The DOI matches its Crossref record; 39 of the 39 references it cites were found in a registry or an index.
Review of technology for normally-off HEMTs with p-GaN gate
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Cites
Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., et al. (1999) · Journal of Applied Physics · doi:10.1063/1.369664 · Cited by 3,022
AlGaN/GaN HEMTs—An Overview of Device Operation and Applications
Mishra, U. K., Parikh, P., & Wu, Y.-F. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021567 · Cited by 2,312
Hole Compensation Mechanism of P-Type GaN Films
Nakamura, S., Iwasa, N., Masayuki Senoh, M. S., & Takashi Mukai, T. M. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.1258 · Cited by 1,079
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., & Ueda, D. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908601 · Cited by 1,038
Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., & Omura, I. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2005.862708 · Cited by 574
Cai, Y., Zhou, Y., Lau, K. M., & Chen, K. J. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.881054 · Cited by 537
Heavy doping effects in Mg-doped GaN
Kozodoy, P., Xing, H., DenBaars, S. P., Mishra, U. K., Saxler, A., Perrin, R., Elhamri, S., & Mitchel, W. C. (2000) · Journal of Applied Physics · doi:10.1063/1.372098 · Cited by 424
Ohmic contacts to Gallium Nitride materials
Greco, G., Iucolano, F., & Roccaforte, F. (2016) · Applied Surface Science · doi:10.1016/j.apsusc.2016.04.016 · Cited by 360
Self-citationp-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Hwang, I., Kim, J., Choi, H. S., Choi, H., Lee, J., Kim, K. Y., Park, J.-B., Lee, J. C., Ha, J., Oh, J., et al. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2012.2230312 · Cited by 299
Wu, T.-L., Marcon, D., You, S., Posthuma, N., Bakeroot, B., Stoffels, S., Van Hove, M., Groeseneken, G., & Decoutere, S. (2015) · IEEE Electron Device Letters · doi:10.1109/led.2015.2465137 · Cited by 234
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Recent Advances in GaN‐Based Power HEMT Devices
He, J., Cheng, W., Wang, Q., Cheng, K., Yu, H., & Chai, Y. (2021) · Advanced Electronic Materials · doi:10.1002/aelm.202001045 · Cited by 258
Metadata
- Authors
- Greco, G., Iucolano, F., & Roccaforte, F.
- Venue
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Published
- 2018-05
- Volume
- 78
- Pages
- 96-106
- ISSN
- 1369-8001 (ISSN-L)
- OpenAlex
- W2762104466
- Cited by
- 316
- References
- 39
- FWCI
- 9.98
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Review of technology for normally-off HEMTs with p-GaN gate. https://app.cochat.ai/papers/10.1016/j.mssp.2017.09.027
- The paper
- Greco, G., Iucolano, F., & Roccaforte, F. (2018). Review of technology for normally-off HEMTs with p-GaN gate. Materials Science in Semiconductor Processing. https://doi.org/10.1016/j.mssp.2017.09.027
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
