Amphoteric nature of copper impurities in Bi2Se3 crystals
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Copper intercalated between selenium planes acts as a single electron donor, while copper substituting bismuth contributes two holes.
“Copper atoms intercalated between van der Waals-like bonded selenium planes (Cu int ) in the crystal are known to be single electron donors, whereas substitutional defects in which copper replaces bismuth in the lattice (Cu Bi ) contribute two holes to the system, which is similar to the behaviour reported in the impurity-atom study on the Bi 2 Se 3 matrix 25 .”
From Observation of topological order in a superconducting doped topological insulator (2010) · cites this paper as [25]
Bi2Se3 is a layered compound made of weakly van der Waals bonded Se-Bi-Se-Bi-Se five-layer sandwiches, yielding excellent basal plane cleavage and high-quality layered crystals.
“The resulting Se-Bi-Se-Bi-Se five layer sandwich is only weakly van der Waals bonded to the next sandwich, through the outer Se layers, yielding a material with excellent basal plane cleavage and excellent quality layered crystals both in the bulk and in thin films 19-21 .”
Cites
Caywood, L. P., & Miller, G. R. (1970) · Physical Review B · doi:10.1103/physrevb.2.3209 · Cited by 89 · see citing works
Grundzüge der anorganischen Kristallchemie
Krebs, H., Kühn, G., & Neels, H. (1969) · De Gruyter eBooks · doi:10.1515/9783112653722-018 · Cited by 62 · see citing works
�ber Kristallstruktur und elektrische Eigenschaften der Wismutselenide Bi2Se2 und Bi2Se3
Gobrecht, H., Boeters, K. E., & Pantzer, G. (1964) · The European Physical Journal A · doi:10.1007/bf01375404 · Cited by 46 · see citing works
Constant Energy Surfaces of n‐Type Bismuth Selenide from the Shubnikov‐de Haas Effect
Köhler, H., & Landwehr, G. (1971) · physica status solidi (b) · doi:10.1002/pssb.2220450246 · Cited by 31 · see citing works
Kühn, G., & Neels, H. (1969) · Kristall und Technik · doi:10.1002/crat.19690040419 · Cited by 30 · see citing works
Abh�ngigkeit der effektiven Masse von der Ladungstr�gerkonzentration im Bi2Se3
Gobrecht, H., & Seeck, S. (1969) · The European Physical Journal A · doi:10.1007/bf01393247 · Cited by 28 · see citing works
Gobrecht, H., Seeck, S., & Klose, T. (1966) · The European Physical Journal A · doi:10.1007/bf01327261 · Cited by 25 · see citing works
Free carrier scattering mechanism in Bi2Se3 crystals
Bogatyrev, I. F., Horák, J., Vasko, A. C., & Tichý, L. (1973) · Czechoslovak Journal of Physics · doi:10.1007/bf01586850 · Cited by 7 · see citing works
Self-citation
Flagged first, then by citations
1 of the 9 references couldn’t be matched to a known paper.
Cited by
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Hor, Y. S., Williams, A. J., Checkelsky, J. G., Roushan, P., Seo, J., Xu, Q., Zandbergen, H. W., Yazdani, A., Ong, N. P., & Cava, R. J. (2010) · Physical Review Letters · doi:10.1103/physrevlett.104.057001 · Cited by 1,028 · see citing works
Hor, Y. S., Richardella, A., Roushan, P., Xia, Y., Checkelsky, J. G., Yazdani, A., Hasan, M. Z., Ong, N. P., & Cava, R. J. (2009) · Physical Review B · doi:10.1103/physrevb.79.195208 · Cited by 647 · see citing works
Observation of topological order in a superconducting doped topological insulator
Wray, L. A., Xu, S.-Y., Xia, Y., Hor, Y. S., Qian, D., Fedorov, A. V., Lin, H., Bansil, A., Cava, R. J., & Hasan, M. Z. (2010) · Nature Physics · doi:10.1038/nphys1762 · Cited by 464 · see citing works
Bulk Superconducting Phase with a Full Energy Gap in the Doped Topological Insulator CuxBi2Se3
Kriener, M., Segawa, K., Ren, Z., Sasaki, S., & Ando, Y. (2011) · Physical Review Letters · doi:10.1103/physrevlett.106.127004 · Cited by 306 · see citing works
Rajapakse, M., Karki, B., Abu, U. O., Pishgar, S., Musa, M. R. K., Riyadh, S. M. S., Yu, M., Sumanasekera, G., & Jasinski, J. B. (2021) · npj 2D Materials and Applications · doi:10.1038/s41699-021-00211-6 · Cited by 273 · see citing works
Chemical Intercalation of Zerovalent Metals into 2D Layered Bi 2 Se 3 Nanoribbons
Koski, K. J., Wessells, C., Reed, B. W., Cha, J. J., Kong, D., & Cui, Y. (2012) · Journal of the American Chemical Society · doi:10.1021/ja304925t · Cited by 208 · see citing works
Tolerance of Topological Surface States towards Magnetic Moments: Fe on Bi2Se3
Scholz, M. R., Sánchez‐Barriga, J., Marchenko, D. E., Varykhalov, A., Volykhov, A. A., Yashina, L. V., & Rader, O. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.256810 · Cited by 199 · see citing works
Understanding Doping of Quantum Materials
Zunger, A., & Malyi, O. I. (2021) · Chemical Reviews · doi:10.1021/acs.chemrev.0c00608 · Cited by 175 · see citing works
Electrochemical synthesis and superconducting phase diagram of Cu x Bi 2 Se 3
Kriener, M., Segawa, K., Ren, Z., Sasaki, S., Wada, S., Kuwabata, S., & Ando, Y. (2011) · Physical Review B · doi:10.1103/physrevb.84.054513 · Cited by 128 · see citing works
Yao, J., Koski, K. J., Luo, W., Cha, J. J., Hu, L., Kong, D., Narasimhan, V. K., Huo, K., & Cui, Y. (2014) · Nature Communications · doi:10.1038/ncomms6670 · Cited by 123 · see citing works
Emergence of Decoupled Surface Transport Channels in Bulk Insulating Bi2Se3 Thin Films
Brahlek, M., Koirala, N., Salehi, M., Bansal, N., & Oh, S. (2014) · Physical Review Letters · doi:10.1103/physrevlett.113.026801 · Cited by 122 · see citing works
A brief review of Bi2Se3 based topological insulator: From fundamentals to applications
Mazumder, K., & Shirage, P. M. (2021) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2021.161492 · Cited by 118 · see citing works
Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3
Hor, Y. S., Checkelsky, J. G., Qu, D., Ong, N. P., & Cava, R. J. (2010) · Journal of Physics and Chemistry of Solids · doi:10.1016/j.jpcs.2010.10.027 · Cited by 113 · see citing works
Point-contact spectroscopy of Cu 0.2 Bi 2 Se 3 single crystals
Kirzhner, T., Lahoud, E., Chashka, K. B., Salman, Z., & Kanigel, A. (2012) · Physical Review B · doi:10.1103/physrevb.86.064517 · Cited by 97 · see citing works
Tuning carrier type and density in Bi2Se3 by Ca-doping
Wang, Z., Lin, T., Wei, P., Liu, X., Dumas, R. K., Liu, K., & Shi, J. (2010) · Applied Physics Letters · doi:10.1063/1.3473778 · Cited by 95 · see citing works
Weak antilocalization and electron-electron interaction effects in Cu-doped Bi 2 Se 3 films
Takagaki, Y., Jenichen, B., Jahn, U., Ramsteiner, M., & Friedland, K. ‐. (2012) · Physical Review B · doi:10.1103/physrevb.85.115314 · Cited by 87 · see citing works
Modulation Doping Enables Ultrahigh Power Factor and Thermoelectric ZT in n‐Type Bi 2 Te 2.7 Se 0.3
Chen, C., Wang, T., Yu, Z., Hutabalian, Y., Ranganayakulu, V. K., Chen, C., Hsieh, W., Jeng, H., Wei, D., & Chen, Y. (2022) · Advanced Science · doi:10.1002/advs.202201353 · Cited by 84 · see citing works
Structural defects and electronic properties of the Cu-doped topological insulator Bi 2Se3
Wang, Y.-L., Xu, Y., Jiang, Y.-P., Liu, J., Chang, C., Chen, M., Li, Z., Song, C., Wang, L., He, K., et al. (2011) · Physical Review B · doi:10.1103/physrevb.84.075335 · Cited by 74 · see citing works
THz Generation and Detection on Dirac Fermions in Topological Insulators
Luo, C., Chen, H.-J., Tu, C.-M., Lee, C. C., Ku, S. A., Tzeng, W., Yeh, T.-T., Chiang, M. C., Wang, H. J., Chu, W. C., et al. (2013) · Advanced Optical Materials · doi:10.1002/adom.201300221 · Cited by 59 · see citing works
Behavior of Ag Admixtures in Sb2Te3and Bi2Te3Single Crystals
Navrátil, J., Klichová, I., Karamazov, S., Šrámková, J., & Horák, J. (1998) · Journal of Solid State Chemistry · doi:10.1006/jssc.1998.7818 · Cited by 51 · see citing works
Self-citationTichý, L., & Horák, J. (1979) · Physical review. B, Condensed matter · doi:10.1103/physrevb.19.1126 · Cited by 39 · see citing works
Self-citationHigh‐Temperature Thermoelectric Properties of Sn‐Doped β‐As 2 Te 3
Vaney, J., Carreaud, J., Delaizir, G., Pradel, A., Alejandra, P. A., Morin, C., Alleno, E., Monnier, J., Gonçalves, A. P., Candolfi, C., et al. (2015) · Advanced Electronic Materials · doi:10.1002/aelm.201400008 · Cited by 37 · see citing works
Photoemission-induced gating of topological insulators
Kordyuk, A. A., Kim, T. K., Zabolotnyy, V. B., Evtushinsky, D. V., Bauch, M., Heß, C., Büchner, B., Berger, H., & Борисенко, С. В. (2011) · Physical Review B · doi:10.1103/physrevb.83.081303 · Cited by 36 · see citing works
Spin-orbital ground states of superconducting doped topological insulators: A Majorana platform
Wray, L. A., Xu, S., Xia, Y., Qian, D., Fedorov, A. V., Lin, H., Bansil, A., Fu, L., Hor, Y. S., Cava, R. J., et al. (2011) · Physical Review B · doi:10.1103/physrevb.83.224516 · Cited by 35 · see citing works
Musah, J., Yanjun, X., Ilyas, A. M., Novak, T. G., Jeon, S., Arava, C. M., Новиков, С. В., Никулин, Д. С., Xu, W., Liu, L., et al. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b11344 · Cited by 34 · see citing works
Structure and transport properties of Cu-doped Bi2 Se3 films
Shirasawa, T., Sugiki, M., Hirahara, T., Aitani, M., Shirai, T., Hasegawa, S., & Takahashi, T. (2014) · Physical Review B · doi:10.1103/physrevb.89.195311 · Cited by 31 · see citing works
Exploring the doping effects of copper on thermoelectric properties of lead selenide
Gayner, C., Sharma, R., Mallik, I., Das, M. K., & Kar, K. K. (2016) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/49/28/285104 · Cited by 30 · see citing works
Xiong, Y., Zhou, G., Lai, N., Wang, X., Lu, Y., Prezhdo, O. V., & Xu, D. (2021) · ACS Nano · doi:10.1021/acsnano.0c08685 · Cited by 28 · see citing works
Musah, J., Ilyas, A. M., Venkatesh, S., Mensah, S., Kwofie, S., Roy, V. A. L., & Wu, C. L. (2022) · Nano Research Energy · doi:10.26599/nre.2022.9120034 · Cited by 28 · see citing works
Screening metal diffusion barriers for thermoelectric Bi0.5Sb1.5Te3
Liu, M., Li, W., & Pei, Y. (2023) · Science China Materials · doi:10.1007/s40843-023-2696-1 · Cited by 24 · see citing works
Wu, K., Ramachandran, B., Kuo, Y. K., Sankar, R., & Chou, F. C. (2016) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2016.04.306 · Cited by 22 · see citing works
Energetics and diffusion of gold in bismuth telluride-based thermoelectric compounds
Shaughnessy, M., Bartelt, N. C., Zimmerman, J. A., & Sugar, J. D. (2014) · Journal of Applied Physics · doi:10.1063/1.4865735 · Cited by 20 · see citing works
Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films
Li, M., Wang, Z., Yang, L., Li, D., Yao, Q. R., Rao, G. H., Gao, X., & Zhi-dong, Z. (2017) · Physical review. B./Physical review. B · doi:10.1103/physrevb.96.075152 · Cited by 20 · see citing works
Substitution of bismuth in hot wall epitaxy of Bi2Se3on transition metals
Takagaki, Y., Jahn, U., Ramsteiner, M., & Friedland, K. ‐. (2011) · Semiconductor Science and Technology · doi:10.1088/0268-1242/26/8/085031 · Cited by 20 · see citing works
Stordeur, M. (1984) · physica status solidi (b) · doi:10.1002/pssb.2221240148 · Cited by 20 · see citing works
Buha, J., & Manna, L. (2016) · Chemistry of Materials · doi:10.1021/acs.chemmater.6b05440 · Cited by 19 · see citing works
Intercalation studies in bismuth selenide
Paraskevopoulos, K., Hatzikraniotis, E., Chrissafis, K., Zamani, M., Stoemenos, J., Economou, N. A., Alexiadis, K., & Balkanski, M. (1988) · Materials Science and Engineering B · doi:10.1016/0921-5107(88)90014-1 · Cited by 19 · see citing works
Doping-dependent charge dynamics in CuxBi2Se3
Sandilands, L. J., Reijnders, A., Kriener, M., Segawa, K., Sasaki, S., Ando, Y., & Burch, K. S. (2014) · Physical Review B · doi:10.1103/physrevb.90.094503 · Cited by 18 · see citing works
Investigating phase transition and morphology of Bi-Te thermoelectric system
Thakur, V., Upadhyay, K., Kaur, R., Goyal, N., & Gautam, S. (2020) · Materials Today Advances · doi:10.1016/j.mtadv.2020.100082 · Cited by 18 · see citing works
Electrodeposited CuSbTe thin films with enhanced thermoelectric performance
Tanwar, A., Kaur, R., Padmanathan, N., & Razeeb, K. M. (2023) · Sustainable Energy & Fuels · doi:10.1039/d3se00548h · Cited by 16 · see citing works
Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi2Se3
Li, Z., Liu, Y., White, S. C., Wahl, P., Xie, X. M., Jiang, M. H., & Lin, C. T. (2012) · Physics Procedia · doi:10.1016/j.phpro.2012.06.182 · Cited by 15 · see citing works
Superconductivity in Cu Co-Doped SrxBi2Se3 Single Crystals
Kuntsevich, A. Y., Martovitskii, V. P., Rybalchenko, G. V., Selivanov, Y. G., Bannikov, M. I., Sobolevskiy, O. A., & Chigevskii, E. G. (2019) · Materials · doi:10.3390/ma12233899 · Cited by 14 · see citing works
Unconventional superconductivity in CuxBi2Se3 from magnetic susceptibility and electrical transport
Fang, Y., You, W., & Li, M. (2020) · New Journal of Physics · doi:10.1088/1367-2630/ab7fca · Cited by 14 · see citing works
Misfit phase (BiSe)1.10NbSe2 as the origin of superconductivity in niobium-doped bismuth selenide
Kamminga, M. E., Batuk, M., Hadermann, J., & Clarke, S. J. (2020) · Communications Materials · doi:10.1038/s43246-020-00085-z · Cited by 13 · see citing works
de Jong, N., Frantzeskakis, E., Zwartsenberg, B., Huang, Y. K., Wu, D., Hlawenka, P., Sánchez‐Barriga, J., Varykhalov, A., van Heumen, E., & Golden, M. S. (2015) · Physical Review B · doi:10.1103/physrevb.92.075127 · Cited by 13 · see citing works
Observation of Coulomb repulsion between Cu intercalants in CuxBi2 Se3
Mann, C., West, D. J., Miotkowski, I., Chen, Y. P., Zhang, S., & Shih, C.-K. K. (2014) · Physical Review B · doi:10.1103/physrevb.89.155312 · Cited by 11 · see citing works
Mukherjee, B., Tarachand, T., Lakhani, A., Okram, G. S., & Kuo, Y. K. (2023) · ACS Applied Energy Materials · doi:10.1021/acsaem.3c01465 · Cited by 10 · see citing works
Possible lattice and charge order in Cu x Bi 2 Te 2 Se
Li, Y., Smith, N. P., Rexhausen, W., Schofield, M. A., & Guptasarma, P. (2019) · Journal of Physics Materials · doi:10.1088/2515-7639/ab5bfe · Cited by 10 · see citing works
Transport Properties and Plasma Resonance of Bismuth Selenide Crystals Doped with Cadmium
Horák, J., Koudelka, L., Klikorka, J., & Šiška, L. (1982) · physica status solidi (b) · doi:10.1002/pssb.2221110220 · Cited by 10 · see citing works
Self-citationTakagaki, Y., Jenichen, B., Jahn, U., Manzke, Y., Ramsteiner, M., & Friedland, K. ‐. (2013) · Semiconductor Science and Technology · doi:10.1088/0268-1242/28/2/025012 · Cited by 9 · see citing works
Point defects in Ga‐doped Bi2Se3 single crystals
Horák, J., Lošt̆ák, P., & Montaner, A. (1983) · physica status solidi (b) · doi:10.1002/pssb.2221190154 · Cited by 9 · see citing works
Self-citationCharacterization of Bi2Se3:Fe epitaxial films grown by pulsed laser deposition
Pelenovich, V., Xiao, R., Liu, Y., Liu, P., Li, M., He, Y., & Fu, D. (2015) · Thin Solid Films · doi:10.1016/j.tsf.2015.01.029 · Cited by 8 · see citing works
Raman spectroscopy of the doped topological insulator (Cu,Ni)xBi2Se3
Barcote, M. V. W., de Andrade, E., Jurelo, A. R., Monteiro, J. F. H. L., & Siqueira, E. C. (2018) · Materials Chemistry and Physics · doi:10.1016/j.matchemphys.2018.10.053 · Cited by 8 · see citing works
Precision Control of Amphoteric Doping in Cu x Bi 2 Se 3 Nanoplates
Ren, H., Zhou, J., Zhang, A., Wu, Z., Cai, J., Fu, X., Zhou, J., Wan, Z., Zhou, B., Huang, Y., et al. (2024) · Precision Chemistry · doi:10.1021/prechem.4c00046 · Cited by 7 · see citing works
Synthetic conditions and their doping effect on β-K2Bi8Se13
Kyratsi, T., Kika, I., Hatzikraniotis, E., Paraskevopoulos, K., Chrissafis, K., & Kanatzidis, M. G. (2008) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2008.06.143 · Cited by 6 · see citing works
Multi-band magnetotransport in exfoliated thin films of Cu x Bi 2 Se 3
Alexander-Webber, J., Huang, J., Beilsten‐Edmands, J., Čermák, P., Drašar, Č., Nicholas, R. J., & Coldea, A. I. (2018) · Journal of Physics Condensed Matter · doi:10.1088/1361-648x/aab193 · Cited by 5 · see citing works
Magnetotransport study of topological superconductor Cu 0.10 Bi 2 Se 3 single crystal
Li, M., Fang, Y., Zhang, J. C., Yi, H., Zhou, X., & Lin, C. T. (2018) · Journal of Physics Condensed Matter · doi:10.1088/1361-648x/aaaca1 · Cited by 4 · see citing works
Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy
Riney, L., Bunker, C., Bac, S., Wang, J., Battaglia, D., Park, Y. C., Dobrowolska, M., Furdyna, J. K., Liu, X., & Assaf, B. A. (2021) · Journal of Applied Physics · doi:10.1063/5.0039761 · Cited by 4 · see citing works
Shubnikov–de Haas Effect and Electrophysical Properties of the Topological Insulator Sb2 –xCuxTe3
Kulbachinskii, V. A., Zinoviev, D. A., Maslov, N. V., & Кытин, В. Г. (2019) · Journal of Experimental and Theoretical Physics · doi:10.1134/s1063776119050121 · Cited by 4 · see citing works
Synthesis and microstructural characterization of layered Cu–Sb–Te–based thin films
Braun, N., Kalanov, D., Rudolph, M., Владимирович, Р. В., Voß, L., Cremer, S., Bryja, H., Kienle, L., & Lotnyk, A. (2025) · Applied Surface Science Advances · doi:10.1016/j.apsadv.2025.100911 · Cited by 3 · see citing works
Gayner, C., Malik, I., Das, M. K., & Kar, K. K. (2016) · AIP conference proceedings · doi:10.1063/1.4946083 · Cited by 3 · see citing works
Tuning of physical properties through implantation mediated Cu doping in Sb2Te3 thin films
Yadav, J., Anoop, M. D., Singh, R., Yadav, N., Rao, N. S., Singh, F., & Kumar, M. (2021) · Materials Today Proceedings · doi:10.1016/j.matpr.2021.06.171 · Cited by 3 · see citing works
Li, M., Wang, Z., Shi, X., Li, T., Gao, X., & Zhi-dong, Z. (2023) · Journal of Solid State Chemistry · doi:10.1016/j.jssc.2023.124315 · Cited by 3 · see citing works
Zhou, R., Li, Z., Yang, S., Wang, X., Shen, X., Yang, L., Chen, Z., Chen, J., & Li, W. (2025) · Journal of Materials Chemistry A · doi:10.1039/d5ta06391d · Cited by 2 · see citing works
Copper migration and surface oxidation of CuxBi2Se3 in ambient pressure environments
Gross, A. L., Falling, L. J., Staab, M., Montero, M. I., Ullah, R. R., Nisson, D. M., Klavins, P., Koski, K. J., Curro, N. J., Taufour, V., et al. (2022) · Journal of Physics Materials · doi:10.1088/2515-7639/ac93b5 · Cited by 2 · see citing works
Голубков, М. В., Gorina, J. I., Kaliuzhnaia, G. A., Родин, В. В., Romanova, T. A., Sentjurina, N. N., & Черноок, С. Г. (2014) · Crystallography Reports · doi:10.1134/s1063774514050058 · Cited by 2 · see citing works
Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films
Han, D., Wang, Z., Gao, X., & Zhi-dong, Z. (2020) · Crystal Growth & Design · doi:10.1021/acs.cgd.0c01418 · Cited by 1 · see citing works
Application of holographic interferometry to the study of properties of Bi2Se3 crystals
Kaplanová, M., Synek, J., & Horák, J. (1982) · Crystal Research and Technology · doi:10.1002/crat.2170170911
Self-citationMansour, M. A. E. N., El‐Moneim, A. A., & Nakamura, K. (2017) · Key engineering materials · doi:10.4028/www.scientific.net/kem.735.205
Electronic excitations in Topological Insulators studied by Electron Energy Loss Spectroscopy
Subramanian, G. (2013) · PhDT
Chaney, J., Ramdas, V., Rodriguez, C. R., & Wu, M.-H. (1982) · Springer eBooks · doi:10.1007/978-1-4757-1499-9_15
Bismuth selenide (Bi2Se3) impurity and defects
(2005) · Springer eBooks · doi:10.1007/10681727_954
Pal, D., Sharma, B. B., Garg, N., Dan, S., Gangwar, V. K., Singh, M., Garg, A. B., Poswal, H. K., Patil, S. R., & Chatterjee, S. (2023) · Materials Science and Engineering B · doi:10.1016/j.mseb.2023.116347
Tanwar, A., Kaur, R., Padmanathan, N., & Razeeb, K. M. (2026) · Inorganic Chemistry Communications · doi:10.1016/j.inoche.2026.116627
Braun, N., Cremer, S., Bryja, H., Владимирович, Р. В., Voß, L., Kienle, L., & Lotnyk, A. (2026) · Physical Review Materials · doi:10.1103/plp4-6j6m
- Authors
- Vaško, A., Tichý, L., Horák, J., & Weissenstein, J.
- ORCID
- Tichý, L.
- Venue
- Applied Physics
- Published
- 1974-12
- Volume
- 5
- Issue
- 3
- Pages
- 217-221
- ISSN
- 0947-8396 (ISSN-L)
- 0340-3793
- 1432-0630
- OpenAlex
- W2015855374
- Cited by
- 77
- References
- 9
- Citations by year
- 2026: 2 · 2025: 2 · 2024: 1 · 2023: 5 · 2022: 3 · 2021: 6 · 2020: 4 · 2019: 4 · 2018: 3 · 2017: 2 · 2016: 4 · 2015: 3 · 2014: 7 · 2013: 3 · 2012: 5
- FWCI
- 0.00
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Applied Physics A (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Chalcogenide Semiconductor Thin Films
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Keywords
- Bi2Se3, copper doping, copper impurities, amphoteric impurities, infrared reflectivity, plasma resonance, Hall constant, effective mass, free carrier concentration, point defects, interstitial copper, donor and acceptor defects
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