The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Ruthenium Thin Films Grown by Atomic Layer Deposition
Abstract
Thin films of metallic ruthenium were grown by atomic layer deposition (ALD) in the temperature range 275–400 °C using bis(cyclopentadienyl)ruthenium (RuCp 2) and oxygen as precursors. The ruthenium films were grown on thin Al 2 O 3 and TiO 2 films on glass. X‐ray diffraction (XRD) analysis indicated that the films were polycrystalline metallic ruthenium and scanning electron microscopy (SEM) studies showed that the films had excellent conformality. The impurity content of the films, as measured by time‐of‐flight elastic recoil detection analysis (TOF‐ERDA), were very low. All the films had resistivities below 20 μΩ cm.
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Parkin, S., More, N., & Roche, K. P. (1990) · Physical Review Letters · doi:10.1103/physrevlett.64.2304 · Cited by 2,756
Suntola, T. (1992) · Thin Solid Films · doi:10.1016/0040-6090(92)90874-b · Cited by 1,367
Ritala, M., & Leskelä, M. (2002) · Handbook of Thin Films · doi:10.1016/b978-012512908-4/50005-9 · Cited by 451
Self-citationChemical Vapor Deposition at Low Temperatures
Viguie, J. C., & Spitz, J. (1975) · Journal of The Electrochemical Society · doi:10.1149/1.2134266 · Cited by 236
Klaus, J. W., Ferro, S. J., & George, S. M. (2000) · Thin Solid Films · doi:10.1016/s0040-6090(99)01076-7 · Cited by 189
Preparation and Properties of Ru and RuO2 Thin Film Electrodes for Ferroelectric Thin Films
Maiwa, H., Ichinose, N., & Okazaki, K. (1994) · Japanese Journal of Applied Physics · doi:10.1143/jjap.33.5223 · Cited by 67
Yamamichi, S., Lesaicherre, P., Yamaguchi, H., Takemura, K., Sone, S., Yabuta, H., Sato, K., Tamura, T., Nakajima, K., Ohnishi, S., et al. (1997) · IEEE Transactions on Electron Devices · doi:10.1109/16.595934 · Cited by 45
Cited by
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
Puurunen, R. L. (2005) · Journal of Applied Physics · doi:10.1063/1.1940727 · Cited by 2,609
Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
Leskelä, M., & Ritala, M. (2003) · Angewandte Chemie International Edition · doi:10.1002/anie.200301652 · Cited by 1,109
Self-citationAtomic layer deposition of transition metals
Lim, B. S., Rahtu, A., & Gordon, R. G. (2003) · Nature Materials · doi:10.1038/nmat1000 · Cited by 657
Advanced carbon aerogels for energy applications
Biener, J., Stadermann, M., Suss, M., Worsley, M. A., Biener, M. M., Rose, K. A., & Baumann, T. F. (2011) · Energy & Environmental Science · doi:10.1039/c0ee00627k · Cited by 651
Ritala, M., & Leskelä, M. (2002) · Handbook of Thin Films · doi:10.1016/b978-012512908-4/50005-9 · Cited by 451
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Metadata
- Authors
- Aaltonen, T., Alén, P., Ritala, M., & Leskelä, M.
- Venue
- Chemical Vapor Deposition
- Publisher
- Wiley
- Published
- 2003-01-03
- Volume
- 9
- Issue
- 1
- Pages
- 45-49
- ISSN
- 0948-1907 (ISSN-L)
- 1521-3862
- OpenAlex
- W1995908862
- Cited by
- 276
- References
- 7
- FWCI
- 11.40
- Type
- journal article
- Language
- en
- Open access
- closed
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