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Exponential ionic drift: fast switching and low volatility of thin-film memristors
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Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Memristive devices for computing
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Self-citationMemory effects in complex materials and nanoscale systems
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Pattern classification by memristive crossbar circuits using ex situ and in situ training
Alibart, F., Zamanidoost, E., & Strukov, D. B. (2013) · Nature Communications · doi:10.1038/ncomms3072 · Cited by 642
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Metadata
- Authors
- Strukov, D. B., & Williams, R. S.
- Venue
- Applied Physics A
- Published
- 2008-11-28
- Volume
- 94
- Issue
- 3
- Pages
- 515-519
- ISSN
- 0947-8396 (ISSN-L)
- 1432-0630
- OpenAlex
- W2136811604
- Cited by
- 494
- References
- 20
- FWCI
- 19.13
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
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- Strukov, D. B., & Williams, R. S. (2009). Exponential ionic drift: fast switching and low volatility of thin-film memristors. Applied Physics A. https://doi.org/10.1007/s00339-008-4975-3
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
