CoChat
Sign Up
Cited by 56Electronic Packaging and Soldering TechnologiesCopper Interconnects and Reliability3D IC and TSV technologies

The DOI matches its Crossref record.

Investigation of growth behavior of Al–Cu intermetallic compounds in Cu wire bonding

Chen, Jiunn, Lai, Yi-Shao, Wang, Yi-Wun, Kao, C.R.·2011·Microelectronics Reliability
DOI 10.1016/j.microrel.2010.09.034
Open this paper in CoChat — free account

Overview

Integrity signals

Registry

Crossref · 10.1016/j.microrel.2010.09.034

Cites

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Citations

Cites

No references could be resolved yet.

Research works printed but not linked: 50

  1. Breach, 2010, A brief review of selected aspects of the materials science of ball bonding, Microelectron Reliab, 50, 1, 10.1016/j.microrel.2009.08.003 · DOI
  2. Toyozawa, 1990, Development of copper wire bonding application technology, IEEE Trans Compon Hybrids Manuf Technol, 13, 667, 10.1109/33.62577 · DOI
  3. Khoury, 1990, A comparison of copper and gold wire bonding on integrated circuit devices, IEEE Trans Compon Hybrids Manuf Technol, 13, 673, 10.1109/33.62578 · DOI
  4. Tan J, Toh BH, Ho HM. Modelling of free air ball for copper wire bonding. In: Proceedings of the 6th electronics packaging technology conference, Singapore; 2004. p. 711–7. · DOI
  5. Hang C, Wang C, Shi M, Wu X, Wang H. Study of copper free air ball in thermosonic copper ball bonding. Proceedings of 6th international conference on electronic packaging technology. Shanghai, China; 2005. p. 414–8.
  6. Ho HM, Tan J, Tan YC, Toh BH, Xavier P. Modeling energy transfer to copper wire for bonding in an inert environment. Proceedings of 7th electronics packaging technology conference. Singapore; 2005. p. 292–7.
  7. Kaimori, 2006, The development of Cu bonding wire with oxidation-resistant metal coating, IEEE Trans Adv Packag, 29, 227, 10.1109/TADVP.2006.872999 · DOI
  8. Xu H, Liu C, Silberschmidt VV, Wang H. Effects of process parameters on bondability in thermosonic copper ball bonding. In: Proceedings of 58th electronic components and technology conference. Lake Buena Vista, FL, USA; 2008. p. 1424–30. · DOI
  9. Yow KY, Eu PL. Focused heat treatment after bonding for Cu wire bond reliability improvement. In: Proceedings of. 10th electronics packaging technology conference. Singapore; 2008. p. 965–70.
  10. Uno T, Terashima S, Yamada T. Surface-enhanced copper bonding wire for LSI. In: Proceedings of 59th electronic components and technology conference. San Diego, CA, USA; 2009. p. 1486–95. · DOI
  11. Nguyen, 1995, Optimization of copper wire bonding on Al–Cu metallization, IEEE Trans Compon Packag Manuf Technol – Part A, 18, 423, 10.1109/95.390327 · DOI
  12. Pequegnat, 2009, Effect of EFO parameters on Cu FAB hardness and work hardening in thermosonic wire bonding, J Mater Sci: Mater Electron, 20, 1144, 10.1007/s10854-008-9841-8 · DOI
  13. Hang, 2009, Effect of electronic flame off parameters on copper bonding wire: free-air ball deformability, heat affected zone length, heat affected zone breaking force, Microelectron Eng, 86, 2094, 10.1016/j.mee.2009.01.085 · DOI
  14. Shah, 2008, In situ ultrasonic force signals during low-temperature thermosonic copper wire bonding, Microelectron Eng, 85, 1851, 10.1016/j.mee.2008.05.035 · DOI
  15. Livelo E, Ansay IC. Cu bumping characterization of bond pad and underlying structures and its impact to cratering. In: Proceedings of 10th electronics packaging technology conference. Singapore; 2008. p. 1321–1327. · DOI
  16. Srikanth N, Premkumar J, Sivakumar M, Wong YM, Vath III CJ. Effect of wire purity on copper wire bonding. In: Proceedings of 9th electronics packaging technology conference. Singapore; 2007. p. 755–9. · DOI
  17. Premkumar J, Kumar BS, Madhu M, Sivakumar M, Song KYJ, Wong YM. Key factors in Cu wire bonding reliability: remnant aluminum and Cu/Al IMC thickness. In: Proceedings of 10th electronics packaging technology conference, Singapore; 2008. p. 971–5. · DOI
  18. Onuki, 1987, Investigation of the reliability of copper ball bonds to aluminum electrodes, IEEE Trans Compon Hybrids Manuf Technol, 12, 550, 10.1109/TCHMT.1987.1134799 · DOI
  19. Murali, 2003, An analysis of intermetallics formation of gold and copper ball bonding on thermal aging, Mater Res Bull, 38, 637, 10.1016/S0025-5408(03)00004-7 · DOI
  20. Kim, 2003, Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability, IEEE Trans Compon Packag Technol, 26, 367, 10.1109/TCAPT.2003.815121 · DOI
  21. Murali, 2004, Effect of wire size on the formation of intermetallics and Kirkendall voids on thermal aging of thermosonic wire bonds, Mater Lett, 58, 3096, 10.1016/j.matlet.2004.05.070 · DOI
  22. Wulff FW, Breach CD, Stephan D, Saraswati, Dittmer KJ. Characterization of intermetallic growth in copper and gold ball bonds on aluminum metallization. In: Proceedings of 6th electronics packaging technology conference. Singapore; 2004. p. 348–53. · DOI
  23. Hong S, Hang C, Wang C. Experimental research of copper wire ball bonding. Proceedings of 6th international conference on electronic packaging technology. Shanghai, China; 2005. p. 441–5
  24. Murali, 2006, Effect of wire diameter on the thermosonic bond reliability, Microelectron Reliab, 46, 467, 10.1016/j.microrel.2005.05.011 · DOI
  25. Ratchev, 2006, Mechanical reliability of Au and Cu wire bonds to Al, Ni/Au and Ni/Pd/Au capped Cu bond pads, Microelectron Reliab, 46, 1315, 10.1016/j.microrel.2005.11.002 · DOI
  26. Murali, 2006, An evaluation of gold and copper wire bonds on shear and pull testing, J Electron Packag, 128, 192, 10.1115/1.2229214 · DOI
  27. Pan QH, Tan HB, Yang WP, Dai XZ, Anderson H, Quah J. Introduction to fine copper wire development. In: Proceedings of 31st international conference on electronics manufacturing and technology. Kuala Lumpur, Malaysia; 2006. p. 376–80 · DOI
  28. England L, Jiang T. Reliability of Cu wire bonding to Al metallization. In: Proceedings of 57th electronic components and technology conference. Reno, NV, USA; 2007. p. 1604–13. · DOI
  29. Yeoh LS. Characterization of intermetallic growth for gold bonding and copper bonding on aluminum metallization in power transistors. In: Proceedings of 9th electronics packaging technology conference. Singapore; 2007. p. 731–6. · DOI
  30. Hang, 2008, Growth behavior of Cu/Al intermetallic compounds and cracks in copper ball bonds during isothermal aging, Microelectron Reliab, 48, 416, 10.1016/j.microrel.2007.06.008 · DOI
  31. Drozdov, 2008, Detailed investigation of ultrasonic Al–Cu wire-bonds: I. Intermetallic formation in the as-bonded state, J Mater Sci, 43, 6029, 10.1007/s10853-008-2954-x · DOI
  32. Drozdov, 2008, Detailed investigation of ultrasonic Al–Cu wire-bonds: II. Microstructural evolution during annealing, J Mater Sci, 43, 6038, 10.1007/s10853-008-2955-9 · DOI
  33. Xu, 2009, A re-examination of the mechanism of thermosonic copper ball bonding on aluminium metallization pads, Scripta Mater, 61, 165, 10.1016/j.scriptamat.2009.03.034 · DOI
  34. Xu, 2010, Growth of intermetallic compounds in thermosonic copper wire bonding on aluminum metallization, J Elect Mater, 39, 124, 10.1007/s11664-009-0951-8 · DOI · Paper page
  35. Caers JFJM, Bischoff A, Falk J, Roggen J. Conditions for reliable ball-wedge copper wire bonding. In: Proceedings of 1993 Japan international electronic manufacturing technology symposium. Kanazawa, Japan; 1993. p. 312–5 · DOI
  36. Tan, 2002, Corrosion study at Cu–Al interface in microelectronics packaging, Appl Surf Sci, 191, 67, 10.1016/S0169-4332(02)00150-2 · DOI
  37. Hang, 2008, Microstructural study of copper free air balls in thermosonic wire bonding, Microelectron Eng, 85, 1815, 10.1016/j.mee.2008.05.010 · DOI
  38. Hentzell, 1983, Interdiffusion in copper–aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation, J Appl Phys, 54, 6923, 10.1063/1.331999 · DOI
  39. Hamm, 1984, A study of the initial growth kinetics of the copper–aluminum thin-film interface reaction by in-situ x-ray diffraction and Rutherford backscattering analysis, J Appl Phys, 56, 293, 10.1063/1.333960 · DOI
  40. Wolverton, 2001, Entropically favored ordering: the metallurgy of Al2Cu revisited, Phys Rev Lett, 86, 5518, 10.1103/PhysRevLett.86.5518 · DOI
  41. Westman, 1965, Refinement of the gamma-Cu9Al4 structure, Acta Chem Scand, 19, 1411, 10.3891/acta.chem.scand.19-1411 · DOI
  42. Heidenstam, 1968, A redetermination of the distribution of atoms in Cu5Zn8, Cu5Cd8, and Cu9Al4, Acta Chem Scand, 22, 653, 10.3891/acta.chem.scand.22-0653 · DOI
  43. Lee, 2006, First-principles calculations of structural and mechanical properties of Cu6Sn5, Appl Phys Lett, 88, 031913, 10.1063/1.2165280 · DOI
  44. Chen, 2008, First-principles calculations of elastic properties of Cu3Sn superstructure, Appl Phys Lett, 92, 081901, 10.1063/1.2884685 · DOI
  45. Chen, 2009, Structural and elastic properties of Cu6Sn5 and Cu3Sn from first-principles calculations, J Mater Res, 24, 2361, 10.1557/jmr.2009.0273 · DOI
  46. Zhou, 2008, Structural, elastic and electronic properties of Al–Cu intermetallics from first-principles calculations, J Elect Mater, 38, 356, 10.1007/s11664-008-0587-0 · DOI
  47. Kresse, 1999, From ultrasoft pseudopotentials to the projector augmented-wave method, Phys Rev B, 59, 1758, 10.1103/PhysRevB.59.1758 · DOI · Paper page
  48. Kresse, 1993, Ab initio molecular dynamics for liquid metals, Phys Rev B, 47, 558, 10.1103/PhysRevB.47.558 · DOI
  49. Blöchl, 1994, Projector augmented-wave method, Phys Rev B, 50, 17953, 10.1103/PhysRevB.50.17953 · DOI · Paper page
  50. Perdew, 1996, Generalized gradient approximation made simple, Phys Rev Lett, 77, 3865, 10.1103/PhysRevLett.77.3865 · DOI · Paper page

Cited by

Sorted by citations

Metadata

Authors
Chen, J., Lai, Y.-S., Wang, Y.-W., & Kao, C. R.
Affiliations
  • Advanced Semiconductor Engineering (Taiwan) (TW)
  • National Taiwan University (TW)
Corresponding author
Chen, Jiunn
ORCID
Venue
Microelectronics Reliability
Publisher
Elsevier BV
Published
2011-01
Volume
51
Issue
1
Pages
125-129
ISSN
0026-2714 (ISSN-L)
DOI
10.1016/j.microrel.2010.09.034
OpenAlex
W2000264894
Cited by
56
References
0
Citations by year
2026: 2 · 2025: 3 · 2024: 6 · 2023: 5 · 2022: 4 · 2021: 3 · 2020: 1 · 2018: 6 · 2017: 3 · 2016: 7 · 2015: 4 · 2014: 5 · 2013: 2 · 2012: 4
FWCI
1.77
Type
journal article
Language
en
Open access
closed
Licence
www.elsevier.com/tdm/userlicense/1.0/ (tdm)
Locations
Microelectronics Reliability (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
Keywords
copper wire bonding, intermetallic compound formation, AlCu, Al4Cu9, Al2Cu, formation energy, debonding

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review