Molecular excitation and relaxation of extreme ultraviolet lithography photoresists

Ogletree, D. Frank

doi:10.1016/b978-0-08-100354-1.00002-8

Cited by 32Advancements in Photolithography TechniquesElectron and X-Ray Spectroscopy TechniquesAtomic and Molecular Physics

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Molecular excitation and relaxation of extreme ultraviolet lithography photoresists

Ogletree, D. Frank·2016·Frontiers of Nanoscience

DOI 10.1016/b978-0-08-100354-1.00002-8

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Authors: Ogletree, D. F.
Affiliations: Lawrence Berkeley National Laboratory (US)
Corresponding author: Ogletree, D. Frank
ORCID: Ogletree, D. Frank
Venue: Frontiers of Nanoscience
Publisher: Elsevier
Published: 2016
Pages: 91-113
ISSN: 1876-276X (ISSN-L)
1876-2778
DOI: 10.1016/b978-0-08-100354-1.00002-8
OpenAlex: W2560821961
Cited by: 32
References: 65
Citations by year: 2026: 1 · 2025: 7 · 2024: 5 · 2023: 5 · 2022: 2 · 2021: 2 · 2020: 4 · 2019: 2 · 2018: 1 · 2017: 3
FWCI: 6.31
Type: book chapter
Language: en
Open access: closed
Licence: www.elsevier.com/tdm/userlicense/1.0/ (tdm)
Locations: Frontiers of nanoscience (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
Physical Sciences › Materials Science › Surfaces, Coatings and Films › Electron and X-Ray Spectroscopy Techniques
Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Atomic and Molecular Physics
Keywords: EUV lithography, photoresist, molecular excitation, molecular relaxation, photoionization, X-ray absorption cross section, secondary electron emission, radical formation, radical ions, radiation chemistry, resist sensitivity

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