The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Random Circuit Breaker Network Model for Unipolar Resistance Switching
Abstract
The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi-metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model.
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Citations
Cites
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
High switching endurance in TaOx memristive devices
Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S. (2010) · Applied Physics Letters · doi:10.1063/1.3524521 · Cited by 637
Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
Miao, F., Strachan, J. P., Yang, J. J., Zhang, M., Goldfarb, I., Torrezan, A. C., Eschbach, P., Kelley, R. D., Medeiros‐Ribeiro, G., & Williams, R. S. (2011) · Advanced Materials · doi:10.1002/adma.201103379 · Cited by 444
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., Wu, W.-W., & Chen, L.-J. (2013) · Nano Letters · doi:10.1021/nl4015638 · Cited by 388
Metadata
- Authors
- Chae, S. C., Lee, J. S., Kim, S., Lee, S. B., Chang, S. H., Liu, C., Kahng, B., Shin, H., Kim, D., Jung, C. U., Seo, S., Lee, M., & Noh, T. W.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2008-03-18
- Volume
- 20
- Issue
- 6
- Pages
- 1154-1159
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2108792250
- Cited by
- 349
- References
- 1
- FWCI
- 33.17
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Random Circuit Breaker Network Model for Unipolar Resistance Switching. https://app.cochat.ai/papers/10.1002/adma.200702024
- The paper
- Chae, S. C., Lee, J. S., Kim, S., Lee, S. B., Chang, S. H., Liu, C., Kahng, B., Shin, H., Kim, D., Jung, C. U., Seo, S., Lee, M., & Noh, T. W. (2008). Random Circuit Breaker Network Model for Unipolar Resistance Switching. Advanced Materials. https://doi.org/10.1002/adma.200702024
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
