The DOI matches its Crossref record; 149 of the 149 references it cites were found in a registry or an index.
Recommended Methods to Study Resistive Switching Devices
Open accessAbstract
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.
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Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Self-citationTraining and operation of an integrated neuromorphic network based on metal-oxide memristors
Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., & Strukov, D. B. (2015) · Nature · doi:10.1038/nature14441 · Cited by 3,001
Self-citationResistive switching in transition metal oxides
Sawa, A. (2008) · Materials Today · doi:10.1016/s1369-7021(08)70119-6 · Cited by 2,948
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationMemristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Wang, Z., Joshi, S., Savel’ev, S. E., Jiang, H., Midya, R., Lin, P., Hu, M., Ge, N., Strachan, J. P., Li, Z., et al. (2017) · Nature Materials · doi:10.1038/nmat4756 · Cited by 2,358
Self-citationLee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Szot, K., Speier, W., Bihlmayer, G., & Waser, R. (2006) · Nature Materials · doi:10.1038/nmat1614 · Cited by 1,651
Synaptic electronics: materials, devices and applications
Kuzum, D., Yu, S., & Philip Wong, H.-S. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/38/382001 · Cited by 1,258
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.2001146 · Cited by 1,150
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
Sangwan, V. K., Lee, H.-S., Bergeron, H., Balla, I., Beck, M. E., Chen, K.-S., & Hersam, M. C. (2018) · Nature · doi:10.1038/nature25747 · Cited by 1,023
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Two-dimensional materials for next-generation computing technologies
Liu, C., Chen, H., Wang, S., Liu, Q., Jiang, Y.-G., Zhang, D. W., Liu, M., & Zhou, P. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0724-3 · Cited by 1,045
Self-citationNeuromorphic nanoelectronic materials
Sangwan, V. K., & Hersam, M. C. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0647-z · Cited by 890
Memristive technologies for data storage, computation, encryption, and radio-frequency communication
Lanza, M., Sebastian, A., Lu, W. D., Le Gallo, M., Chang, M.-F., Akinwande, D., Puglisi, F. M., Alshareef, H. N., Liu, M., & Roldan, J. B. (2022) · Science · doi:10.1126/science.abj9979 · Cited by 708
Self-citationChen, S., Mahmoodi, M. R., Shi, Y., Mahata, C., Yuan, B., Liang, X., Wen, C., Hui, F., Akinwande, D., Strukov, D. B., et al. (2020) · Nature Electronics · doi:10.1038/s41928-020-00473-w · Cited by 448
Self-citationMehonic, A., Sebastian, A., Rajendran, B., Simeone, O., Vasilaki, E., & Kenyon, A. J. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000085 · Cited by 331
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Metadata
- Authors
- Lanza, M., Wong, H. ‐. P., Pop, E., Ielmini, D., Strukov, D., Regan, B. C., Larcher, L., Villena, M. A., Yang, J. J., Goux, L., Belmonte, A., Yang, Y., Puglisi, F. M., Kang, J., Magyari‐Köpe, B., Yalon, E., Kenyon, A., Buckwell, M., Mehonic, A., Shluger, A., Li, H., Hou, T., Hudec, B., Akinwande, D., Ge, R., Ambrogio, S., Roldan, J. B., Miranda, E., Suñe, J., Pey, K. L., Wu, X., Raghavan, N., Wu, E., Lu, W. D., Navarro, G., Zhang, W., Wu, H., Li, R., Holleitner, A., Wurstbauer, U., Lemme, M. C., Liu, M., Long, S., Liu, Q., Lv, H., Padovani, A., Pavan, P., Valov, I., Jing, X., Han, T., Zhu, K., Chen, S., Hui, F., & Shi, Y.
- Venue
- Advanced Electronic Materials
- Publisher
- Wiley
- Published
- 2018-09-27
- Volume
- 5
- Issue
- 1
- ISSN
- 2199-160X (ISSN-L)
- OpenAlex
- W2894173111
- Cited by
- 674
- References
- 149
- FWCI
- 25.97
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Lanza, M., Wong, H. ‐. P., Pop, E., Ielmini, D., Strukov, D., Regan, B. C., Larcher, L., Villena, M. A., Yang, J. J., Goux, L., Belmonte, A., Yang, Y., Puglisi, F. M., Kang, J., Magyari‐Köpe, B., Yalon, E., Kenyon, A., Buckwell, M., Mehonic, A., . . . Shi, Y. (2019). Recommended Methods to Study Resistive Switching Devices. Advanced Electronic Materials. https://doi.org/10.1002/aelm.201800143
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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