Optical lithography—present and future challenges
Open accessAbstract
Optical lithography has been an industrial workhorse for many decades. It has reached a wavelength of 193 nm, a Numerical Aperture (NA) of 0.93 but was facing difficulties to advance further until the debut of immersion lithography. This review deals with the limit of dry and immersion lithography systems, their present and future challenges to reach these very limits. A discussion of defects in immersion lithography, the status of immersion lithography, polarized illumination, high-index materials, solid-immersion mask, double exposure and double patterning is included.
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Cites
Immersion lithography at 157 nm
Switkes, M., & Rothschild, M. (2001) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.1412895 · Cited by 119 · see citing works
Immersion lithography and its impact on semiconductor manufacturing
Lin, B. J. (2004) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.1756917 · Cited by 92 · see citing works
Self-citationLin, B. J. (2002) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.1445798 · Cited by 50 · see citing works
Self-citationLin, B. J. (1986) · SPIE Proceedings · doi:10.1117/12.963701 · Cited by 40 · see citing works
Self-citationImmersion lithography and its impact on semiconductor manufacturing
Lin, B.-J. (2004) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.534507 · Cited by 26 · see citing works
Self-citationResolution enhancement of 157 nm lithography by liquid immersion
Switkes, M., & Rothschild, M. (2002) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.1502260 · Cited by 25 · see citing works
Resolution enhancement of 157-nm lithography by liquid immersion
Switkes, M., & Rothschild, M. (2002) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.474568 · Cited by 22 · see citing works
Double exposure for the contact layer of the 65-nm node
Owe-Yang, D.-C., Yu, S.-S., Chen, H., et al. (2005) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.599651 · Cited by 17 · see citing works
Second generation fluids for 193 nm immersion lithography
Peng, S., French, R. H., Qiu, W., et al. (2005) · Optical Microlithography XVIII · doi:10.1117/12.606448 · Cited by 16 · see citing works
Full-field exposure tools for immersion lithography
Owa, S., Nagasaka, H., Ishii, Y., et al. (2005) · Optical Microlithography XVIII · doi:10.1117/12.599352 · Cited by 16 · see citing works
Characterization of ArF immersion process for production
Chen, J.-H., Chen, L.-J., Fang, T.-Y., et al. (2005) · Optical Microlithography XVIII · doi:10.1117/12.602025 · Cited by 10 · see citing works
Depth of focus in multilayered media-a long-neglected phenomenon aroused by immersion lithography
Lin, B. J. (2004) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.1637591 · Cited by 9 · see citing works
Self-citationDefect reduction with special routing for immersion lithography
Liang, F.-J., Shiu, L.-H., Chen, C.-K., et al. (2007) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.2718941 · Cited by 3 · see citing works
Flagged first, then by citations
Research works printed but not linked: 2
- B.J. Lin, Quarter-and sub-quarter micrometer optical lithography, in: Proceedings of the Symposia on Patterning Science and Technology II, ECS 92 (6) (1991) 3.
- Y. Inui, et al., Fluoride single crystals grown by the CZ method, in: 2nd International Symposium on Immersion Lithography, Bruges, Belgium, September 2005.
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
- Authors
- Lin, B. J.
- Affiliations
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
- Corresponding author
- Lin, Burn J.
- ORCID
- Lin, Burn J.
- Venue
- Comptes Rendus. Physique
- Publisher
- MathDoc/Centre Mersenne
- Published
- 2006-10-01
- Volume
- 7
- Issue
- 8
- Pages
- 858-874
- ISSN
- 1631-0705 (ISSN-L)
- 1878-1535
- OpenAlex
- W2042489539
- Cited by
- 63
- References
- 13
- Citations by year
- 2026: 1 · 2025: 4 · 2024: 2 · 2023: 3 · 2022: 2 · 2021: 4 · 2020: 3 · 2019: 1 · 2017: 1 · 2016: 6 · 2014: 5 · 2013: 5 · 2012: 5
- FWCI
- 3.37
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Comptes Rendus Physique (publishedVersion)
- Physical Reports (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
- Physical Sciences › Engineering › Biomedical Engineering › Nanofabrication and Lithography Techniques
- Keywords
- photolithography, immersion lithography, 193 nm lithography, numerical aperture, polarized illumination, high-index materials, solid immersion lens, double exposure, double patterning
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