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Nonvolatile Memory Elements Based on Organic Materials

Scott, J. C., Bozano, L. D.·2007·Advanced Materials
DOI 10.1002/adma.200602564
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Abstract

Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge–voltage (capacitive) or current–voltage (resistive) response. A critical summary of the proposed charge‐transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on–off ratio, on‐state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.

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Metadata

Authors
Scott, J. C., & Bozano, L. D.
Venue
Advanced Materials
Publisher
Wiley
Published
2007-05-10
Volume
19
Issue
11
Pages
1452-1463
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
DOI
10.1002/adma.200602564
OpenAlex
W2106816296
Cited by
1,001
References
2
FWCI
67.41
Type
journal article
Language
en
Open access
closed
Licence
onlinelibrary.wiley.com/termsAndConditions#vor (vor)

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Scott, J. C., & Bozano, L. D. (2007). Nonvolatile Memory Elements Based on Organic Materials. Advanced Materials. https://doi.org/10.1002/adma.200602564

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