The DOI matches its Crossref record; 26 of the 26 references it cites were found in a registry or an index.
Direct Identification of the Conducting Channels in a Functioning Memristive Device
Abstract
Titanium dioxide memristive devices have been non-destructively characterized using x-ray absorption spectromicroscopy and TEM. These techniques allow direct identification of the chemistry and structure of the conducting channel responsible for the bipolar resistance switching seen in these devices. Within the TiO2 matrix, we observe the formation of a Ti4O7 Magnéli phase possessing metallic properties and ordered planes of oxygen vacancies.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Self-citationMemristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Self-citationMemristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Szot, K., Speier, W., Bihlmayer, G., & Waser, R. (2006) · Nature Materials · doi:10.1038/nmat1614 · Cited by 1,651
Oxide Interfaces—An Opportunity for Electronics
Mannhart, J., & Schlom, D. G. (2010) · Science · doi:10.1126/science.1181862 · Cited by 1,351
Switching dynamics in titanium dioxide memristive devices
Pickett, M. D., Strukov, D. B., Borghetti, J. L., Yang, J. J., Snider, G. S., Stewart, D. R., & Williams, R. S. (2009) · Journal of Applied Physics · doi:10.1063/1.3236506 · Cited by 764
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Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Self-citationResistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Self-citationA comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
High switching endurance in TaOx memristive devices
Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S. (2010) · Applied Physics Letters · doi:10.1063/1.3524521 · Cited by 637
Self-citationKim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
Metadata
- Authors
- Strachan, J. P., Pickett, M. D., Yang, J. J., Aloni, S., David Kilcoyne, A. L., Medeiros‐Ribeiro, G., & Stanley Williams, R.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2010-06-04
- Volume
- 22
- Issue
- 32
- Pages
- 3573-3577
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2063239708
- Cited by
- 329
- References
- 26
- FWCI
- 30.40
- Type
- journal article
- Language
- en
- Open access
- closed
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- Strachan, J. P., Pickett, M. D., Yang, J. J., Aloni, S., David Kilcoyne, A. L., Medeiros‐Ribeiro, G., & Stanley Williams, R. (2010). Direct Identification of the Conducting Channels in a Functioning Memristive Device. Advanced Materials. https://doi.org/10.1002/adma.201000186
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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