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Cited by 487

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Dissolvable Metals for Transient Electronics

Yin, Lan, Cheng, Huanyu, Mao, Shimin, Haasch, Richard, Liu, Yuhao, Xie, Xu, Hwang, Suk‐Won, Jain, Harshvardhan, Kang, Seung‐Kyun, Su, Yewang, Li, Rui, Huang, Yonggang, Rogers, John A.·2014·Advanced Functional Materials

Abstract

Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de‐ionized (DI) water and simulated body fluids (Hanks’ solution pH 5–8) are systematically studied, to assess the potential for use of these metals in water‐soluble, that is, physically "transient", electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics.

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Metadata

Authors
Yin, L., Cheng, H., Mao, S., Haasch, R., Liu, Y., Xie, X., Hwang, S., Jain, H., Kang, S., Su, Y., Li, R., Huang, Y., & Rogers, J. A.
Venue
Advanced Functional Materials
Publisher
Wiley
Published
2013-09-25
Volume
24
Issue
5
Pages
645-658
ISSN
  • 1616-301X (ISSN-L)
  • 1616-3028
OpenAlex
W2070677299
Cited by
487
References
1
FWCI
6.59
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Dissolvable Metals for Transient Electronics. https://app.cochat.ai/papers/10.1002/adfm.201301847
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Yin, L., Cheng, H., Mao, S., Haasch, R., Liu, Y., Xie, X., Hwang, S., Jain, H., Kang, S., Su, Y., Li, R., Huang, Y., & Rogers, J. A. (2014). Dissolvable Metals for Transient Electronics. Advanced Functional Materials. https://doi.org/10.1002/adfm.201301847

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