Lu, Wei
University of Michigan
30 papers on CoChatORCID 0000-0003-4731-1976
Most cited papers
- Verified
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 4,174
- Verified
The future of electronics based on memristive systems
Zidan, M. A., Strachan, J. P., & Lu, W. D. (2018) · Nature Electronics
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 2,138
- Verified
Observation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 1,208
- Verified
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Chang, T., Jo, S.-H., & Lu, W. (2011) · ACS Nano
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 1,058
- Verified
A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications
Kim, K.-H., Gaba, S., Wheeler, D., Cruz-Albrecht, J. M., Hussain, T., Srinivasa, N., & Lu, W. (2012) · Nano Letters
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 924
- Verified
A fully integrated reprogrammable memristor–CMOS system for efficient multiply–accumulate operations
Cai, F., Correll, J. M., Lee, S. H., Lim, Y., Bothra, V., Zhang, Z., Flynn, M. P., & Lu, W. D. (2019) · Nature Electronics
Advanced Memory and Neural ComputingAnalog and Mixed-Signal Circuit Design
Cited by 728
- Verified
Temporal data classification and forecasting using a memristor-based reservoir computing system
Moon, J., Ma, W., Shin, J. H., Cai, F., Du, C., Lee, S. H., & Lu, W. D. (2019) · Nature Electronics
Neural Networks and Reservoir ComputingAdvanced Memory and Neural Computing
Cited by 645
- Verified
Sparse coding with memristor networks
Sheridan, P. M., Cai, F., Du, C., Ma, W., Zhang, Z., & Lu, W. D. (2017) · Nature Nanotechnology
Advanced Memory and Neural ComputingSparse and Compressive Sensing Techniques
Cited by 619
- Verified
Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity
Kim, S., Du, C., Sheridan, P., Ma, W., Choi, S., & Lu, W. D. (2015) · Nano Letters
Advanced Memory and Neural ComputingNeural dynamics and brain function
Cited by 603
- Verified
High-Density Crossbar Arrays Based on a Si Memristive System
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 574
- Verified
Hardware implementation of memristor-based artificial neural networks
Aguirre, F., Sebastian, A., Le Gallo, M., Song, W., Wang, T., Yang, J. J., Lu, W., Chang, M.-F., Ielmini, D., Yang, Y., et al. (2024) · Nature Communications
Advanced Memory and Neural ComputingNeural Networks and Applications
Cited by 564
- Verified
Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics
Du, C., Ma, W., Chang, T., Sheridan, P., & Lu, W. D. (2015) · Advanced Functional Materials
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 444
- Verified
Synaptic behaviors and modeling of a metal oxide memristive device
Chang, T., Jo, S.-H., Kim, K.-H., Sheridan, P., Gaba, S., & Lu, W. (2011) · Applied Physics A
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 432
- Verified
CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
Jo, S. H., & Lu, W. (2008) · Nano Letters
Advanced Memory and Neural ComputingPhase-change materials and chalcogenides
Cited by 406
- Verified
Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
Zhou, J., Kim, K.-H., & Lu, W. (2014) · IEEE Transactions on Electron Devices
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 310
- Verified
Stochastic memristive devices for computing and neuromorphic applications
Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W. (2013) · Nanoscale
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 307
- Verified
Programmable Resistance Switching in Nanoscale Two-Terminal Devices
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 302
- Verified
Integrating Machine Learning with Human Knowledge
Deng, C., Ji, X., Rainey, C., Zhang, J., & Lu, W. (2020) · iScience
Machine Learning and AlgorithmsAI-based Problem Solving and Planning
Cited by 243
- Verified
Crossbar RRAM Arrays: Selector Device Requirements During Write Operation
Kim, S., Zhou, J., & Lu, W. D. (2014) · IEEE Transactions on Electron Devices
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 219
- Verified
Nanoscale resistive memory with intrinsic diode characteristics and long endurance
Kim, K.-H., Hyun Jo, S., Gaba, S., & Lu, W. (2010) · Applied Physics Letters
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 187
- Verified
3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector
Jo, S. H., Kumar, T., Narayanan, S., Lu, W. D., & Nazarian, H. (2014) · 2014 IEEE International Electron Devices Meeting
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 162
- Verified
Data Clustering using Memristor Networks
Choi, S., Sheridan, P., & Lu, W. D. (2015) · Scientific Reports
Advanced Memory and Neural ComputingNeural Networks and Applications
Cited by 132
- Verified
Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
Kim, S., Choi, S., Lee, J., & Lu, W. D. (2014) · ACS Nano
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices
Cited by 129
- Verified
Electrochemical metallization cells—blending nanoionics into nanoelectronics?
Lu, W., Jeong, D. S., Kozicki, M., & Waser, R. (2012) · MRS Bulletin
Advanced Memory and Neural ComputingElectrodeposition and Electroless Coatings
Cited by 113
Go further with a free account
Verify every reference, keep papers in a library, and ask questions across them.
Sign up - it is free