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Radiation Chemistry in Chemically Amplified Resists
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Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.
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The cascade of secondary electrons leads to chemical reactions when using EUV radiation.
“This cascade of secondary electrons leads to chemical reactions when using EUV radiation.”
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Self-citationComparison of acid-generating efficiencies in 248 and 193-nm photoresists
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Development of laser-synchronized picosecond pulse radiolysis system
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Self-citationNucleophilic effects on the deprotonation of phenol radical cations
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Film Quantum Yields of Ultrahigh PAG EUV Photoresists
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Evidence for two electron states in solvation and scavenging processes in alcohols
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Formation of Intramolecular Poly(4-hydroxystyrene) Dimer Radical Cation
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Self-citationEffects of Ester Groups on Proton Generation and Diffusion in Polymethacrylate Matrices
Nakano, A., Okamoto, K., Kozawa, T., et al. (2004) · Japanese Journal of Applied Physics · doi:10.1143/jjap.43.3981 · Cited by 29
Self-citationThermal and Photo-Induced Reactions of Polymer Radicals in γ-Irradiated Poly(alkyl methacrylate)
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Kozawa, T., & Tagawa, S. (2009) · Applied Physics Express · doi:10.1143/apex.2.056503 · Cited by 29
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Study on acid generation from polymer
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Self-citationPhotoresist film thickness for extreme ultraviolet lithography
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Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
Kozawa, T., Tagawa, S., Santillan, J. J., et al. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.4465 · Cited by 28
Self-citationIonic species in irradiated poly(methyl methacrylate). A pulse radiolysis and ESR study
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Simple method for measuring acid generation quantum efficiency at 193 nm
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Kozawa, T., Okamoto, K., Saeki, A., et al. (2009) · Japanese Journal of Applied Physics · doi:10.1143/jjap.48.056508 · Cited by 27
Self-citationComputer Simulation of the Ion Escape from High-Energy Electron Tracks in Nonpolar Liquids
Siebbeles, L. D. A., Bartczak, W. M., Terrissol, M., et al. (1997) · The Journal of Physical Chemistry A · doi:10.1021/jp962166l · Cited by 27
Performance of molecular resist based on polyphenol in EUV lithography
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Evaluation of New Molecular Resist for EUV Lithography
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Synchronization of femtosecond UV-IR laser with electron beam for pulse radiolysis studies
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Self-citationA description of random walks with collision anisotropy and with a nonconstant mean free path
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Reaction mechanism of fluorinated chemically amplified resists
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Self-citationHigh-Absorption Resist Process for Extreme Ultraviolet Lithography
Kozawa, T., & Tagawa, S. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.8354 · Cited by 25
Self-citationRyan, J. M., Hoole, A. C. F., & Broers, A. N. (1995) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.588317 · Cited by 24
Studies on Reaction Mechanisms of EB Resist by Pulse Radiolysis.
Tsuji, S., Kozawa, T., Yamamoto, Y., et al. (2000) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.13.733 · Cited by 24
Self-citationRassolov, V. A., & Mozumder, A. (2001) · The Journal of Physical Chemistry B · doi:10.1021/jp0032661 · Cited by 24
Hirose, R., Kozawa, T., Tagawa, S., Shimizu, D., Kai, T., & Shimokawa, T. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.7125 · Cited by 23
Self-citationKozawa, T., & Tagawa, S. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.8328 · Cited by 23
Self-citationVery high voltage (500 kV) electron beam lithography for thick resists and high resolution
Jones, G. A. C., Blythe, S., & Ahmed, H. (1987) · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · doi:10.1116/1.583844 · Cited by 22
A Standard Addition Technique To Quantify Photoacid Generation in Chemically Amplified Photoresist
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Main chain scission reaction of poly(methyl methacrylate) caused by two‐photon ionization of dopant
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Kozawa, T., & Tagawa, S. (2008) · Applied Physics Express · doi:10.1143/apex.1.107001 · Cited by 22
Self-citationPhotochemical and photophysical studies on chemically amplified resists.
Hacker, N. P., Hofer, D. C., & Welsh, K. M. (1992) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.5.35 · Cited by 22
Study of the Reaction of Acid Generators with Epithermal and Thermalized Electrons
Natsuda, K., Kozawa, T., Saeki, A., et al. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.4932 · Cited by 21
Self-citationToriumi, M., Santillan, J. J., Itani, T., et al. (2007) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2787850 · Cited by 21
Effect of polymer molecular weight on AFM polymer aggregate size and LER of EUV resists
Cutler, C. A., Mackevich, J. F., Li, J., et al. (2003) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.482370 · Cited by 21
A Resist Material Study for LWR and Resolution Improvement in EUV Lithography
Yamashita, K., Kamimura, S., Takahashi, H., et al. (2008) · Journal of Photopolymer Science and Technology · doi:10.2494/photopolymer.21.439 · Cited by 21
Kozawa, T., Tagawa, S., & Shell, M. K. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.6288 · Cited by 20
Self-citationKozawa, T., Okamoto, K., Saeki, A., et al. (2005) · Japanese Journal of Applied Physics · doi:10.1143/jjap.44.3908 · Cited by 20
Self-citationSaeki, A., Kozawa, T., & Tagawa, S. (2005) · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · doi:10.1016/j.nima.2005.10.068 · Cited by 20
Self-citationEffect of Coulomb interaction and pKa on acid diffusion in chemically amplified resists
Shi, X. (1999) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.590562 · Cited by 20
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Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
Kozawa, T., Tagawa, S., Santillan, J. J., et al. (2008) · Japanese Journal of Applied Physics · doi:10.1143/jjap.47.5404 · Cited by 19
Self-citationMeasurements of acid generation by extreme ultraviolet irradiation in lithographic films
Glodde, M., Goldfarb, D. L., Medeiros, D. R., Wallraff, G. M., & Denbeaux, G. P. (2007) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2779045 · Cited by 19
Reaction Mechanisms of Brominated Chemically Amplified Resists
Yamamoto, H., Kozawa, T., Nakano, A., et al. (2005) · Japanese Journal of Applied Physics · doi:10.1143/jjap.44.l842 · Cited by 18
Self-citationSaeki, A., Kozawa, T., Tagawa, S., et al. (2006) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2393250 · Cited by 18
Self-citationFree-Ion Yield and Electron Mobility in Liquid Hydrocarbons: A Consistent Correlation
Mozumder, A. (2002) · The Journal of Physical Chemistry A · doi:10.1021/jp021268a · Cited by 17
Shigaki, T., Okamoto, K., Kozawa, T., et al. (2006) · Japanese Journal of Applied Physics · doi:10.1143/jjap.45.5735 · Cited by 17
Self-citationMasuda, S., Kawanishi, Y., Hirano, S., et al. (2006) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.656238 · Cited by 17
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Cidnp study on porphyrin-photosensitized reactions with phenol and quinone
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Theoretical Study of W Values in Hydrocarbon Gases
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Furukawa, K., Kozawa, T., Seki, S., et al. (2008) · Applied Physics Express · doi:10.1143/apex.1.067001 · Cited by 15
Self-citationEffect of Acid Diffusion and Polymer Structure on Line Edge Roughness
Yamamoto, H., Kozawa, T., Saeki, A., Okamoto, K., Tagawa, S., Ohmori, K., Satô, M., & Komano, H. (2007) · Japanese Journal of Applied Physics · doi:10.1143/jjap.46.6187 · Cited by 15
Self-citationNakano, A., Okamoto, K., Yamamoto, Y., et al. (2005) · Japanese Journal of Applied Physics · doi:10.1143/jjap.44.5832 · Cited by 15
Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
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Self-citationMulti spur effect on decay kinetics of geminate ion recombination using Monte Carlo technique
Saeki, A., Kozawa, T., Yoshida, Y., et al. (2005) · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · doi:10.1016/j.nimb.2005.02.002 · Cited by 14
Self-citationPulse radiolysis study of polymerization of vinylcarbazole in benzonitrile solutions
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Self-citationSensitivity Characteristics of Positive and Negative Resists at 200 kV Electron-Beam Lithography
Kim, B., Lee, H., Wi, J., et al. (2004) · Japanese Journal of Applied Physics · doi:10.1143/jjap.44.l95 · Cited by 14
Photon W-value for Ar in the sub-keV X-ray region
Saitô, N., & Suzuki, I. (2001) · Radiation Physics and Chemistry · doi:10.1016/s0969-806x(00)00364-9 · Cited by 14
Computer simulation of electron scavenging in multipair spurs in dielectric liquids
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Investigating Line-Edge Roughness in Calixarene Fine Patterns Using Fourier Analysis
Ishida, M., Kobayashi, K., Fujita, J., et al. (2002) · Japanese Journal of Applied Physics · doi:10.1143/jjap.41.4228 · Cited by 14
Effect of Inner-shell Excitations on the W-Value of Propane
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Selective anodic oxidation of p-alkylaryl ethers—pathways and products
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Metadata
- Authors
- Kozawa, T., & Tagawa, S.
- Affiliations
- The Institute of Scientific and Industrial Research, The University of Osaka (JP)
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2010-03-01
- Volume
- 49
- Issue
- 3R
- Pages
- 030001
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2027253590
- Cited by
- 360
- References
- 221
- Citations by year
- 2026: 23 · 2025: 31 · 2024: 38 · 2023: 22 · 2022: 21 · 2021: 17 · 2020: 12 · 2019: 18 · 2018: 16 · 2017: 16 · 2016: 31 · 2015: 24 · 2014: 27 · 2013: 21 · 2012: 14
- FWCI
- 16.14
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Japanese Journal of Applied Physics (publishedVersion)
- Funders
- Japan Society for the Promotion of Science (21656238)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Chemistry › Organic Chemistry › Photopolymerization techniques and applications
- Physical Sciences › Materials Science › Polymers and Plastics › Synthesis and properties of polymers
- Keywords
- radiation chemistry, chemically amplified resists, EUV lithography, proton migration, energy deposition, ionizing radiation, KrF lithography, ArF immersion lithography, semiconductor manufacturing
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