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Growth of GaN by ECR-assisted MBE
Open accessAbstract
High-quality GaN films have been grown on a variety of substrates by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-MBE). The films were grown in two steps. First, a GaN-buffer was grown at low temperature and then the rest of the film was grown at higher temperatures. We found that this method of growth leads to a relatively small two-dimensional nucleation rate (∼20 nuclei/μm2 h) and high lateral growth rate (100 times faster than the vertical growth rate). This type of quasi-layer-by-layer growth results in a smooth surface morphology to within 100 Å. Growth on Si(1 0 0) leads to single-crystalline GaN films having the zinc-blende structure. Growth on Si(1 1 1) leads to GaN films having the wurtzitic structure with a large concentration of stacking faults. The crystallographic orientation and the surface morphology of GaN films on sapphire depends on the orientation of sapphire. To this date, the best films were grown on the basal plane of sapphire.
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Khan, M. A., Van Hove, J. M., Kuznia, J. N., & Olson, D. T. (1991) · Applied Physics Letters · doi:10.1063/1.104886 · Cited by 182
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Growth of Group III Nitrides. A Review of Precursors and Techniques
Neumayer, D. A., & Ekerdt, J. G. (1996) · Chemistry of Materials · doi:10.1021/cm950108r · Cited by 313
Patsalas, P., Kalfagiannis, N., Kassavetis, S., Abadias, G., Bellas, D. V., Lekka, C., & Lidorikis, E. (2018) · Materials Science and Engineering: R: Reports · doi:10.1016/j.mser.2017.11.001 · Cited by 265
A global (volume averaged) model of a nitrogen discharge: I. Steady state
Thorsteinsson, E. G., & Gudmundsson, J. T. (2009) · Plasma Sources Science and Technology · doi:10.1088/0963-0252/18/4/045001 · Cited by 132
Metadata
- Authors
- Moustakas, T. D., Lei, T., & Molnar, R. J.
- Venue
- Physica B: Condensed Matter
- Publisher
- Elsevier BV
- Published
- 1993-04
- Volume
- 185
- Issue
- 1-4
- Pages
- 36-49
- ISSN
- 0921-4526 (ISSN-L)
- OpenAlex
- W2060125404
- Cited by
- 238
- References
- 1
- FWCI
- 9.66
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Moustakas, T. D., Lei, T., & Molnar, R. J. (1993). Growth of GaN by ECR-assisted MBE. Physica B: Condensed Matter. https://doi.org/10.1016/0921-4526(93)90213-p
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
