Technology (Honolulu, HI), 35– 36
- Kuzum D. Jeyasingh R. G. D. Yu S. Wong H.-S. P. (2012). Low-energy robust neuromorphic computation using synaptic devices. IEEE Trans. Electron Device 59, 3489– 3494 10.1109/TED.2012.2217146 · DOI
- Kuzum D. Yu S. Wong H.-S. P. (2013). Synaptic electronics: materials, devices and applications. Nanotechnology 24: 382001 10.1088/0957-4484/24/38/382001 23999572 · DOI
- Liang J. Jeyasingh R. G. D. Chen H.-Y. Wong H.-S. P. (2012). An ultra-low reset current cross-point phase change memory with carbon nanotube electrodes. IEEE Trans. Electron Device 59, 1155– 1163 10.1109/TED.2012.2184542 · DOI
- Mantegazza D. Ielmini D. Pirovano A. Lacaita A. L. (2010). Incomplete filament crystallization during SET operation in PCM cells. IEEE Electron Device Lett. 31, 341– 343 10.1109/LED.2010.2042273 · DOI
- Merolla P. Arthur J. Akopyan F. Imam N. Manohar R. Modha D. S. (2011). A digital neurosynaptic core using embedded crossbar memory with 45pJ per spike in 45 nm, in IEEE Custom Integrated Circuits Conference (San Jose, CA).
- Pershin Y. V. Di Ventra M. (2011). Solving mazes with memristors: a massively parallel approach. Phys. Rev. E 84, 046703 10.1103/PhysRevE.84.046703 22181303 · DOI
- Poon C.-S. Zhou K. (2011). Neuromorphic silicon neurons and large-scale neural networks: challenges and opportunities. Front. Neurosci. 5: 108 10.3389/fnins.2011.00108 21991244 PMC3181466 · DOI
- Preissl R. Wong T. M. Datta P. Flickner M. Singh R. Esser S. K. (2012). Compass: a scalable simulator for an architecture for cognitive computing, in ACM/IEEE Conference High Performance Networking Computing, EEE, Storage and Analysis (Salt Lake City, UT).
- Radack D. J. Zolper J. C. (2008). A future of integrated electronics: moving off the roadmap. Proc. IEEE 96, 198– 200 10.1109/JPROC.2007.911049 · DOI
- Seo K. Kim I. Jung S. Jo M. Park S. Park J. (2011). Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device. Nanotechnology 22: 254023 10.1088/0957-4484/22/25/254023 21572200 · DOI
- Servalli G. (2009). A 45nm generation phase change memory technology, in IEEE International Electron Devices Meeting (Baltimore, MD), 1– 4
- Suri M. Bichler O. Querlioz D. Traore B. Cueto O. Perniola L. (2012). Physical aspects of low power synapses based on phase change memory devices. J. Appl. Phys. 112, 054904 10.1063/1.4749411 · DOI
- Wedeen V. J. Rosene D. L. Wang R. Dai G. Mortazavi F. Hagmann P. (2012). The geometric structure of the brain fiber pathways. Science 335, 1628– 1634 10.1126/science.1215280 22461612 PMC3773464 · DOI · Paper page
- Wong H.-S. P. Raoux S. Kim S. Liang J. Reifenberg J. P. Rajendran B. (2010). Phase change memory. Proc. IEEE 98, 2201– 2227 10.1109/JPROC.2010.207005017501353 · DOI
- Yang R. Terabe K. Liu G. Tsuruoka T. Hasegawa T. Gimzewski J. K. (2012). On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration. ACS Nano 6, 9515– 9521 10.1021/nn302510e 23102535 · DOI
- Yu S. Gao B. Fang Z. Yu H. Kang J. Wong H.-S. P. (2013). Stochastic learning in oxide binary synaptic device for neuromorphic computing. Front. Neurosci. 7: 186 10.3389/fnins.2013.00186 24198752 PMC3813892 · DOI
- Yu S. Wu Y. Jeyasingh R. G. D. Kuzum D. Wong H.-S. P. (2011). An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation. IEEE Trans. Electron Devices 58, 2729– 2737 10.1109/TED.2011.2147791 · DOI · Paper page
Cited by
Sorted by citations
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., & Strukov, D. B. (2015) · Nature · doi:10.1038/nature14441 · Cited by 3,001 · see citing works
Memory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289 · see citing works
Fully memristive neural networks for pattern classification with unsupervised learning
Wang, Z., Joshi, S., Savel’ev, S., Song, W., Midya, R., Li, Y., Rao, M., Yan, P., Asapu, S., Zhuo, Y., et al. (2018) · Nature Electronics · doi:10.1038/s41928-018-0023-2 · Cited by 1,106 · see citing works
Neuromorphic computing with multi-memristive synapses
Boybat, I., Le Gallo, M., Nandakumar, S. R., Moraitis, T., Parnell, T., Tuma, T., Rajendran, B., Leblebici, Y., Sebastian, A., & Eleftheriou, E. (2018) · Nature Communications · doi:10.1038/s41467-018-04933-y · Cited by 903 · see citing works
Bayat, F. M., Prezioso, M., Chakrabarti, B., Nili, H., Kataeva, I., & Strukov, D. (2018) · Nature Communications · doi:10.1038/s41467-018-04482-4 · Cited by 377 · see citing works
In situ training of feed-forward and recurrent convolutional memristor networks
Wang, Z., Li, C., Lin, P., Rao, M., Nie, Y., Song, W., Qiu, Q., Li, Y., Yan, P., Strachan, J. P., et al. (2019) · Nature Machine Intelligence · doi:10.1038/s42256-019-0089-1 · Cited by 307 · see citing works
4K-memristor analog-grade passive crossbar circuit
Kim, H., Mahmoodi, M. R., Nili, H., & Strukov, D. B. (2021) · Nature Communications · doi:10.1038/s41467-021-25455-0 · Cited by 265 · see citing works
Amirsoleimani, A., Alibart, F., Yon, V., Xu, J., Pazhouhandeh, M. R., Ecoffey, S., Beilliard, Y., Genov, R., & Drouin, D. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000115 · Cited by 216 · see citing works
Memristive Crossbar Arrays for Storage and Computing Applications
Li, H., Wang, S., Zhang, X., Wang, W., Yang, R., Sun, Z., Feng, W., Lin, P., Wang, Z., Sun, L., et al. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202100017 · Cited by 205 · see citing works
Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses
Eryilmaz, S. B., Neftci, E., Joshi, S., Kim, S., BrightSky, M., Lung, H.-L., Lam, C., Cauwenberghs, G., & Wong, H.-S. P. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2616483 · Cited by 34 · see citing works
Self-citation
- Authors
- Eryilmaz, S. B., Kuzum, D., Jeyasingh, R., Kim, S., BrightSky, M., Lam, C., & Wong, H.-S. P.
- Affiliations
- Stanford University (US)
- University of Pennsylvania (US)
- IBM Research - Thomas J. Watson Research Center (US)
- Corresponding author
- Eryilmaz, Sukru B.
- Venue
- Frontiers in Neuroscience
- Publisher
- Frontiers Media SA
- Published
- 2014-07-22
- Volume
- 8
- Pages
- 205-205
- ISSN
- 1662-453X (ISSN-L)
- PMC
- PMC4106403
- OpenAlex
- W2032959979
- Cited by
- 205
- References
- 9
- Citations by year
- 2026: 4 · 2025: 7 · 2024: 8 · 2023: 18 · 2022: 18 · 2021: 23 · 2020: 33 · 2019: 23 · 2018: 26 · 2017: 17 · 2016: 11 · 2015: 15 · 2014: 2
- FWCI
- 7.97
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- cc-by
- Locations
- Frontiers in Neuroscience (publishedVersion, cc-by)
- Europe PMC (PubMed Central) (publishedVersion, cc-by)
- PubMed Central (publishedVersion, cc-by)
- PubMed (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- eScholarship (California Digital Library) (submittedVersion, cc-by)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- eScholarship (California Digital Library) (submittedVersion)
- arXiv (Cornell University)
- Funders
- National Science Foundation (1317470)
- Semiconductor Research Corporation
- Microelectronics Advanced Research Corporation
- Defense Advanced Research Projects Agency
- Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Physical Sciences › Computer Science › Artificial Intelligence › Neural Networks and Reservoir Computing
- Keywords
- associative memory, phase-change memory, artificial synapses, neuromorphic computing, Hebbian learning, energy consumption, nanoscale memory
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review