Cited by 40Advancements in Photolithography TechniquesAdvanced optical system designAdvanced X-ray Imaging Techniques

Where Is The Lost Resolution?

Lin, Burn J.·1986·SPIE Proceedings

Abstract

In addition to raising the numerical aperture of the imaging lens or reducing the exposing wavelength to improve resolution in optical lithography, a third direction is pursued, namely restoration of the potential resolution capability that is lost due to incorrect practice. Unlike the former two methods, a gain in depth of focus can accompany improvement in resolution. In this paper, elimination of vibration between the mask and the wafer, resist contrast improvement, and multilayer resist systems are cited as possible means for improvement. Simulation study are given on the effects of vibration and resist contrast improvement to quantitatively assess the improvements.

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Crossref · 10.1117/12.963701

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  • The resolution of a lithographic system is governed by the Rayleigh or Abbe formula.

    “The resolution of a lithographic system is governed by the Rayleigh 3 or Abbe 4 formula”

    From Extreme ultraviolet lithography (2024) · cites this paper as [3]

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Authors
Lin, B. J.
Affiliations
IBM (United States) (US)
Corresponding author
Lin, Burn J.
Venue
SPIE Proceedings
Publisher
SPIE
Published
1986-08-20
Volume
0633
Pages
44
ISSN
0277-786X (ISSN-L)
OpenAlex
W2012124880
Cited by
40
References
0
Citations by year
2026: 3 · 2025: 4 · 2024: 4 · 2023: 2 · 2022: 1 · 2021: 2 · 2020: 2 · 2019: 4 · 2018: 1 · 2017: 1 · 2015: 2 · 2014: 3 · 2012: 1
FWCI
0.00
Type
conference paper
Language
en
Open access
closed
Locations
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
  • Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
Keywords
photolithography, resolution, depth of focus, vibration suppression, resist contrast, multilayer resist, numerical aperture, wavelength reduction, lithography simulation

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