The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.
Piezoelectric Gated Diode of a Single ZnO Nanowire
Abstract
A ZnO nanowire behaves like a rectifier under bending strain, as demonstrated by its current–voltage characteristics (see graph). This is interpreted with the consideration of a piezoelectricity-induced potential energy barrier at the interface of the conductive tip and nanowire (see schematic). Under appropriate bending and voltage control, each NW could correspond to a device element for random-access-memory, diode, and force-sensor applications.
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Cites
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Self-citationRecent Progress in Electronic Skin
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Self-citationA review on ZnO nanostructured materials: energy, environmental and biological applications
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Metadata
- Authors
- He, J. H., Hsin, C. L., Liu, J., Chen, L. J., & Wang, Z. L.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2007-02-12
- Volume
- 19
- Issue
- 6
- Pages
- 781-784
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2062666785
- Cited by
- 398
- References
- 19
- FWCI
- 17.37
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
