Cited by 27Electronic and Structural Properties of OxidesElectrical and Thermal Properties of MaterialsMagnetic and transport properties of perovskites and related materials

Deposition of Highly Oriented Lanthanum Nickel Oxide Thin Film on Silicon Wafer by CSD

Suzuki, H., Naoe, T., Miyazaki, H., Ota, T.·2007·Journal of the European Ceramic Society

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Crossref · 10.1016/j.jeurceramsoc.2007.02.026

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  • Interplanar distances 2.43 and 1.46 Å may indicate presence of residual amount of NiO, while 3.27 and 1.68 Å correspond to La2O3 often observed in LNO films obtained by CSD.

    “Interplanar distances of 2.43 Å and 1.46 Å may indicate the presence of a residual amount of NiO (s.g. Fm3¯m, ICSD ID 9866, d = 2.43 and 1.49 Å), while 3.27 Å and 1.68 Å correspond to La2O3 (s.g. Ia3¯, PDF 00-022-0369, d= 3.27, 1.70, 1.66 Å), often observed in LNO films obtained by CSD [15,57,58].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [57]

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Authors
Suzuki, H., Naoe, T., Miyazaki, H., & Ota, T.
Affiliations
  • Shizuoka University (JP)
  • Shimane University (JP)
  • Nagoya Institute of Technology (JP)
Corresponding author
Suzuki, H.
Venue
Journal of the European Ceramic Society
Publisher
Elsevier BV
Published
2007-01
Volume
27
Issue
13-15
Pages
3769-3773
ISSN
0955-2219 (ISSN-L)
OpenAlex
W2020290457
Cited by
27
References
0
Citations by year
2025: 1 · 2023: 1 · 2022: 1 · 2019: 2 · 2017: 1 · 2016: 2 · 2015: 1 · 2014: 2 · 2013: 4 · 2012: 3
FWCI
0.92
Type
journal article
Language
en
Open access
closed
Locations
Journal of the European Ceramic Society (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrical and Thermal Properties of Materials
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
Keywords
lanthanum nickel oxide, LaNiO3 thin films, chemical solution deposition, spin coating, annealing temperature, mixed solvents, 2-methoxyethanol, monoethanolamine, electrical resistivity, film density

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