The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices
Abstract
The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.
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Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Yoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S. (2014) · Advanced Functional Materials · doi:10.1002/adfm.201400064 · Cited by 277
Cited by
A comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Plasticizing Silk Protein for On‐Skin Stretchable Electrodes
Chen, G., Matsuhisa, N., Liu, Z., Qi, D., Cai, P., Jiang, Y., Wan, C., Cui, Y., Leow, W. R., Liu, Z., et al. (2018) · Advanced Materials · doi:10.1002/adma.201800129 · Cited by 343
Self-citationShort-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics
Kim, M.-K., & Lee, J.-S. (2018) · ACS Nano · doi:10.1021/acsnano.7b08331 · Cited by 294
Guan, X., Hu, W., Haque, M. A., Wei, N., Liu, Z., Chen, A., & Wu, T. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201704665 · Cited by 228
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Metadata
- Authors
- Wang, H., Du, Y., Li, Y., Zhu, B., Leow, W. R., Li, Y., Pan, J., Wu, T., & Chen, X.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2015-05-13
- Volume
- 25
- Issue
- 25
- Pages
- 3825-3831
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W1888774078
- Cited by
- 207
- References
- 4
- FWCI
- 11.55
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wang, H., Du, Y., Li, Y., Zhu, B., Leow, W. R., Li, Y., Pan, J., Wu, T., & Chen, X. (2015). Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices. Advanced Functional Materials. https://doi.org/10.1002/adfm.201501389
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