The DOI matches its Crossref record; 56 of the 56 references it cites were found in a registry or an index.
Directed self-assembly of block copolymers for next generation nanolithography
Open accessAbstract
Directed self-assembly of block copolymers has received a great deal of research attention as a promising nanolithography to complement the intrinsic limitations of conventional photolithography. In this review, we highlight the recent progress in the development of the directed self-assembly process for practical utilization in semiconductor applications. Various advanced directed self-assembly approaches are examined, in which block copolymer self-assembly is synergistically integrated with conventional photolithography, such as ArF lithography or I-line lithography, via either epitaxial self-assembly or the graphoepitaxy principle. We focus on the practical advantages anticipated from directed self-assembly integration, such as pattern density multiplication, feature size uniformity improvement, line edge roughness reduction, as well as cost reduction. Additionally, a direction for future research on directed self-assembly is suggested with diverse potential applications.
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Cites
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Cited by
Evolution of patterning materials towards the Moore’s Law 2.0 Era
Goldfarb, D. L. (2022) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/ac5534 · Cited by 47
Metadata
- Authors
- Jeong, S.-J., Kim, J. Y., Kim, B. H., Moon, H.-S., & Kim, S. O.
- Venue
- Materials Today
- Publisher
- Elsevier BV
- Published
- 2013-12
- Volume
- 16
- Issue
- 12
- Pages
- 468-476
- ISSN
- 1369-7021 (ISSN-L)
- OpenAlex
- W1992342771
- Cited by
- 306
- References
- 56
- FWCI
- 10.66
- Type
- journal article
- Language
- en
- Open access
- hybrid
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