Cited by 360Advancements in Photolithography TechniquesPhotopolymerization techniques and applicationsSynthesis and properties of polymers

The DOI matches its Crossref record; 221 of the 221 references it cites were found in a registry or an index.

Radiation Chemistry in Chemically Amplified Resists

Open access
Kozawa, Takahiro, Tagawa, Seiichi·2010·Japanese Journal of Applied Physics

Abstract

Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.

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Crossref · 10.1143/jjap.49.030001

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  • The cascade of secondary electrons leads to chemical reactions when using EUV radiation.

    “This cascade of secondary electrons leads to chemical reactions when using EUV radiation.”

    From Extreme ultraviolet lithography (2024) · cites this paper as [57]

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Citations

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Research works printed but not linked: 6

  1. 1989, Polym. Mater. Sci. Eng., 61, 269
  2. 1987, Int. J. Radiat. Appl. Instrum., Part C, 30, 83
  3. 1990, Int. J. Radiat. Appl. Instrum., Part C, 36, 195
  4. 1989, Int. J. Radiat. Appl. Instrum., Part C, 34, 145
  5. 1989, Int. J. Radiat. Appl. Instrum., Part C, 34, 553
  6. 1963, J. Polym. Sci., Part A, 1, 1079

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Metadata

Authors
Kozawa, T., & Tagawa, S.
Affiliations
The Institute of Scientific and Industrial Research, The University of Osaka (JP)
Venue
Japanese Journal of Applied Physics
Published
2010-03-01
Volume
49
Issue
3R
Pages
030001
ISSN
  • 0021-4922 (ISSN-L)
  • 1347-4065
OpenAlex
W2027253590
Cited by
360
References
221
Citations by year
2026: 23 · 2025: 31 · 2024: 38 · 2023: 22 · 2022: 21 · 2021: 17 · 2020: 12 · 2019: 18 · 2018: 16 · 2017: 16 · 2016: 31 · 2015: 24 · 2014: 27 · 2013: 21 · 2012: 14
FWCI
16.14
Type
journal article
Language
en
Open access
Locations
Japanese Journal of Applied Physics (publishedVersion)
Funders
Japan Society for the Promotion of Science (21656238)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Chemistry › Organic Chemistry › Photopolymerization techniques and applications
  • Physical Sciences › Materials Science › Polymers and Plastics › Synthesis and properties of polymers
Keywords
radiation chemistry, chemically amplified resists, EUV lithography, proton migration, energy deposition, ionizing radiation, KrF lithography, ArF immersion lithography, semiconductor manufacturing

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