The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
Open accessAbstract
Recently, we have demonstrated the potential of amorphous oxide semiconductors (AOSs) for developing flexible thin-film transistors (TFTs). A material exploration of AOSs desired as the channel layer in TFTs is most important for developing high-performance devices. Here, we report our concept of material exploration for AOSs in high-performance flexible and transparent TFTs from the viewpoints of chemical bonding and electronic structure in oxide semiconductors. We find that amorphous In–Ga–Zn–O (a-IGZO) exhibits good carrier transport properties such as reasonably high Hall mobilities (>10 cm 2 ·V -1 ·s -1 ) and a good controllability of carrier concentration from <10 15 to 10 20 cm -3 . In addition, a-IGZO films have better chemical stabilities in ambient atmosphere and at temperatures up to 500 °C. The flexible and transparent TFT fabricated using a-IGZO channel layer at room temperature operated with excellent performances, such as normally-off characteristics, on/off current ratios (∼10 6 ) and field-effect mobilities (∼10 cm 2 ·V -1 ·s -1 ), which are higher by an order of magnitude than those of amorphous Si:H and organics TFTs.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Optical Properties and Electronic Structure of Amorphous Germanium
Tauc, J., Grigorovici, R., & Vancu, A. (1966) · physica status solidi (b) · doi:10.1002/pssb.19660150224 · Cited by 11,071
P-type electrical conduction in transparent thin films of CuAlO2
Kawazoe, H., Yasukawa, M., Hyodo, H., Kurita, M., Yanagi, H., & Hosono, H. (1997) · Nature · doi:10.1038/40087 · Cited by 2,132
Self-citationThin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., & Hosono, H. (2003) · Science · doi:10.1126/science.1083212 · Cited by 1,884
Self-citationLarge-scale complementary integrated circuits based on organic transistors
Crone, B., Dodabalapur, A., Lin, Y.-Y., Filas, R. W., Bao, Z., LaDuca, A., Sarpeshkar, R., Katz, H. E., & Li, W. (2000) · Nature · doi:10.1038/35000530 · Cited by 1,266
Fundamentals of Inorganic Glasses
(2019) · Elsevier eBooks · doi:10.1016/c2017-0-04281-7 · Cited by 1,246
Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators
Dimitrakopoulos, C. D., Purushothaman, S., Kymissis, I., et al. (1999) · Science · doi:10.1126/science.283.5403.822 · Cited by 851
Flexible active-matrix electronic ink display
Chen, Y., Au, J., Kazlas, P., Ritenour, A., Gates, H., & McCreary, M. (2003) · Nature · doi:10.1038/423136a · Cited by 595
Self-Aligned, Vertical-Channel, Polymer Field-Effect Transistors
Stingelin, N., Friend, R. H., & Sirringhaus, H. (2003) · Science · doi:10.1126/science.1081279 · Cited by 563
Technology and Applications of Amorphous Silicon
(2000) · Springer Series in Materials Science · doi:10.1007/978-3-662-04141-3 · Cited by 554
Insecticide resistance in mosquito vectors
Weill, M., Lutfalla, G., Mogensen, K., Chandre, F., Berthomieu, A., Berticat, C., Pasteur, N., Philips, A., Fort, P., & Raymond, M. (2003) · Nature · doi:10.1038/423136b · Cited by 515
Cited by
Inorganic Semiconductors for Flexible Electronics
Sun, Y., & Rogers, J. A. (2007) · Advanced Materials · doi:10.1002/adma.200602223 · Cited by 874
Jeong, S., Ha, Y., Moon, J., Facchetti, A., & Marks, T. J. (2010) · Advanced Materials · doi:10.1002/adma.200902450 · Cited by 548
Robertson, J., & Clark, S. J. (2011) · Physical Review B · doi:10.1103/physrevb.83.075205 · Cited by 301
From softening polymers to multimaterial based bioelectronic devices
Ecker, M., Joshi-Imre, A., Modi, R., Frewin, C. L., Garcia-Sandoval, A., Maeng, J., Gutierrez-Heredia, G., Pancrazio, J. J., & Voit, W. E. (2019) · Multifunctional Materials · doi:10.1088/2399-7532/aaed58 · Cited by 34
Metadata
- Authors
- Nomura, K., Takagi, A., Kamiya, T., Ohta, H., Hirano, M., & Hosono, H.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2006-05-01
- Volume
- 45
- Issue
- 5S
- Pages
- 4303
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2030195401
- Cited by
- 758
- References
- 13
- FWCI
- 24.63
- Type
- journal article
- Language
- en
- Open access
- bronze
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors. https://app.cochat.ai/papers/10.1143/jjap.45.4303
- The paper
- Nomura, K., Takagi, A., Kamiya, T., Ohta, H., Hirano, M., & Hosono, H. (2006). Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.45.4303
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
