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Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
Abstract
In this letter, we studied the forward bias gate breakdown mechanism on enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our knowledge, it is the first time that the temperature dependence of the forward gate breakdown has been characterized. We report for the first time on the observation of a positive temperature dependence, i.e., a higher temperature leads to a higher gate breakdown voltage. Such unexpected behavior is explained by avalanche breakdown mechanism: at a high positive gate bias, electron/hole pairs are generated in the depletion region at the Schottky metal/p-GaN junction. Furthermore, at a high gate bias but before the catastrophic gate breakdown, a light emission was detected by a emission microscopy measurement. This effect indicates an avalanche luminescence, which is mainly due to the recombination of the generated electron/hole pairs.
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Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., & Ueda, D. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908601 · Cited by 1,038
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266365 · Cited by 441
Wang, H., Wei, J., Xie, R., Liu, C., Tang, G., & Chen, K. J. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2610460 · Cited by 283
Reliability and failure analysis in power GaN-HEMTs: An overview
Meneghini, M., Rossetto, I., De Santi, C., Rampazzo, F., Tajalli, A., Barbato, A., Ruzzarin, M., Borga, M., Canato, E., Zanoni, E., et al. (2017) · 2017 IEEE International Reliability Physics Symposium (IRPS) · doi:10.1109/irps.2017.7936282 · Cited by 120
Long, Short, Monolithic - The Gate Loop Challenge for GaN Drivers: Invited Paper
Kaufmann, M., Seidel, A., & Wicht, B. (2020) · 2020 IEEE Custom Integrated Circuits Conference (CICC) · doi:10.1109/cicc48029.2020.9075937 · Cited by 35
Metadata
- Authors
- Wu, T.-L., Marcon, D., You, S., Posthuma, N., Bakeroot, B., Stoffels, S., Van Hove, M., Groeseneken, G., & Decoutere, S.
- Venue
- IEEE Electron Device Letters
- Published
- 2015-10
- Volume
- 36
- Issue
- 10
- Pages
- 1001-1003
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W1647263512
- Cited by
- 234
- References
- 2
- FWCI
- 8.71
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wu, T.-L., Marcon, D., You, S., Posthuma, N., Bakeroot, B., Stoffels, S., Van Hove, M., Groeseneken, G., & Decoutere, S. (2015). Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors. IEEE Electron Device Letters. https://doi.org/10.1109/led.2015.2465137
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