The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors
Abstract
Ga doping in indium zinc oxide (IZO)-based amorphous-oxide semiconductors (AOSs) promotes the formation of oxide-lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, low-temperature-annealed AOSs.
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Cited by
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Metadata
- Authors
- Jeong, S., Ha, Y., Moon, J., Facchetti, A., & Marks, T. J.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2010-03-23
- Volume
- 22
- Issue
- 12
- Pages
- 1346-1350
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2055146671
- Cited by
- 548
- References
- 14
- FWCI
- 19.80
- Type
- journal article
- Language
- en
- Open access
- closed
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- Jeong, S., Ha, Y., Moon, J., Facchetti, A., & Marks, T. J. (2010). Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors. Advanced Materials. https://doi.org/10.1002/adma.200902450
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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