Bulk and epitaxial growth of silicon carbide

The growth of crystals and the equilibrium structure of their surfaces

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Fundamentals of Silicon Carbide Technology

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Material Science and Device Physics in SiC Technology for High-Voltage Power Devices

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Comparison of 6H-SiC, 3C-SiC, and Si for power devices

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High-temperature electronics - a role for wide bandgap semiconductors?

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Properties of Silicon Carbide

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Capillary equilibria of dislocated crystals

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Step-controlled epitaxial growth of SiC: High quality homoepitaxy

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Investigation of growth processes of ingots of silicon carbide single crystals

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Status and prospects for SiC power MOSFETs

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Degradation of hexagonal silicon-carbide-based bipolar devices

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Ultrahigh-quality silicon carbide single crystals

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Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

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SiC power-switching devices-the second electronics revolution?

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Thermodynamic Study of SiC Utilizing a Mass Spectrometer

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Amorphous and Crystalline Silicon Carbide II

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Site-competition epitaxy for superior silicon carbide electronics

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Deep level defects in electron-irradiated 4H SiC epitaxial layers

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Performance limiting micropipe defects in silicon carbide wafers

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Deep levels created by low energy electron irradiation in 4H-SiC

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Negative- U System of Carbon Vacancy in 4H -SiC

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Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

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General principles of growing large-size single crystals of various silicon carbide polytypes

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High performance of high-voltage 4H-SiC Schottky barrier diodes

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Dislocation conversion in 4H silicon carbide epitaxy

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Silicon Carbide

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Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

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Lifetime-limiting defects in n− 4H-SiC epilayers

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Performance limiting surface defects in SiC epitaxial p-n junction diodes

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Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates

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Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

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A Model of Silicon Carbide Chemical Vapor Deposition

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Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

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Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

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The C−Si (Carbon-Silicon) system

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Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H-SiC{0001} vicinal surfaces

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Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons

Danno, K., & Kimoto, T. (2006) · Journal of Applied Physics · doi:10.1063/1.2401658 · Cited by 169 · see citing works

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

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Growth mechanism of 6H-SiC in step-controlled epitaxy

Kimoto, T., Nishino, H., Yoo, W. S., et al. (1993) · Journal of Applied Physics · doi:10.1063/1.353329 · Cited by 163 · see citing works

Semi-insulating 6H–SiC grown by physical vapor transport

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Mechanisms of growth and defect properties of epitaxial SiC

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Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

Fujiwara, H., Kimoto, T., Tojo, T., & Matsunami, H. (2005) · Applied Physics Letters · doi:10.1063/1.1997277 · Cited by 158 · see citing works

Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

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The Preference of Silicon Carbide for Growth in the Metastable Cubic Form

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Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals

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Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

Hiyoshi, T., & Kimoto, T. (2009) · Applied Physics Express · doi:10.1143/apex.2.091101 · Cited by 142 · see citing works

Reduction of doping and trap concentrations in 4H–SiC epitaxial layers grown by chemical vapor deposition

Kimoto, T., Nakazawa, S., Hashimoto, K., & Matsunami, H. (2001) · Applied Physics Letters · doi:10.1063/1.1413724 · Cited by 135 · see citing works

Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping

Feng, G., Suda, J., & Kimoto, T. (2008) · Applied Physics Letters · doi:10.1063/1.2937097 · Cited by 134 · see citing works

Photoluminescence and transport studies of boron in 4H SiC

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High temperature chemical vapor deposition of SiC

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Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing

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Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles

Chen, W., & Capano, M. A. (2005) · Journal of Applied Physics · doi:10.1063/1.2137442 · Cited by 131 · see citing works

Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

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Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers

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Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

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Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

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Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition

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Crystal growth of SiC by step-controlled epitaxy

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Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

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Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers

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Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

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Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

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Basal plane dislocation-free epitaxy of silicon carbide

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Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformation

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Dislocation evolution in 4H-SiC epitaxial layers

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Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

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Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

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Electrical properties of the titanium acceptor in silicon carbide

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Structure of the carrot defect in 4H-SiC epitaxial layers

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Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt

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High-quality 4H-SiC homoepitaxial layers grown by step-controlled epitaxy

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Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

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Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC

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Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers

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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

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High temperature CVD growth of SiC

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Development of 4H–SiC Epitaxial Growth Technique Achieving High Growth Rate and Large-Area Uniformity

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Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

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Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation

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Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

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Silicon Carbide—A high temperature semiconductor

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Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates

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High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

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The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers

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Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

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Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC

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Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

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Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

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Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

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Surface diffusion lengths of adatoms on 6H-SiC{0001} faces in chemical vapor deposition of SiC

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Characterization of major in-grown stacking faults in 4H-SiC epilayers

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On-axis homoepitaxial growth on Si-face 4H–SiC substrates

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Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

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Observations of the influence of stress fields on the shape of growth and dissolution spirals

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Aluminum doping of epitaxial silicon carbide

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Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition

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Defects and carrier compensation in semi-insulating 4H−SiC substrates

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Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

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Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

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Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon

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Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

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Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation

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CVD Growth of 3C‐SiC on 4H/6H Mesas

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HTCVD Grown Semi-Insulating SiC Substrates

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Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

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Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy

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