Chih, Yu-Der

16.4 An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications

Chih, Y.-D., Lee, P.-H., Fujiwara, H., Shih, Y.-C., Lee, C.-F., Naous, R., Chen, Y.-L., Lo, C.-P., Lu, C.-H., Mori, H., et al. (2021) · 2021 IEEE International Solid- State Circuits Conference (ISSCC)

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 384

16.1 A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

Xue, C.-X., Hung, J.-M., Kao, H.-Y., Huang, Y.-H., Huang, S.-P., Chang, F.-C., Chen, P., Liu, T.-W., Jhang, C.-J., Su, C.-I., et al. (2021) · 2021 IEEE International Solid- State Circuits Conference (ISSCC)

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 182

A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

Xue, C.-X., Chiu, Y.-C., Liu, T.-W., Huang, T.-Y., Liu, J.-S., Chang, T.-W., Kao, H.-Y., Wang, J.-H., Wei, S.-Y., Lee, C.-Y., et al. (2020) · Nature Electronics

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 181

Fusion of memristor and digital compute-in-memory processing for energy-efficient edge computing

Wen, T.-H., Hung, J.-M., Huang, W.-H., Jhang, C.-J., Lo, Y.-C., Hsu, H.-H., Ke, Z.-E., Chen, Y.-C., Chin, Y.-H., Su, C.-I., et al. (2024) · Science

Advanced Memory and Neural ComputingParallel Computing and Optimization Techniques

Cited by 131

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices

Hung, J.-M., Huang, Y.-H., Huang, S.-P., Chang, F.-C., Wen, T.-H., Su, C.-I., Khwa, W.-S., Lo, C.-C., Liu, R.-S., Hsieh, C.-C., et al. (2022) · 2022 IEEE International Solid- State Circuits Conference (ISSCC)

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 125

29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification

Yoon, J.-H., Chang, M., Khwa, W.-S., Chih, Y.-D., Chang, M.-F., & Raychowdhury, A. (2021) · 2021 IEEE International Solid- State Circuits Conference (ISSCC)

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 86

A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM

Yang, K., Dong, Q., Wang, Z., Shih, Y.-C., Chih, Y.-D., Chang, J., Blaauw, D., & Svlvester, D. (2018) · 2018 IEEE Symposium on VLSI Circuits

Physical Unclonable Functions (PUFs) and Hardware SecurityMagnetic properties of thin films

Cited by 57