The DOI matches its Crossref record; 36 of the 36 references it cites were found in a registry or an index.
High Detectivity Graphene‐Silicon Heterojunction Photodetector
Abstract
A graphene/n‐type silicon (n‐Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high‐performance photodetectors. However, graphene/n‐Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n‐Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n‐Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10 13 cm Hz 1/2 W‐1 at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n‐Si heterojunction photodetectors possess high responsivity of 0.73 A W−1 and high photo‐to‐dark current ratio of ≈10 7. The current noise spectral density of the graphene/n‐Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors.
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Self-citation
Metadata
- Authors
- Li, X., Zhu, M., Du, M., Lv, Z., Zhang, L., Li, Y., Yang, Y., Yang, T., Li, X., Wang, K., Zhu, H., & Fang, Y.
- Venue
- Small
- Publisher
- Wiley
- Published
- 2015-12-08
- Volume
- 12
- Issue
- 5
- Pages
- 595-601
- ISSN
- 1613-6810 (ISSN-L)
- 1613-6829
- OpenAlex
- W2196483977
- Cited by
- 512
- References
- 36
- FWCI
- 18.25
- Type
- journal article
- Language
- en
- Open access
- closed
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