Transistor records of excitable neurons from rat brain
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The simulated ISFET device has a pH sensitivity of about 50 mV/pH in terms of threshold voltage shift.
“A sensitivity of about 50mV/pH in terms of threshold voltage shift has been found, in agreement with literature data ([6], [9]).”
From Numerical simulation of ISFET structures for biosensing devices with TCAD tools (2015) · cites this paper as [6]
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- Authors
- Vassanelli, S., & Fromherz, P.
- Affiliations
- Max Planck Institute of Biochemistry (DE)
- ORCID
- Vassanelli, S.
- Venue
- Applied Physics A: Materials Science & Processing
- Published
- 1998-04-01
- Volume
- 66
- Issue
- 4
- Pages
- 459-463
- ISSN
- 0947-8396 (ISSN-L)
- 1432-0630
- OpenAlex
- W1966055252
- Cited by
- 74
- References
- 0
- Citations by year
- 2023: 1 · 2021: 3 · 2020: 1 · 2019: 1 · 2018: 1 · 2017: 2 · 2016: 2 · 2015: 2 · 2014: 2 · 2013: 4 · 2012: 6
- FWCI
- 1.19
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Applied Physics A (publishedVersion)
- Padua Research Archive (University of Padova) (submittedVersion)
- Topics
- Life Sciences › Neuroscience › Cellular and Molecular Neuroscience › Neuroscience and Neural Engineering
- Physical Sciences › Chemical Engineering › Bioengineering › Analytical Chemistry and Sensors
- Physical Sciences › Engineering › Biomedical Engineering › Analog and Mixed-Signal Circuit Design
- Keywords
- field-effect transistors, excitable neurons, action potential, voltage-gated sodium channels, voltage-gated potassium channels, cultured neurons, oxidized silicon, signal averaging
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