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Applied Physics Letters
Abstract
In this study we report the V/III ratio effects on growth, structural, optical and doping characteristics of low growth rate (∼1 Å/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown InxAl1−xAs layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the V/III ratio with fixed metalorganic precursor flow is a crucial parameter on InxAl1−xAs layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping.
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Metadata
- Venue
- Metal Powder Report
- Published
- 1994-02
- Volume
- 49
- Issue
- 2
- Pages
- 43
- ISSN
- 0026-0657 (ISSN-L)
- OpenAlex
- W4235250917
- Cited by
- 1,986
- References
- 0
- FWCI
- 4.15
- Type
- journal article
- Language
- en
- Open access
- closed
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