Kozicki, Michael N.

Electrochemical metallization memories—fundamentals, applications, prospects

Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 921

Nanoscale Memory Elements Based on Solid-State Electrolytes

Kozicki, M. N., Park, M., & Mitkova, M. (2005) · IEEE Transactions On Nanotechnology

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 540

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

Russo, U., Kamalanathan, D., Ielmini, D., Lacaita, A. L., & Kozicki, M. N. (2009) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 319

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

Lu, W., Jeong, D. S., Kozicki, M., & Waser, R. (2012) · MRS Bulletin

Advanced Memory and Neural ComputingElectrodeposition and Electroless Coatings

Cited by 113

A CMOS-compatible electronic synapse device based on Cu/SiO 2 /W programmable metallization cells

Chen, W., Fang, R., Balaban, M. B., Yu, W., Gonzalez-Velo, Y., Barnaby, H. J., & Kozicki, M. N. (2016) · Nanotechnology

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 76

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

Fang, R., Gonzalez Velo, Y., Chen, W., Holbert, K. E., Kozicki, M. N., Barnaby, H., & Yu, S. (2014) · Applied Physics Letters

Advanced Memory and Neural ComputingRadiation Effects in Electronics

Cited by 74

Inherent diode isolation in programmable metallization cell resistive memory elements

Puthentheradam, S. C., Schroder, D. K., & Kozicki, M. N. (2011) · Applied Physics A

Advanced Memory and Neural ComputingPhase-change materials and chalcogenides

Cited by 40