Lu, Wei

Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor

Jeong, Y., Kim, S., & Lu, W. D. (2015) · Applied Physics Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 101

Device and SPICE modeling of RRAM devices

Sheridan, P., Kim, K.-H., Gaba, S., Chang, T., Chen, L., & Lu, W. (2011) · Nanoscale

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 98

An 8-bit 20.7 TOPS/W Multi-Level Cell ReRAM-based Compute Engine

Correll, J. M., Jie, L., Song, S., Lee, S., Zhu, J., Tang, W., Wormald, L., Erhardt, J., Breil, N., Quon, R., et al. (2022) · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 51

A Fully Integrated Reprogrammable CMOS-RRAM Compute-in-Memory Coprocessor for Neuromorphic Applications

Correll, J. M., Bothra, V., Cai, F., Lim, Y., Lee, S. H., Lee, S., Lu, W. D., Zhang, Z., & Flynn, M. P. (2020) · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Advanced Memory and Neural ComputingAnalog and Mixed-Signal Circuit Design

Cited by 36

Demonstration of a Multi-Level μA-Range Bulk Switching ReRAM and its Application for Keyword Spotting

Wu, Y., Cai, F., Thomas, L., Liu, T., Nourbakhsh, A., Hebding, J., Smith, E., Quon, R., Smith, R., Kumar, A., et al. (2022) · 2022 International Electron Devices Meeting (IEDM)

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 8

Improvement of RRAM Device Performance Through On-Chip Resistors

Gaba, S., Choi, S., Sheridan, P., Chang, T., Yang, Y., & Lu, W. (2012) · MRS Proceedings

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 2