Student or educator? Sign up with your school email and get 6 months of Pro free.
CoChat
Sign Up
Cited by 1,651

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

Szot, Krzysztof, Speier, Wolfgang, Bihlmayer, Gustav, Waser, Rainer·2006·Nature Materials
DOI 10.1038/nmat1614
Open this paper in CoChat — free account

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1038/nmat1614

Cites

2 of 2 references verified0 citation errors · 0 not checkable

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cites

Show all 2 references

Research works printed but not linked: 48

  1. Waser, R. (ed.) Nanoelectronics and Information Technology (Wiley-VCH, Weinheim, 2003).
  2. Brewer, J. E., Zhirnov, V. V. & Hutchby, J. A. IEEE Circuits Devices Mag. (March/April), 13–20 (2005). · DOI
  3. Pinnow, C.-U. & Mikolajick, T. Material aspects in emerging non-volatile memories. J. Electrochem. Soc. 151, K13–K19 (2004). · DOI
  4. Pagnia, H. & Sotnik, N. Bistable switching in electro-formed metal-insulator-metal devices. Phys. Status Solidi A 108, 11–65 (1988). · DOI · Paper page
  5. Greer, A. L. & Mathur, N. Changing face of the chameleon. Nature 437, 1246–1247 (2005). · DOI
  6. Watanabe, Y. et al. Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals. Appl. Phys. Lett. 78, 3738–3740 (2001). · DOI · Paper page
  7. Beck, A., Bednorz, J. G., Gerber, Ch., Rossel, C. & Widmer, D. Reproducible switching effect in thin oxide films for memory applications. Appl. Phys. Lett. 77, 139–141 (2000). · DOI · Paper page
  8. Rodríguez Contreras, J. et al. Resistive switching in metal–ferroelectric–metal junctions. Appl. Phys. Lett. 83, 4595–4597 (2003). · doi:10.1063/1.1627944
  9. Levy, P. et al. Nonvolatile magnetoresistive memory in phase separated La0.325Pr0.300Ca0.375MnO3 . Phys. Rev. B 65, R140401 (2002). · doi:10.1103/physrevb.65.140401
  10. Asamitsu, A., Tomioka, Y., Kuwahara, H. & Tokura, Y. Current switching of resisitive states in magnetoresistive manganites. Nature 388, 50–52 (1997). · DOI · Paper page
  11. Liu, S. Q., Wu, N. J. & Ignatiev, A. Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl. Phys. Lett. 76, 2749–2751 (2000). · DOI · Paper page
  12. Gu, R. Y., Wang, Z. D. & Ting, C. S. Theory of electric-field-induced metal-insulator transition in doped manganites. Phys. Rev. B 67, 153101 (2003). · doi:10.1103/physrevb.67.153101
  13. Sawa, A., Fujii, T., Kawasaki, M. & Tokura, Y. Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface. Appl. Phys. 85, 4073–4075 (2004).
  14. Rossel, C., Meijer, G. I., Brémaud, D. & Widmer, D. Electrical current distribution across a metal-insulator-metal structure during bistable switching. J. Appl. Phys. 90, 2892–2898 (2001). · DOI
  15. Tsui, S. et al. Field-induced resistive switching in metal-oxide interfaces. Appl. Phys. Lett. 85, 317–319 (2004). · DOI
  16. Rozenberg, M. J., Inoue, I. H. & Sánchez, M. J. Nonvolatile memory with multilevel switching: A basic model. Phys. Rev. Lett. 92, 178302 (2004). · DOI · Paper page
  17. Jia, C. L., Thust, A. & Urban, K. Atomic-scale analysis of the oxygen configuration at a SrTiO3 dislocation core. Phys. Rev. Lett. 95, 225506 (2005). · DOI
  18. Nakamury, A., Matsunaga, K., Tohma, J., Yamamoto, T. & Ikuhara, Y. Conducting nanowires in insulating ceramics. Nature Mater. 2, 453–456 (2003). · DOI
  19. Szot, K., Speier, W., Carius, R., Zastrow, U. & Beyer, W. Localized metallic conductivity and self-healing during thermal reduction of SrTiO3 . Phys. Rev. Lett. 88, 75508 (2002). · DOI · Paper page
  20. Szot, K., Speier, W. & Eberhardt, W. Microscopic nature of the metal to insulator phase transition induced through electro-reduction in single-crystal KNbO3 . Appl. Phys. Lett. 60, 1190–1192 (1992). · DOI
  21. Wang, R., Zhu, Y. & Shapiro, S. M. Structural defects and the origin of the second length scale in SrTiO3 . Phys. Rev. Lett. 80, 2370–2373 (1998). · DOI
  22. Meijer, G. I. et al. Valence states of Cr and the insulator-to-metal transition in Cr-doped SrTiO3 . Phys. Rev. B 72, 155102 (2005). · DOI
  23. Yamada, H. & Miller, G. R. Point-defects in reduced strontium-titanate. J. Solid State Chem. 6, 169–177 (1973). · doi:10.1016/0022-4596(73)90216-8
  24. Takayasu, H. Simulation of electrical breakdown and resulting variant of percolation fractals. Phys. Rev. Lett. 54, 1099–1101 (1985). · doi:10.1103/physrevlett.54.1099
  25. Benguigui, L. Simulation of dielectric failure by means of resistor-diode random lattices. Phys. Rev. B 38, 7211–7214 (1988). · doi:10.1103/physrevb.38.7211
  26. Rakhshani, A. E., Hogarth, C. A. & Abidi, A. A. Observations of local defects caused by eletrical conduction through thin sandwich structures of Ag–SiO/BaO–Ag. J. Non-Cryst. Solids 20, 25–42 (1976). · DOI
  27. Ray, A. K. & Hogarth, C. A. Recent advances in the polyfilamentary model for electronic conduction in electro-formed insulating films. Int. J. Electron. 69, 97–107 (1990). · DOI
  28. Gravano, S., Amr, E., Gould, R. D. & Abu Samra, M. Monte Carlo simulation of current-voltage characteristics in metal-insulator-metal thin film structures. Thin Solid Films 433, 321–325 (2003). · DOI
  29. Beaulieu, R. P., Sulway, D. V. & Cox, C. D. The detection of current filaments in VO2 thin-film switches using the scanning electron microscope. Solid-State Electron. 16, 428–429 (1973). · DOI
  30. Henrich, V. E., Dresselhaus, G. & Zeiger, H. J. Surface defects and the electronic structure of SrTiO3 surfaces. Phys. Rev. B 17, 4908–4921 (1978). · DOI · Paper page
  31. Bursill, La., Peng, J. & Fan, X. Structure and reactivity of atomic surfaces of barium-titanate under electron-irradiation. Ferroelectrics 97, 71–84 (1989). · doi:10.1080/00150198908018084
  32. Luo, E. Z. et al. Identifying conducting phase from the insulating matrix in percolating metal-insulator nanocomposites by conducting atomic force microscopy. Appl. Phys. A 66, 1171–1174 (1998). · doi:10.1007/s003390051320
  33. Narayan, J., Weeks, R. A. & Sonder, E. Aggregation of defects and thermal-electric breakdown in MgO. J. Appl. Phys. 49, 5977–5981 (1978). · doi:10.1063/1.324565
  34. Peter, F. et al. Piezoresponse in the light of surface adsorbates: Relevance of defined surface conditions for perovskite materials. Appl. Phys. Lett. 85, 2896–2898 (2004). · doi:10.1063/1.1799241
  35. Jia, C.-L., Lentzen, M. & Urban, K. High-resolution transmission electron microscopy using negative spherical aberration. Microsc. Microanal. 10, 174–184 (2004). · DOI · Paper page
  36. Kim, M. et al. Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3 . Phys. Rev. Lett. 86, 4056–4059 (2001). · DOI · Paper page
  37. Klie, R. F., Beleggia, M., Zhu, Y., Buban, J. P. & Browning, N. D. Atomic-scale model of the grain boundary potential in perovskite oxides. Phys. Rev. B 68, 214101 (2003). · doi:10.1103/physrevb.68.214101
  38. Fang, Z. & Terakura, K. Spin and orbital polarizations around oxygen vacancies on the (001) surfaces of SrTiO3 . Surf. Sci. 470, L75–L80 (2000). · doi:10.1016/s0039-6028(00)00914-6
  39. Shanthi, N. & Sarma, D. D. Electronic structure of electron doped SrTiO3: SrTiO3−δ and Sr1−xLaxTiO3 . Phys. Rev. B 57, 2153–2158 (1998). · doi:10.1103/physrevb.57.2153
  40. Baikalov, A. et al. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface. Appl. Phys. Lett. 83, 957–959 (2003). · DOI · Paper page
  41. Fors, R., Khartsev, S. I. & Grishin, A. M. Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition. Phys. Rev. B 71, 045305 (2005). · DOI · Paper page
  42. Shin, J. et al. Surface stability of epitaxial SrRuO3 films. Surf. Sci. 581, 118–132 (2005). · doi:10.1016/j.susc.2005.02.038
  43. Chen, X., Strozier, J., Wu, N. J. & Ignatiev, A. Direct resistance profile for an electrical pulse induced resistance change device. Appl. Phys. Lett. 87, 233506 (2005). · DOI
  44. Aird, A. & Salje, E. K. H. Sheet superconductivity in twin walls: experimental evidence of WO3−x . J. Phys. Condens. Matter 10, L377–L380 (1998). · doi:10.1088/0953-8984/10/22/003
  45. Choi, B. J. et al. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition. J. Appl. Phys. 98, 033715 (2005). · DOI · Paper page
  46. Perdew, J. P. et al. Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation. Phys. Rev. B 46, 6671–6687 (1992). · DOI · Paper page
  47. Wimmer, E., Krakauer, H., Weinert, M. & Freeman, A. J. Full-potential self-consistent linearized-augmented-plane-wave method for calculating the electronic structure of molecules and surfaces: O2 molecule. Phys. Rev. B 24, 864–875 (1981). · DOI · Paper page
  48. Anisimov, V. I., Zaanen, J. & Andersen, O. K. Band theory and Mott insulators: Hubbard U instead of Stoner I. Phys. Rev. B 44, 943–954 (1991). · DOI · Paper page

Cited by

See all 1,651

Metadata

Authors
Szot, K., Speier, W., Bihlmayer, G., & Waser, R.
Venue
Nature Materials
Publisher
Springer Science and Business Media LLC
Published
2006-03-26
Volume
5
Issue
4
Pages
312-320
ISSN
  • 1476-1122 (ISSN-L)
  • 1476-4660
DOI
10.1038/nmat1614
OpenAlex
W2079000393
Cited by
1,651
References
2
FWCI
55.56
Type
journal article
Language
en
Open access
closed
Licence

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. https://app.cochat.ai/papers/10.1038/nmat1614
The paper
Szot, K., Speier, W., Bihlmayer, G., & Waser, R. (2006). Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nature Materials. https://doi.org/10.1038/nmat1614

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.