The DOI matches its Crossref record; 449 of the 449 references it cites were found in a registry or an index; none of the 437 sources its claims cite is checked for support yet.
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Open accessOverview
AI snapshot
Written from the paper’s full text.
TL;DR
This review synthesizes fundamentals, thin-film engineering strategies, materials, and device applications of antiferroelectric oxide thin films, emphasizing how thickness, strain, interfaces, defects, doping, orientation, domains, superlattices, and octahedral tilts tune AFE order. It argues AFE thin films differ strongly from bulk and are promising for energy storage, electrocaloric cooling, electrostrain, negative capacitance, memory, tunnel junctions, thermal switching, and photovoltaics, while many mechanisms remain unresolved.
Key findings
- AFE thin films exhibit size-driven AFE-to-FE transitions: PbZrO₃ films can develop a FE tetragonal phase below a critical thickness of about 6 nm under short-circuit boundary conditions even without epitaxial strain, and PbZrO₃/PbZr₀.₈Ti₀.₂O₃ multilayers transition when the PbZrO₃ sub-layer thickness decreases to ~10 nm.
- Thin-film phase transitions differ from bulk: bulk PbZrO₃ undergoes a sharp first-order AFE-to-PE transition at ~232 °C, while epitaxial PbZrO₃ films show a modified, diffuse transition and a T_A higher by 40 K than bulk; field-induced switching can be fast, with a characteristic switching time as short as 3 ns.
- Engineering levers include strain, orientation, domain/defect/doping, superlattice/interface control, and octahedral tilt control. For PbHfO₃ films on (100)-, (111)-, and (110)-oriented SrTiO₃, saturated polarization varies from 30.54 to 38.91 μC/cm² and critical transition field from 650 to 870 kV/cm.
- Applications show strong performance: relaxor AFE (Pb₀.₉₇La₀.₀₂)(Zr₀.₅₅Sn₀.₄₅)O₃ thin films achieved ~98.5% energy storage efficiency and ~84.45 J/cm³; PbZrO₃ thermal switching showed a ratio >2.2, <150 ns switching, and >10 million cycles; AFE HfZrO memory showed ~10 ns read/write, >1 ms retention, and 10¹² endurance cycles; PbZrO₃ tunnel junctions showed ON/OFF ratios up to 10⁷.
Methods
- This is a review article, not a primary experimental study; it synthesizes experimental and theoretical literature on antiferroelectric oxide thin films.
- It covers definition/history/mechanisms, phase transitions, thin-film engineering strategies, material families including lead-based and lead-free perovskites, fluorite Hf/Zr oxides, and non-perovskite AFEs, and device applications.
- The main analysis is a thematic/narrative synthesis, with tables and figures comparing key parameters and device performance across reported systems.
Limitations
- The paper states that the mechanism and even definition of AFEs remain ambiguous, multiple soft modes and extrinsic defects obscure the origin of AFE order, structures remain controversial, fatigue mechanisms are not fully understood, and phase-transition dynamics and field-induced FE structures in thin films remain elusive.
- The paper notes that most understanding of epitaxial strain effects comes from zero-Kelvin DFT calculations and may not reflect finite-temperature behavior, and that phenomenological Landau approaches have not been widely used for AFE films.
- Evident from the text: as a review, it does not present new primary data or a systematic meta-analysis, so its conclusions depend on the selected literature.
Model-written summary. Check it against the paper before relying on it.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
326 Sources not found · 49 Own interpretation · 40 No basis given · 15 Not checked yet · 4 Own result
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Actually, there is no direct observation of pure ferrielectric structure, only its fragments, like abundant but irregular appearance at the anti-phase domain walls and field-induced ferrielectric-like phase, where it sets the lone-displacement motif of more complicated”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“On the other hand, a long-range and periodic structure of such has not been observed in experiment so far.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Fig. 12c-d summarize the ECE of different AFE material systems, which clearly indicate that with increasing thickness, ECE strength ΔT/ΔE enhances significantly [5,39,287,[362][363][364][365][366]367,369,.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [5]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [39]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [287]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Not matched
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“From Fig. 12c-d, we can also see that for bulk systems, most studies observed the negative ECE in AFE materials.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“By controlling the crystalline orientation, the giant electrostrain in PbZrO 3 thin film is reported, which is strongly anisotropic with respect to the electric field direction as shown in Fig. 13e-f.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.3. Electrostrain-based applications
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“In addition to the size effect, recent research has unveiled new AFE systems in multiferroic BiFeO 3 -based [40], lead-based PbSnO 3 [59], fluorite-structure Hf x Zr 1-x O 2 thin films [43], and quasi-2 dimensional francisite Cu 3 Bi(SeO 3 ) 2 O 2 Cl [29].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.2. Timeline of notable events
What the sources say
- Not matchedcites [40]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [59]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [43]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“When considering cooling-induced phase transition under a field-free condition, the emerged AFE phase can be understood as an interruption of an imminent FE phase transition at or slightly above the FE critical temperature T 0 , by a structural phase transition at T A (T A ≥ T 0 ).”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“During PE-AFE phase transition around T A , a FE phase would emerge briefly under electric field or under the influence of defects and impurities [66,67].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
What the sources say
- Not matchedcites [66]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [67]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Not matched
In the paper
“In many well-established AFE samples, the suppressed FE soft mode and related high-temperature dielectric anomaly credit as the vital ingredient of antiferroelectricity [30], this includes classic perovskite AFE oxides such as PbZrO 3 , PbHfO 3 , NaNbO 3 , and AgNbO 3 .”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.1. Definition of antiferroelectricity
What the sources say
- Not matchedcites [30]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“When an external electric field is applied, the interaction between the polarization and external electric field can lift the otherwise degenerate states with different polarization directions and thus one polar state becomes preferential in energy, leading to the characteristic AFE-FE phase transition, as depicted in Fig. 2b.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- It may state two separate claims as one. 137
- Probably not a substantial claim. 62
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“For example, bulk PLZT system has an ECE strength as large as 0.25 K cm/kV while the PLZT film system only has a value around 0.025 K cm/kV, almost one order of magnitude smaller.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“In 1998, a thickness driven AFE-to-FE phase transition was first reported in PbZrO 3 thin films [57].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.2. Timeline of notable events
What the sources say
- Not matchedcites [57]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Moreover, for many device applications, AFE is preferred in thin film form.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1. Introduction
plain- Asserted: passes — The authors put it forward as true.
- Checkable: fails — It may be too vague to check against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. It may be too vague to check against evidence. The paper may give no reason why it holds.
In the paper
“The second attribute can also be present without the presence of the first one [29], which is also not considered as an AFE.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.1. Definition of antiferroelectricity
What the sources say
- Not matchedcites [29]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
In the paper
“However, subsequent experiments found that the anomalously large flexoelectric coupling was not observed in AFE materials, which mildly questioned the flexoelectric effect as the origin of antiferroelectricity [68].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
What the sources say
- Not matchedcites [68]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedged- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
In the paper
“At the current state of the art, the understanding of the bulk AFEs is now well systematized and the standing questions, if not yet answered, are now identified solidly [11].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1. Introduction
What the sources say
- Not matchedcites [11]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boosted- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“A spring of recent experimental and theoretical findings have produced a plethora of diverse and occasionally conflicting accounts, which clearly demand a unified description to navigate the field.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1. Introduction
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: fails — It may be too vague to check against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. It may be too vague to check against evidence. It may state two separate claims as one.
In the paper
“The first AFE, PbZrO 3 , is discovered in the early 1950s [46].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.2. Timeline of notable events
What the sources say
- Not matchedcites [46]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“As a result, AFE thin films have become an important branch of ferroic materials due to their diverse range of properties that are tunable between different states.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1. Introduction
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Analogous to FEs, PbZrO 3 also undergoes a structural phase transition to a high-symmetry phase above a transition temperature (T A ), and a sharp dielectric peak can be observed around T A ≈ 230 • C.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.2. Timeline of notable events
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Despite that, none of the known AFE oxides is found to conform to this collinear two-sublattice model, the model highlights the essence of individual sub-unit cells for the definition of antiferroelectricity.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.1. Definition of antiferroelectricity
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“However, this is not the case in AFE thin films, which strongly differ from the bulk materials [12] and whose properties and functional behaviors are more of a mystery [13][14][15].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1. Introduction
What the sources say
- Not matchedcites [12]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [13]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [14]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boostedcorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“However, most previous articles, including reviews, mainly focus on bulk ceramics [21][22][23], and a comprehensive guideline is still missing on establishing a detailed structure-property relationship and deterministic realization of desirable physical properties in thin-film AFEs, which strongly hinders their practical applications.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1. Introduction
What the sources say
- Not matchedcites [21]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [22]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [23]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Inelastic X-ray scattering and Brillouin light scattering experiments suggested that the phase transition in PbZrO 3 , the most widely studied AFE crystal, was driven by flexoelectric coupling with polar soft mode at Brillouin zone center (Γ point), which gives rise to a missed incommensurate structural modulation [30].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
What the sources say
- Not matchedcites [30]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Subsequent to its initial observation, this behavior has been consistently observed in various AFE thin films, and it is commonly attributed to surface and/or strain effects [18,38,58].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.2. Timeline of notable events
What the sources say
- Not matchedcites [18]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [38]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [58]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Proposed mechanisms include flexoelectric coupling with single soft polar optic mode [30], multiple soft (zone-boundary and zone-center) modes coupling [42], and order-disorder transition scenarios [63], which will be discussed in detail in the following section.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.2. Timeline of notable events
What the sources say
- Not matchedcites [30]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [42]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [63]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“(Hf 1-x Zr x )O 2 is commonly seen as an AFE when nonpolar-polar switching can be induced by an external electric field, but antiparallel dipolar displacements in the nonpolar phase have not yet been clearly identified [27,28].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.1. Definition of antiferroelectricity
What the sources say
- Not matchedcites [27]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [28]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Pertinent to structure diversities in AFE thin films, this gives rise to abundant exotic phenomena, including the unusual structural phase transition [17] and complex ferrielectric-like behavior with non-zero remnant polarization [15,18].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1. Introduction
What the sources say
- Not matchedcites [17]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [15]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [18]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Therefore, it can be addressed that the structural order parameter ξ is correlated with the ∑ and R modes and has a repulsive interaction with the polar-mode-related order parameter P.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“However, anomalous superstructure and physical properties revealed by X-ray diffraction, volume expansion, field-dependent dielectric constant and specific heat suggest that PbZrO 3 is not FE, but probably the first AFE material ever known [48,49].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.2. Timeline of notable events
What the sources say
- Not matchedcites [48]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [49]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedged- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“The contribution from FE structure leads to an increase in the remnant polarization of the PbZrO 3 thin films as the film thickness decreases, resulting in a mixed feature of FE and AFE behavior in the AFE films, as illustrated in Fig .5a [18].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [18]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“It is certain that the dielectric anomaly and hysteretic behavior indicate the presence of different structural phases during the cyclic measurement of the physical properties, suggesting the first order transition.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2.1. Temperature-driven transitions
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“Additionally, compressive strain can enhance the stability of AFD and, subsequently, enhance the antiferroelectricity [134].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.2. Strain engineering
What the sources say
- Not matchedcites [134]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“In addition, few other approaches have also been reported: a first-principles-based model with strong coupling between Ʃ and R modes [69], bi-linear coupling [70] and dipole-dipole interaction [71] as a possible origin of the AFE lattice instability, etc.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
What the sources say
- Not matchedcites [69]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [70]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [71]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedcorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Despite ongoing debates on the fundamental basis of AFEs, there is a consensus regarding their macroscopic performance and characteristics.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2. Phase transitions in antiferroelectrics
plain- Asserted: passes — The authors put it forward as true.
- Checkable: fails — It may be too vague to check against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. It may be too vague to check against evidence. The paper’s conclusions may not depend on it. The paper may give no reason why it holds.
In the paper
“Functional oxides generally exhibit significant anisotropy in crystallography, and their physical properties may differ significantly with the change in crystallographic orientation [142].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.3. Orientation control
What the sources say
- Not matchedcites [142]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Similar to FEs, knowledge about the AFE order and its size effect is essential for both fundamental understanding to the nature of antiferroelectricity and for creating deterministic performance in functional devices [115].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [115]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: unclear — It is unclear whether it could be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“The calculations further indicate that the FE phase is stabilized under compressive epitaxial strain, while the AFE Pbam phase is favored under tensile strains (Fig. 5b).”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.2. Strain engineering
What the sources say
- Not matchedcites [133]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“By varying the film thickness, the remnant polarization has a maximum at an intermediate thickness where the polar orthorhombic structure dominates the FE behavior, while decreasing (increasing) the thickness would lower the remnant polarization [126], and the more energetic-favorable AFE tetragonal (PE monoclinic) phase would dominate the electrical behavior [125][126][127].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [126]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [125]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [127]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Taking the prototypical AFE PbZrO 3 as an example, as shown in Fig. 3a, thin films exhibit a modified phase transition order with diffuse characteristics, while bulk PbZrO 3 undergoes a sharp first-order phase transition from an AFE phase to a PE phase at a critical temperature of ~232 • C.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2.1. Temperature-driven transitions
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“In addition, the transition temperature of PbZrO 3 thin film is found to be higher than that of bulk, which effectively broadens the temperature region of the AFE phase [13,15].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2.1. Temperature-driven transitions
What the sources say
- Not matchedcites [13]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [15]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In this case, the coexistence of different structure periods, i.e., ↑↑↓↓ and ↑↑↓, are reported and correlated with thickness scaling [121].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [121]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“By removing the mechanical-clamping contribution from the substrate, it delivered more intrinsic behavior of AFEs and proposed the distortion of surface structure, rather than substrate-induced strain, as the origin of AFE size effect [120].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [120]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“This ferrielectric structure exists on SrTiO 3 substrates and disappear on KaTaO 3 substrates, which can be attributed to the epitaxial compressive strain that may induce the fluctuation of the ferrielectric structure as theoretically predicted by DFT calculations [122].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [122]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Xu et al. demonstrated the intrinsic size effect in lead-free AFE NaNbO 3 free-standing membranes, revealing the emergent ferroelectricity as the thickness decrease and coexistence of FE and AFE orders at an intermediate film thickness [120].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [120]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“For instance, in Nddoped BiFeO 3 thin films grown on Pt/Si substrate, a coexistence of AFE, FE and PE phases was reported, while bulk counterpart only exhibits single phase AFE.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.2. Strain engineering
What the sources say
- Not matchedcites [140]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plainSingle case- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“In contrast to FEs, AFEs exhibit a null macroscopic polarization owing to their mutually compensated dipoles at the sublattice scale.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2.2. Electric field induced transitions
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“As temperature decreases to the transition temperature T A , the dielectric permittivity reaches a high value and then drops steeply at T < T A .”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2.1. Temperature-driven transitions
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“In other word, the AFE transition may also arise from a kind of frustrated phasetransition order near the Curie temperature.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2.1. Temperature-driven transitions
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. The paper may give no reason why it holds.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The ferroelectricity in ultrathin films is promising for highly scaled next-generation Si electronics beyond 2D limit.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“This FE structure is energetically favorable below certain critical thickness due to surface effect [115] or strain effect [123], and typically exists near the film-bottom electrode heterointerface.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [115]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [123]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“For epitaxial thin films, their orientation is determined by the underlying substrates and their performance can be enhanced by selecting suitable substrate orientation [143].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.3. Orientation control
What the sources say
- Not matchedcites [143]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“In parallel, multimode Ʃ, R, and S trilinear coupling was proposed to account for the AFE phase transition [41,42].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
What the sources say
- Not matchedcites [41]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [42]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Overall, the phase transition in thin films behaves drastically distinct from that in the bulk owing to complex competition between the FE and AFE orders, and many aspects of this behavior remain open questions.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 2.1. Temperature-driven transitions
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“Specifically, the Ʃ mode outweighs the R distortion mode, which is associated to the antiphase octahedral rotation and results in an antiferrodistortive (AFD) character of oxygen displacement.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
What the sources say
- Not matchedcites [72]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“The mixed feature of FE and AFE are commonly seen in AFE thin films, and its microstructures exhibit complex constitutions due to the close energy barrier of the polar and antipolar phases.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“As the thickness decreases below 3 nm, Cheema et al. [128], recently reported an AFE-FE phase transition that occurs, and the orthorhombic FE structure can be stabilized down to 5 Å [128].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.1. Size effect
What the sources say
- Not matchedcites [128]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“In AFEs, a smaller A-site dopant or bigger B-site dopant can stabilize the AFE phase.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“Apart from the AFE in Hf 1-x Zr x O 2 thin films, the AFE behavior is usually discovered in doped HfO 2 thin films with dopant size smaller than Hf, while the dopants with bigger size only result in FE behavior [43].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [43]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Pertinent to the atom occupancy, the anti-site defects, manifested by a false positional occupation, provides a new approach to break the inversion symmetry and altering the electric property [163].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.5. Defect engineering
What the sources say
- Not matchedcites [163]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In PbZrO 3 , by using a first-principles-based effective Hamiltonian approach, Ponomareva et al. predicted that the phase transition pathway of PbZrO 3 also depends on the crystallographic orientation with respect to the applied electric field [145].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.3. Orientation control
What the sources say
- Not matchedcites [145]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“A larger average electronegativity value signifies the stronger the polarity and a closer proximity to an ionic bond, while a smaller average electronegativity value implies the weaker the polarity and the closer proximity to a covalent bond.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. It may state two separate claims as one.
In the paper
“Similar behavior can also be discovered in Al-doped HfO 2 thin films [179], where Al is also smaller than Hf.The AFE behavior is strengthened with Al content increase to 8.5 %, and a PE-FE-AFE phase transition can be realized during increasing the Al content [179].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [179]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“As a result, the smaller dopants tend to stabilize the nonpolar tetragonal phase, which can be seen as the origin of antiferroelectricity [180].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [180]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“This average difference value in electronegativity between cations and anions indicates the polarity of the chemical bond.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
hedgedcorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper may give no reason why it holds.
In the paper
“In AFEs like PbZrO 3 , the orthorhombic AFE structure results in 60 • , 90 • , 120 • and 180 • domains [153].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.4. Domain engineering
What the sources say
- Not matchedcites [153]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“Chemical doping has been widely used to mediate the competitive orderings in functional oxide systems and induce intriguing phenomena including enhanced piezoelectricity near the morphotropic phase boundary (MPB), high energy storage performance, metal-insulator transition, and high-temperature superconductivity [7,[165][166][167][168].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [7,[165][166][167][168]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
In the paper
“As a result of defect-related switching dynamics under different frequency of the same electric field, a large adiabatic temperature change of 30 K from positive ECE can be achieved at 100 Hz while a temperature change of -10 K due to negative ECE was obtained at 10 kHz [164].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.5. Defect engineering
What the sources say
- Not matchedcites [164]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“For PZT system, compositional doping can stabilize either the AFE or FE order, and this stabilization can be rather successfully interpreted in terms of adjusting the Goldschmidt tolerance factor t [169]:”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [169]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“In comparison, ZrO 2 with tetragonal matrix displays reduced energy barrier for monoclinic phase formation and reduces the field-induced FE behavior [190,191].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.7. Superlattice and interface control
What the sources say
- Not matchedcites [190]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [191]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In their experiments, applying an electric field along a specific direction triggered a series of transitions to various FE-like phases, where the polarization did not necessarily align along the field.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.3. Orientation control
What the sources say
- Not matchedcites [55]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“On the one hand, Sr 2+ [111] and La 3+ [170] can stabilize the AFE phase and bring a higher E AF than undoped PbZrO 3 , on the other hand, the B-site dopant with a smaller radius, such as Sn 4+ and Ti 4+ [171], has been employed to decrease the E AF and minimize the hysteresis loop area.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [111]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [170]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Those superlattices with large periodicities of 20/20 and 38/38 exhibit FE ordering, while for superlattices with smaller periodicities of 7/7 and 15/15 [87], the strain-induced ferroelectricity in SrTiO 3 and the layer-spacing-dependent coupling are proposed to be the leading mechanism for producing AFE-like behavior [87].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.7. Superlattice and interface control
What the sources say
- Not matchedcites [87]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Previous studies on CaZrO 3 -NaNbO 3 [175], AgNbO 3 -CaZrO 3 [176], NaNbO 3 -SrZrO 3 [177] suggest that reducing the tolerance factor t and increasing the electronegativity difference X favor antiferroelectricity.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [175]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [176]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [177]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“This would give rise to AFE-to-relaxor FE phase transition and to boost the energy storage performance [173].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [173]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“It is found that the (PbTiO 3 ) 4 /(SrTiO 3 ) 4 superlattice presents an overall antipolar 180 • domain structure at zero field and undergoes a field-induced phase transition into a polar state for fields of a few megavolts per centimeter.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.7. Superlattice and interface control
What the sources say
- Not matchedcites [185]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In 2002, the first one is observed in KNbO 3 /KTaO 3 1/1 superlattices (samples in which each KNbO 3 and KTaO 3 sub-layer are 1 unit cell thick, respectively), while bulk KTaO 3 and KNbO 3 are FE and PE, respectively, the superlattice appears AFE based on an increase in the dielectric constant with applied DC bias [86].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.7. Superlattice and interface control
What the sources say
- Not matchedcites [86]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Halliyal et al., found that besides tolerance factor t, the electronegativity difference X is another important parameter that determine the stability of the perovskite ABO 3 structure [174].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [174]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“By connecting two 180 • domains with a π phase shift, the dipoles in the domain wall are parallel, making the antiphase boundary polar.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.4. Domain engineering
What the sources say
- Not matchedcites [64]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Moreover, chemical doping would induce complex phase diagrams, resulting in the identification of abundant structural phases, e.g., the incommensurately modulated structure in (Pb,La)(Zr,Sn,Ti)O 3 system [172].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.6. Doping effect
What the sources say
- Not matchedcites [172]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Nevertheless, recent findings report that defect engineering, an intentional and purposeful introduction of defects, can enhance the material properties and even create emergent functionalities [13,161].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.5. Defect engineering
What the sources say
- Not matchedcites [13]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [161]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“FE and AFE phases in single crystals are usually composed of domains with different orientation of polar/antipolar dipoles to minimize the depolarization field energy and/or elastic energy [146,147].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.4. Domain engineering
What the sources say
- Not matchedcites [146]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [147]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“Instead of tilting by a fixed angle to comply with mechanical compatibility for neighboring domains, as observed in ordinary FEs, it is found that most of domains are non-tilted and thus should bear additional inhomogeneous mechanical stresses.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [17]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Besides the AFE orthorhombic phase and high-field FE rhombohedral phase, other intermediate low-field FE phases were predicted”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [55]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“The electric fieldtemperature phase diagram of bulk PHO was given by Fesenko and Balyunis, suggesting similar multiphase transition versus electric field as occurred in PbZrO 3 [56].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.2. PbHfO 3
What the sources say
- Not matchedcites [56]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedcorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Most of the above results were obtained in chemically (Ti and Sn) modified PbZrO 3 .”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“The room temperature AFE phase of PHO has the same phase symmetry as that of PbZrO 3 , while PHO has an even more complex phase diagram.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.2. PbHfO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Traditional lead based AFE materials, such as PbZrO 3 , still occupy most of the share in relevant research.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2. Lead-free perovskites
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. The paper may give no reason why it holds.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“However, this may change in an abrupt manner when the external conditions are varied, which is even more generous in epitaxial thin films.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“The films are, therefore, strongly relaxed through misfit dislocations [123] and this strain relaxation should likely impact the film stronger than the octahedral tilt connectivity effect.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.8. Octahedral tilt control
What the sources say
- Not matchedcites [123]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“One of the most stunning discoveries is observation of the devil's staircase in electron diffraction [209].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [209]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: fails — It may be too vague to check against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. It may be too vague to check against evidence. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“On the other hand, analogous to superior electrical conductivity identified at charged FE domain walls, one may also expect potential presence of conductivity difference between nanoscale polar regions and mesoscale non-polar regions.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“However, regarding the number of intermediate incommensurate phases, one or two, a consensus has not been reached so far [201,214].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.2. PbHfO 3
What the sources say
- Not matchedcites [201]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [214]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Considering that the AFE lattice distortion is inhomogeneous, a more complex strain distribution is possibly developed inside PbZrO 3 films.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Rests on an assumption: The AFE lattice distortion in PbZrO3 films is inhomogeneous.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Being the same as PbZrO 3 , NaNbO 3 was initially considered as one of the new FE materials [32,215], since double hysteresis loop is even more difficult to be obtained in pure NaNbO 3 .”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.1. NaNbO 3
What the sources say
- Not matchedcites [32]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [215]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Moreover, such interfacial engineering strategy is post-annealing-free and thus is beneficial to the CMOS process integration which need a low thermal budget [193].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.7. Superlattice and interface control
What the sources say
- Not matchedcites [193]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In that work, the HfO 2 interfacial layers are reported to boost the formation of (1 1 1)-texture orthorhombic ZrO 2 to enhance the ferroelectricity, while the TiO 2 interfacial layers favor the formation of (1 1 0)-textured tetragonal ZrO 2 to support antiferroelectricity.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.7. Superlattice and interface control
What the sources say
- Not matchedcites [193]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“While in Sndoped PbHfO 3 crystals, the octahedral tilts form earlier on cooling than the incommensuration, and the octahedral tilts seem to aide in moving the AFD susceptibility maximum from zone center towards the incommensurate position [202].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.8. Octahedral tilt control
What the sources say
- Not matchedcites [202]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“The first complete electric field-temperature phase diagram of bulk PbZrO 3 was proposed by Fesenko in 1978 (Fig. 7d) [55].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [55]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“PbZrO 3 is the most investigated material in the field of AFEs.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. The paper may give no reason why it holds.
In the paper
“Atomic scale TEM revealed the”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [121]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“PbHfO 3 (PHO) is often considered as the second model of AFEs and is commonly overshaded by the research on PbZrO 3 .”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.2. PbHfO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
In the paper
“Recently, a question of the ground state of PbZrO 3 has attracted attention due to the rather odd discovery of ferrielectric state having lower energy than the well accepted AFE state at 0 K, according to first principles calculations [122].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [122]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“previous study has also revealed the preferential creation of polar translational boundary by interface engineering in PbZrO 3 thin films [154].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [154]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“It undergoes a PE to AFE phase transition around 230 • C and its AFE orthorhombic unit cell contains 8 formula units (i.e., pseudocubic unit cells), where Pb ions displace antiparallelly along [1 1 0] pc direction (Fig. 7a).”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“With further temperature decreasing, several orthorhombic phases appear, including Cmcm (T 1 phase) at 575 • C, Pmnm (S phase) at 519 • C, Pmnm (R phase) at 479 • C, and to Pbcm (P phase) at 359 • C [218,219].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.1. NaNbO 3
What the sources say
- Not matchedcites [218]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [219]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Compared with the dielectric behavior and superstructure line from X-ray photography of PbZrO 3 , PHO is recognized as AFE soon after the AFE study of PbZrO 3 [50].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.2. PbHfO 3
What the sources say
- Not matchedcites [50]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Taking the discovered ferrielectric-like structure into account, it offers chances to achieve ultra-fine grid of polar entities within the nonpolar matrix, which can be used for multistate information storage.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plainconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“Moreover, second-harmonic generation and hysteresis measurement detected the polar structure at room temperature and the incipient ferroelectricity above the transition temperature.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [15]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Different from the previous two groups, the main distortion takes place in the oxygen octahedral sublattices, while the anti-polar displacements of Pb 2+ ions in the original AFE phase are preserved [102].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [102]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Among these orthorhombic phases, the P and R phases are AFE, while S and T 1 phases are PE [218,220].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.1. NaNbO 3
What the sources say
- Not matchedcites [218]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [220]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“One interesting approach that has been suggested [14] to simulate the displacement patterns in PbZrO 3 films is to use the Ising model with competing interactions [211], herein the coefficients are determined by first-principles calculations and can be slightly adjusted to account for defects in the material.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [14]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [211]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedged- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The instability under electron beam makes it difficult to capture the real ground state to some degree but provides opportunities to observe the pathway of electron beam induced phase transition.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Therefore, lead-free AFE materials with a perovskite structure such as NaNbO 3 , AgNbO 3 , (Bi 0.5 Na 0.5 )TiO 3 , rare-earth element doped BiFeO 3 thin films have attracted growing interest in recent years.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2. Lead-free perovskites
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Rests on an assumption: Lead-based AFE materials contain heavy metal lead that is toxic to the environment and human body.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Most identified structures are not directly accessible in first-principles-based modeling, and considerable breakthroughs are still needed on the theoretical aspect.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“However, the PbZrO 3 /SrRuO 3 /SrTiO 3 heterostructures are rather far from being simply strained because of the large lattice mismatch of ~ 6 %, which is relaxed almost completely by forming dislocations near the PbZrO”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [123]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In ZrO 2 thin films, with introducing the mechanical stress induced by the TiN capping layer, transformation from PE amorphous phase to AFE tetragonal phase can be realized [192], while etching the TiN layer away leads to the transition from the AFE tetragonal phase to FE orthorhombic phase [192].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.7. Superlattice and interface control
What the sources say
- Not matchedcites [192]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“The initial understanding of PHO is the isostructure of PbZrO 3 with Pbam symmetry.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.2. PbHfO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“This may either arise from the surface effect where the surface energy is dominant in straining the thin films, or from intra-domain strain that helps to minimize the material micro twists near the interface [17].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
What the sources say
- Not matchedcites [17]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Among lead-free AFEs, NaNbO 3 is particularly interesting due to the low cost of raw materials and rich structural motifs in the phase diagram.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.1. NaNbO 3
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“where both M 2 and M 3 phases are AFE, the orthorhombic O phase, tetragonal T phase and cubic C phase are PE.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [228]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“By low voltage cycling, the antipolar phase can be further stabilized and replace the FE Pbc2 1 phase, which causes the fatigue in pristine FE thin films [274].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3. Non-perovskite antiferroelectrics 4.3.1. Fluorite-structured Hf 1-x Zr x O 2
What the sources say
- Not matchedcites [274]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Although the detailed crystal structure of the new phase is still controversial, the existence of antipolar phase in BFO is beyond doubt, which introduces antiferroelectricity to multiferroics in the doped BFO system.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.4. (Bi,Re)FeO 3
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“The ferroelectricity and antiferroelectricity of fluorite structure was first discovered in 2007 and experimentally verified in Si-doped HfO 2 thin film in 2011 [261].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3. Non-perovskite antiferroelectrics 4.3.1. Fluorite-structured Hf 1-x Zr x O 2
What the sources say
- Not matchedcites [261]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Fig. 9a shows various low-energy phases of BFO, including the ground state FE structure with R3c symmetry, and two antipolar states with Pbam and Pnma symmetry.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.4. (Bi,Re)FeO 3
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“BiFeO 3 (BFO) is the most studied and important multiferroic material that was first discovered by Royen and Swars in the late of 1950s [251].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.4. (Bi,Re)FeO 3
What the sources say
- Not matchedcites [251]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“As shown in Fig. 9b, epitaxial strain can modify the relative stability of the AFE phases with respect to the FE R3c phase, while the AFE phase remains metastable for all lattice constants.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.4. (Bi,Re)FeO 3
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“phase can be further stabilized and replace the FE Pbc2 1 phase, which causes the fatigue in pristine FE thin films [274].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3. Non-perovskite antiferroelectrics 4.3.1. Fluorite-structured Hf 1-x Zr x O 2
What the sources say
- Not matchedcites [274]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“to be a rhombohedral perovskite FE with space group of R3c at room temperature, and exhibit an AFE behavior at temperature between 200 • C and 320 • C (Fig. 8d) [237].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [237]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Fujino et al. discovered a morphotropic phase boundary (MPB) with enhanced piezoelectric response in Sm-doped BiFeO 3 thin films, where a FE rhombohedral to an AFE pseudo-orthorhombic phase transition takes place at ~ 14 % Sm doping content [257].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.4. (Bi,Re)FeO 3
What the sources say
- Not matchedcites [257]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Recently, several studies have demonstrated that AFE phases can be stabilized in BFO/ LaFeO 3 superlattices and BiFeO 3 /La 0.4 Bi 0.6 FeO 3 superlattices (Fig. 9c) [187,254].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.4. (Bi,Re)FeO 3
What the sources say
- Not matchedcites [187]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [254]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In 1958, Francombe et al. first successfully synthesized AgNbO 3 ceramics and several dielectric anomalies associated with sequential structural phase transitions were identified [51].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [51]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
In the paper
“Overall, despite of some disputes in structure, its macroscopic features are basically the same and all M 1 , M 2 and M 3 phases show the characteristic double hysteresis loops, which become slimmer with increasing temperature (Fig. 8c) [232].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [232]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“The crystal structures and physical properties of BFO are very sensitive to electric field, pressure, and strain, which offers great flexibility to adjust its crystal structure, even the generation of an AFE order [252,253].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.4. (Bi,Re)FeO 3
What the sources say
- Not matchedcites [252]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [253]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Later in 2011, by using convergent-beam electron diffraction, neutron and synchrotron powder diffraction and first principles calculations, Yashima et al. revealed that AgNbO 3 is FIE at room temperature and has a non-centrosymmetric orthorhombic structure with space group of Pmc2 1 [231].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [231]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“It can be inferred that the FE phase is more stable in HfO 2 while ZrO 2 films prefer to be AFE in ultrathin film thickness [272].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3. Non-perovskite antiferroelectrics 4.3.1. Fluorite-structured Hf 1-x Zr x O 2
What the sources say
- Not matchedcites [272]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedcorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In 1974, AFE-like double hysteresis loops were first found in BNT-SrTiO 3 solid solutions at a high temperature of 170 • C [36].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [36]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“In the structure of BNT, the A site is occupied by Bi 3+ and Na + ions with equal concentration to balance the electroneutrality [238,239].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [238]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [239]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“this kind of behavior is not stable and only exist for a few cycles, which is also termed as the wake-up process [276].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3. Non-perovskite antiferroelectrics 4.3.1. Fluorite-structured Hf 1-x Zr x O 2
What the sources say
- Not matchedcites [276]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Similar to Pb 2+ , lone-pair electrons in the outermost 6 s 2 layer of Bi can produce strong electron cloud polarization [240].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.2.2. AgNbO 3
What the sources say
- Not matchedcites [240]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“In this compound, the antiferroelectricity exists at a relative wide temperature range (298 ~ 353 K) and AFE-PE phase transition occurs at 353 K.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [286]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Clearly, for AFEs, with temperature increasing, there is a transition from negative to positive ECE and the negative ECE can be attributed to the phase transition induced instability of AFE dipoles.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“Various doping experiments are conducted to improve the stability of AFE phase, in accompany with the increasing of E AF , which shows great values in energy storage applications.[367].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.1. Energy-storage capacitors
What the sources say
- Not matchedcites [367]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“(NH 4 )H 2 PO 4 (ADP) is an H-bonded compound reported to have an AFE phase under 148 K [281], and the transition temperature strongly depend on the isotope effect of H.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [281]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“On the contrary, for FEs, electric field always decreases the entropy and induces the positive ECE.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. The paper may give no reason why it holds. It may state two separate claims as one.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Different from the conventional perovskite-type AFEs which have multiple soft modes [42,201,285], the antiferroelectricity in francisite is driven by softening of a single antipolar mode [29], resulting in antiparallel displacement of adjacent Cu and Cl ions.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [42]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [201]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [285]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [29]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“For PZO films, Wu et al. [164], obtained a negative ECE at high frequency (10 kHz) and a positive ECE at low frequency fields (100 Hz).”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [164]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In AFE Pb 0.97 La 0.02 Zr 0.85 Sn 0.13 Ti 0.02 O 3 films [291], the discharging time was determined to be within 6 ns and a maximum switching current density was achieved as high as 9400 A/cm 2 , which make AFE thin films the great candidate for pulsed power applications in high-speed multichip modules.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.1. Energy-storage capacitors
What the sources say
- Not matchedcites [291]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirectSingle case- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“In contrast, the polarization of FE always decreases with increasing temperature, leading to a positive ECE.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Since applying an electric field typically aligns the diploes and decreases S c , S p has an increase to keep the total S unchanged.The increase of S p causes a temperature rise ΔT, adiabatic temperature change.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- The authors state this as an assumption: For dielectrics, the electronic bandgap is typically large and the electronic entropy S_e can be ignored.
- The authors state this as an assumption: The fast phase transition under an external electric field can be treated as adiabatic and reversible without heat exchange between the dielectric material and the external environment.
- The authors state this as an assumption: The total entropy S of dielectrics has two major components: dipolar or configurational entropy S_c and vibrational entropy S_p.
In the paper
“The first ECE measurement of AFE materials was reported in 1968 by Thacher [34].That early work has shown positive ECE with small magnitude of ΔT.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [34]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“La-doped M-type hexaferrites (La 0.2 Sr 0.7 Fe 12 O 19 ) was proved to integrate antiferroelectricity and ferromagnetism as a novel multiferroic candidate in recent years [282].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [282]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
boostedcorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Dielectric capacitors possess faster charge-discharge speed (~ns), higher power density (up to 10 8 W/kg), better temperature stability and fatigue resistance, compared with fuel cells, batteries, and supercapacitors, and thus are widely used in electronic devices and electrical power systems [288].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.1. Energy-storage capacitors
What the sources say
- Not matchedcites [288]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“However, for thin film systems, the ECE phenomena is complex since both negative ECE and positive ECE can be observed [365,380].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [365]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [380]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“The underlying mechanism is that the domain nucleation and growth is not sufficient at high frequency.In such case, with increasing temperature, the thermal energy promotes the domain nucleation and decreases the pinning force of domain wall movement, leading to the increase of P and negative ECE.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [164]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“While at low frequency, there is enough time for the domain nucleation and growth.As a result, the spontaneous polarization reduces with increasing temperature, and therefore the polarization of the electric-field-driven FE phase reduces, leading to the positive ECE.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“Notably, ΔT for combing negative and positive ECE is ΔT 1 + ΔT 2 + ΔT 3 , which is larger than ΔT 1 for only positive ECE (noting that ΔT 1 , ΔT 2 , and ΔT 3 are all positive values).”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [367]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“The negative ECE is generally attributed to the non-collinear response of dipoles to an external electric field [5], which increases the entropy and decreases the temperature.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [5]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Despite the AFE only exists at a narrow temperature gap (235.2 ~ 244.2 K) below room temperature, it is the first discovery of the succussive FE -AFE -PE phase transitions in organic-inorganic hybrid perovskites and sheds light on the importance of exploring AFEs based on organic-inorganic hybrid compounds.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [77]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plainSingle case- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“francisite Cu 3 Bi(SeO3) 2 O 2 Cl is a newly reported mineral and undergoes AFE phase transition under 115 K with dielectric anomaly [29].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [29]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“By controlling the orientation, the (1 1 1)-oriented films exhibit the largest polarization among (1 1 1)-, (1 1 0)-and (0 0 1)-oriented films and gain the highest energy storage density (~84.45J/cm 3 ) [294].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.1. Energy-storage capacitors
What the sources say
- Not matchedcites [294]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“This material is more similar to ideal Kittel's model of antiferroelectricity [24] and offers a good equivalence of antiferromagnets.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [24]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaincorrelationalSingle case- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In 2011, the negative ECE in AFEs was observed for the first time [362].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.2. Electrocaloric cooling
What the sources say
- Not matchedcites [362]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“AFE thin films exhibit a huge potential for energy storage due to the great improvement of E BDS (~2-5 MV/cm), which is more than one order of magnitude higher than that in bulks.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.1. Energy-storage capacitors
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: unclear — It is unclear why the paper says it holds.
It may state two separate claims as one.
In the paper
“However, clear AFE double hysteresis loops have not been reported yet probably because of the relatively low bandgap of the material [23].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.3.2. Other antiferroelectrics
What the sources say
- Not matchedcites [23]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“For dielectric capacitors, large breakdown field E BDS , small P r , large P max , and slim hysteresis (small J loss ) are needed for high energy storage density and efficiency η [289,290].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.1. Energy-storage capacitors
What the sources say
- Not matchedcites [289]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [290]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The mechanism and even the definition of AFEs are ambiguous among different reports.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 6. Summary and perspective
plain- Asserted: passes — The authors put it forward as true.
- Checkable: fails — It may be too vague to check against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. It may be too vague to check against evidence.
- Rests on an assumption: Multiple soft modes during AFE phase transition display complex results of structure and electrical behavior, which obscure the origin of AFE order.
- Rests on an assumption: The lack of defect-free AFE material usually results in extrinsic behaviors.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“this phenomenological model assumes the presence of depolarized state and has its limit on the cases of multidomain FEs [415,416], and polycrystalline FEs where the polarized states are spatially remained [413].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.4. Negative capacitance
What the sources say
- Not matchedcites [415]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [416]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [413]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In typical FE, negative capacitance behavior was theoretically predicted by Landauer in 1976 [407].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.4. Negative capacitance
What the sources say
- Not matchedcites [407]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“In 2019, Intel patented an AFE based memory cell [420].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.5. Memory devices
What the sources say
- Not matchedcites [420]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Not matched
In the paper
“Negative capacitance has been intensely researched in recent few years due to its potential merits to overcome the so-called Boltzmann tyranny in conventional transistor and enable the application for ultralow power electronics [406].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.4. Negative capacitance
What the sources say
- Not matchedcites [406]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plainconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“This model succeeds in explaining the observed negative capacitance in several experimental results [414,417], and in prediction of double S-shaped curve in extended ISE model, which considers the distribution of compensating charges, as verified by experiments [418].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.4. Negative capacitance
What the sources say
- Not matchedcites [414]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [417]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [418]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Apart from the reversible giant electrostrain in conventional AFEs, for some doped AFE compositions with a field-induced metastable FE phase, electric field induced strain can be maintained even after removal of the electric field, which can set back to the initial zero state by heating over the transition temperature.This interesting phenomenon is the so-called shape memory effect [405].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.3. Electrostrain-based applications
What the sources say
- Not matchedcites [405]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“This AFTJ exhibits higher endurance property (>10 9 cycles) and faster switching speed (<30 ns) than Hf 0.5 Zr 0.5 O 2 -based FTJ.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.6. Tunnel junctions
What the sources say
- Not matchedcites [423]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“Although non-volatile FE random access memories (FRAM) have been commercially utilized for years [80], the limited data storage density hinder its further application and market prospect.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.5. Memory devices
What the sources say
- Not matchedcites [80]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“In contrast, for the counterpart of FEs, the AFEs, believed to be centrosymmetric, cannot induce the photovoltaic effect.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.8. Photovoltaics
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. The paper may give no reason why it holds.
- Rests on an assumption: AFEs are centrosymmetric.
In the paper
“As early as 1968, Berlincourt et al. analyzed the feasibility of using AFE material to make underwater acoustic transducer, and pointed out that transducers based on AFE material own advantages of simple structure, small size, and light weight [403].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.3. Electrostrain-based applications
What the sources say
- Not matchedcites [403]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
In the paper
“In this way, polar and nonpolar states can be effectively obtained with low voltage switching and enhanced endurance.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.5. Memory devices
What the sources say
- Not matchedcites [280]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“By integrating the P-E a curve, the AFE energy landscape of ZrO 2 can be further obtained and the normally forbidden regions near the structural phase transition, exhibiting negative capacitance feature, were stabilized in the AFE/dielectric heterostructure (Fig. 14e).”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.4. Negative capacitance
What the sources say
- Not matchedcites [61]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“The ground AFE state can be perturbed by electric field and then a metastable FE state can be induced.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 6. Summary and perspective
What the sources say
- Not matchedcites [61]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“However, these detailed structural evolution under external fields remain elusive, such as the dipole switching kinetics and phase transition pathway.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 6. Summary and perspective
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim.
In the paper
“In that demonstration, the nonlinear behavior of AFE can boost the charge for different logic states, thus the retention time has an increase.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.5. Memory devices
What the sources say
- Not matchedcites [420]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“As a counterpart of FE, AFE materials do not exhibit net polarization and thus seem to lack a depolarization field, which is considered as one of the origins of forming topological polar structure.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 6. Summary and perspective
hedged- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
- Rests on an assumption: AFE materials do not exhibit net polarization.
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“In AFE Hf x Zr 1-x O 2 , the read/write speed is reported to be as fast as 10 ns, and even down to 2 ns within different scenarios from 3-D Embedded-DRAM [264] to FeRAM using AFE capacitors [421].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.5. Memory devices
What the sources say
- Not matchedcites [264]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [421]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim could be matched to a paper in Crossref, so there is nothing to check it against.
In the paper
“Recent results reveal that resistance and dielectrics in electric circuit can slow down the charging process and help to stabilize the negative capacitance state [408][409][410].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.4. Negative capacitance
What the sources say
- Not matchedcites [408]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [409]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
- Not matchedcites [410]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The structures of AFEs are complex and remain controversial.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 6. Summary and perspective
plain- Asserted: passes — The authors put it forward as true.
- Checkable: unclear — It is unclear whether it could be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“With increasing electric field, the 1/4 superstructure diffraction damps, while weak 1/8 and strong 3/8 superstructure diffraction spots emerge.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 6. Summary and perspective
What the sources say
- Not matchedcites [14]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“The suppression of negative capacitance effect in the structure can be fully explained by the ISE model, while LGD model predict the inconsistent results [419].”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.4. Negative capacitance
What the sources say
- Not matchedcites [419]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
In the paper
“In addition, Liu et al. also reported that the PbZrO 3 -based thermal switching is ultrafast (<150 ns) and can repeat more than 10 million times.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.7. Thermal switching
What the sources say
- Not matchedcites [9]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Moreover, AFE exhibited a quicker response time (~100 kHz) than traditional shape memory metallic alloys (~100 Hz), thus, AFE-based devices are promising for practical industrial applications, such as digital displacement transducers.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 5.3. Electrostrain-based applications
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
The paper relies on this without support.
A comprehensive understanding that addresses the specific requirements for manipulating the functional properties of AFE thin films is still lacking.
“Currently, a comprehensive understanding that addresses the specific requirements for manipulating the functional properties of AFE thin films is still lacking.”
The paper relies on this without support.
AFE films share some properties and control principles with FE films but have distinct characteristics.
“Although AFE films share some properties and control principles with FE films, they have distinct characteristics.”
The paper relies on this without support.
Defects are common in materials and are inevitable during the sample preparation process.
“Defects are common in materials and are inevitable during the sample preparation process.”
The paper relies on this without support.
The AFE lattice distortion in PbZrO3 films is inhomogeneous.
“Considering that the AFE lattice distortion is inhomogeneous”
The paper relies on this without support.
Lead-based AFE materials contain heavy metal lead that is toxic to the environment and human body.
“However, these materials contain heavy metal lead, which is toxic to the environment and human body.”
The paper relies on this without support.
Capacitors generally have low energy densities (typically less than 10 J/cm3) relative to other energy storage systems.
“However, capacitors generally have low energy densities (typically less than 10 J/cm 3 ) relative to other energy storage systems.”
The paper relies on this without support.
Introducing relaxor into AFE usually results in lower polarization under the same electric field.
“Usually, introducing relaxor into AFE results in lower polarization under the same electric field.”
The paper relies on this without support.
The tolerance factor t is a critical indicator for the phase stability of perovskite structure.
“It is known that the tolerance factor t is a critical indicator for the phase stability of perovskite structure.”
The paper relies on this without support.
The origin of Hf1-xZrxO2-based antiferroelectricity and its structure details are still obscure.
“Although the origin of Hf 1-x Zr x O 2 -based antiferroelectricity and its structure details are still obscure”
The authors state this as an assumption.
For dielectrics, the electronic bandgap is typically large and the electronic entropy S_e can be ignored.
“For dielectrics, their electronic bandgap is typically large, and the electronic entropy S e can be ignored.”
The authors state this as an assumption.
The fast phase transition under an external electric field can be treated as adiabatic and reversible without heat exchange between the dielectric material and the external environment.
“The fast phase transition under an external electric field (a few nanoseconds [357,358]) can be treated as adiabatic and reversible without heat exchange between the dielectric material and the external environment.”
The authors state this as an assumption.
The total entropy S of dielectrics has two major components: dipolar or configurational entropy S_c and vibrational entropy S_p.
“Thus, the total entropy S has two major components: dipolar or configurational entropy S c and vibrational entropy S p .”
The authors state this as an assumption.
In the ISE model, there is no charge injection.
“By assuming that there is no charge injection”
The authors state this as an assumption.
The LGD phenomenological model assumes the presence of a depolarized state.
“this phenomenological model assumes the presence of depolarized state”
The paper relies on this without support.
AFEs are centrosymmetric.
“the AFEs, believed to be centrosymmetric”
The paper relies on this without support.
Multiple soft modes during AFE phase transition display complex results of structure and electrical behavior, which obscure the origin of AFE order.
“On one hand, multiple soft modes during AFE phase transition displays complex results of structure and electrical behavior, which obscure the origin of AFE order.”
The paper relies on this without support.
The lack of defect-free AFE material usually results in extrinsic behaviors.
“On the other hand, the lack of defect-free AFE material usually results in extrinsic behaviors.”
The paper relies on this without support.
AFE materials do not exhibit net polarization.
“As a counterpart of FE, AFE materials do not exhibit net polarization and thus seem to lack a depolarization field, which is considered as one of the origins of forming topological polar structure.”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Rated minor: it would not touch a result — a value no result rests on, a p-value that stays on the same side of the significance level, or a conflict that is clerical, resolved elsewhere in the paper, or outside its own findings.
In the paper
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
“χ = 1/(A(T -T 0 ) + Bξ 2 0 ) (2”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 1.3. Mechanisms of antiferroelectricity
“which corresponds to the AFE-type anomaly below the transition if A(T-T 0 ) + ηξ 2 0 increases on cooling below the transition temperature.”
Rated minor: it would not touch a result — a value no result rests on, a p-value that stays on the same side of the significance level, or a conflict that is clerical, resolved elsewhere in the paper, or outside its own findings.
In the paper
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 3.8. Octahedral tilt control
“The commonly used substrates and electrode layers, such as SrTiO 3 and SrRuO 3 , differs by near -3% from Pb-based AFEs.”
§ Antiferroelectric oxide thin-films: Fundamentals, properties, and applications > 4.1.1. PbZrO 3
“the PbZrO 3 /SrRuO 3 /SrTiO 3 heterostructures are rather far from being simply strained because of the large lattice mismatch of ~ 6 %”
Citations
Cites
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
Ohtomo, A., & Hwang, H. Y. (2004) · Nature · doi:10.1038/nature02308 · Cited by 4,708
Multiferroics: progress and prospects in thin films
Ramesh, R., & Spaldin, N. A. (2007) · Nature Materials · doi:10.1038/nmat1805 · Cited by 4,004
Scott, J. F., & de Araújo, C. A. P. (1989) · Science · doi:10.1126/science.246.4936.1400 · Cited by 3,891
Applications of Modern Ferroelectrics
Scott, J. F. (2007) · Science · doi:10.1126/science.1129564 · Cited by 3,283
Ferroelectricity in hafnium oxide thin films
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., & Böttger, U. (2011) · Applied Physics Letters · doi:10.1063/1.3634052 · Cited by 2,848
Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films
Choi, K. J., Biegalski, M. D., Li, Y., Sharan, A., Schubert, J., Uecker, R., Reiche, P., Chen, Y. B., Pan, X. Q., Gopalan, V., et al. (2004) · Science · doi:10.1126/science.1103218 · Cited by 1,962
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
Müller, J., Böscke, T. S., Schroeder, U. P., Mueller, S., Bräuhaus, D., Böttger, U., Frey, L., & Mikolajick, T. (2012) · Nano Letters · doi:10.1021/nl302049k · Cited by 1,874
Above-bandgap voltages from ferroelectric photovoltaic devices
Yang, S., Seidel, J., Byrnes, S. J., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.451 · Cited by 1,814
Giant Electrocaloric Effect in Thin-Film PbZr 0.95 Ti 0.05 O 3
Mischenko, A. S., Zhang, Q., Scott, J. F., et al. (2006) · Science · doi:10.1126/science.1123811 · Cited by 1,719
Critical thickness for ferroelectricity in perovskite ultrathin films
Junquera, J., & Ghosez, P. (2003) · Nature · doi:10.1038/nature01501 · Cited by 1,717
Defects in epitaxial multilayers
Matthews, J. W., & Blakeslee, A. E. (1974) · Journal of Crystal Growth · doi:10.1016/s0022-0248(74)80055-2 · Cited by 1,526
Conduction at domain walls in oxide multiferroics
Seidel, J., Martin, L. W., He, Q., Zhan, Q., Chu, Y., Rother, A., Hawkridge, M. E., Maksymovych, P., Yu, P., Gajek, M., et al. (2009) · Nature Materials · doi:10.1038/nmat2373 · Cited by 1,420
Electroceramics for High-Energy Density Capacitors: Current Status and Future Perspectives
Wang, G., Lu, Z., Li, Y., Li, L., Ji, H., Feteira, A. M., Zhou, D., Wang, D., Zhang, S. J., & Reaney, I. M. (2021) · Chemical Reviews · doi:10.1021/acs.chemrev.0c01264 · Cited by 1,386
Ferroelectricity in Ultrathin Perovskite Films
Fong, D. D., Stephenson, G. B., Streiffer, S. K., et al. (2004) · Science · doi:10.1126/science.1098252 · Cited by 1,296
Jin, L., Li, F., & Zhang, S. J. (2013) · Journal of the American Ceramic Society · doi:10.1111/jace.12773 · Cited by 1,234
Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 ‐Based Films
Park, M. H., Lee, Y. H., Kim, H., Kim, Y. J., Moon, T., Kim, K. D., Müller, J., Kersch, A., Schroeder, U. P., Mikolajick, T., et al. (2015) · Advanced Materials · doi:10.1002/adma.201404531 · Cited by 1,213
Ultrahigh–energy density lead-free dielectric films via polymorphic nanodomain design
Pan, H., Li, F., Liu, Y., Zhang, Q., Wang, M., Lan, S., Zheng, Y., Ma, J., Gu, L., Shen, Y., et al. (2019) · Science · doi:10.1126/science.aaw8109 · Cited by 1,147
Jones, G. O., & Thomas, P. A. (2002) · Acta Crystallographica Section B Structural Science · doi:10.1107/s0108768101020845 · Cited by 972
Physical Mechanisms behind the Field‐Cycling Behavior of HfO 2 ‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 965
Improper ferroelectricity in perovskite oxide artificial superlattices
Bousquet, É., Dawber, M., Stucki, N., Lichtensteiger, C., Hermet, P., Gariglio, S., Triscone, J., & Ghosez, P. (2008) · Nature · doi:10.1038/nature06817 · Cited by 936
Materlik, R., Künneth, C., & Kersch, A. (2015) · Journal of Applied Physics · doi:10.1063/1.4916707 · Cited by 892
Incipient Ferroelectricity in Al‐Doped HfO 2 Thin Films
Mueller, S., Mueller, J., Singh, A., et al. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201103119 · Cited by 861
Dielectric Properties and Phase Transitions of NaNb O 3 and (Na,K)Nb O 3
Shirane, G., Newnham, R. E., & Pepinsky, R. (1954) · Physical Review · doi:10.1103/physrev.96.581 · Cited by 858
Progress in high-strain perovskite piezoelectric ceramics
Hao, J., Li, W., Zhai, J., et al. (2018) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2018.08.001 · Cited by 842
Park, M. H., Kim, H., Kim, Y. J., et al. (2013) · Applied Physics Letters · doi:10.1063/1.4811483 · Cited by 832
A comprehensive review on the progress of lead zirconate-based antiferroelectric materials
Hao, X., Zhai, J., Kong, L. B., & XU, Z. (2014) · Progress in Materials Science · doi:10.1016/j.pmatsci.2014.01.002 · Cited by 789
Negative capacitance in a ferroelectric capacitor
Khan, A. I., Chatterjee, K., Wang, B., et al. (2014) · Nature Materials · doi:10.1038/nmat4148 · Cited by 785
Observation of room-temperature polar skyrmions
Das, S., Tang, Y., Hong, Z., et al. (2019) · Nature · doi:10.1038/s41586-019-1092-8 · Cited by 774
Self-citationTakagi, H., Ido, T., Ishibashi, S., et al. (1989) · Physical review. B, Condensed matter · doi:10.1103/physrevb.40.2254 · Cited by 771
Antiferroelectric Chiral Smectic Phases Responsible for the Trislable Switching in MHPOBC
Chandani, A. D. L., Górecka, E., Ouchi, Y., et al. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l1265 · Cited by 715
The fundamentals and applications of ferroelectric HfO2
Schroeder, U. P., Park, M. H., Mikolajick, T., et al. (2022) · Nature Reviews Materials · doi:10.1038/s41578-022-00431-2 · Cited by 714
Qi, H., Zuo, R., Xie, A., Tian, A., Fu, J., Zhang, Y., & Zhang, S. J. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201903877 · Cited by 673
Theoretical investigation of magnetoelectric behavior in Bi Fe O 3
Ravindran, P., Vidya, R., Kjekshus, A., Fjellvåg, H., & Eriksson, O. (2006) · Physical Review B · doi:10.1103/physrevb.74.224412 · Cited by 666
Domains in Ferroic Crystals and Thin Films
Tagantsev, A. K., Cross, L. E., & Fousek, J. (2010) · Springer eBooks · doi:10.1007/978-1-4419-1417-0 · Cited by 666
Theory of Antiferroelectric Crystals
KITTEL, C. (1951) · Physical Review · doi:10.1103/physrev.82.729 · Cited by 651
High-entropy enhanced capacitive energy storage
Yang, B., Zhang, Y., Pan, H., Si, W., Zhang, Q., Shen, Z., Yu, Y., Lan, S., Meng, F., Liu, Y., et al. (2022) · Nature Materials · doi:10.1038/s41563-022-01274-6 · Cited by 624
Ising model with solitons, phasons, and "the devil's staircase"
Bak, P., & von Boehm, J. (1980) · Physical review. B, Condensed matter · doi:10.1103/physrevb.21.5297 · Cited by 607
Tagantsev, A. K., Stolichnov, I., Colla, E., et al. (2001) · Journal of Applied Physics · doi:10.1063/1.1381542 · Cited by 603
Giant energy-storage density with ultrahigh efficiency in lead-free relaxors via high-entropy design
Chen, L., Deng, S., Liu, H., et al. (2022) · Nature Communications · doi:10.1038/s41467-022-30821-7 · Cited by 575
Qi, H., & Zuo, R. (2019) · Journal of Materials Chemistry A · doi:10.1039/c8ta12232f · Cited by 556
Scott, J. F. (2011) · Annual Review of Materials Research · doi:10.1146/annurev-matsci-062910-100341 · Cited by 552
Ferroelectricity versus Antiferroelectricity in the Solid Solutions of PbZrO 3 and PbTiO 3
Sawaguchi, E. (1953) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.8.615 · Cited by 544
Antiferroelectrics for Energy Storage Applications: a Review
Liu, Z., Lü, T., Ye, J., Wang, G., Dong, X., Withers, R. L., & Liu, Y. (2018) · Advanced Materials Technologies · doi:10.1002/admt.201800111 · Cited by 520
Luo, N., Han, K., Cabral, M. J., Liao, X., Zhang, S. J., Liao, C., Zhang, G., Chen, X., Feng, Q., Li, J., et al. (2020) · Nature Communications · doi:10.1038/s41467-020-18665-5 · Cited by 510
Observation of Nanoscale 180 ° Stripe Domains in Ferroelectric P b T i O 3 Thin Films
Streiffer, S. K., Eastman, J. A., Fong, D. D., et al. (2002) · Physical Review Letters · doi:10.1103/physrevlett.89.067601 · Cited by 506
A Superhydrophobic Smart Coating for Flexible and Wearable Sensing Electronics
Li, L., Bai, Y., Li, L., Wang, S., & Zhang, T. (2017) · Advanced Materials · doi:10.1002/adma.201702517 · Cited by 469
Self-citationFerroelectric and antiferroelectric properties of (Na0.5Bi0.5)TiO3-SrTiO3 solid solution ceramics
Sakata, K., & Masuda, Y. (1974) · Ferroelectrics · doi:10.1080/00150197408238042 · Cited by 453
Anomalously low electronic thermal conductivity in metallic vanadium dioxide
Lee, S., Hippalgaonkar, K., Yang, F., Hong, J., Ko, C., Suh, J., Liu, K., Wang, K., Urban, J. J., Zhang, X., et al. (2017) · Science · doi:10.1126/science.aag0410 · Cited by 448
Wang, H., Liu, Y., Yang, T., et al. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201807321 · Cited by 422
Dielectric Properties of Lead Zirconate
Shirane, G., Sawaguchi, E., & Takagi, Y. (1951) · Physical Review · doi:10.1103/physrev.84.476 · Cited by 420
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Zhou, D., Xu, J., Li, Q., et al. (2013) · Applied Physics Letters · doi:10.1063/1.4829064 · Cited by 409
Unveiling the double-well energy landscape in a ferroelectric layer
Hoffmann, M., Fengler, F. P. G., Herzig, M., et al. (2019) · Nature · doi:10.1038/s41586-018-0854-z · Cited by 408
Park, M. H., Lee, Y. H., Kim, H., et al. (2017) · Nanoscale · doi:10.1039/c7nr02121f · Cited by 403
Spatially resolved steady-state negative capacitance
Yadav, A. K., Nguyen, K. X., Hong, Z., et al. (2019) · Nature · doi:10.1038/s41586-018-0855-y · Cited by 402
Dorcet, V., Trolliard, G., & Boullay, P. (2008) · Chemistry of Materials · doi:10.1021/cm8004634 · Cited by 401
Tan, X., Ma, C., Frederick, J., et al. (2011) · Journal of the American Ceramic Society · doi:10.1111/j.1551-2916.2011.04917.x · Cited by 401
Park, M. H., Kim, H., Kim, Y. J., et al. (2014) · Applied Physics Letters · doi:10.1063/1.4866008 · Cited by 397
Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films
Kim, J., Saremi, S., Acharya, M., Velarde, G., Parsonnet, E., Donahue, P., Qualls, A., Garcia, D., & Martin, L. W. (2020) · Science · doi:10.1126/science.abb0631 · Cited by 394
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
Cheema, S., Shanker, N., Wang, L., Hsu, C., Hsu, S., Liao, Y.-H., Jose, M. S., Gomez, J. T., Chakraborty, W., Li, W., et al. (2022) · Nature · doi:10.1038/s41586-022-04425-6 · Cited by 394
Antiferroelectric Structure of Lead Zirconate
Sawaguchi, E., Maniwa, H., & Hoshino, S. (1951) · Physical Review · doi:10.1103/physrev.83.1078 · Cited by 380
Peng, B., Fan, H., & Zhang, Q. (2013) · Advanced Functional Materials · doi:10.1002/adfm.201202525 · Cited by 363
The origin of antiferroelectricity in PbZrO3
Tagantsev, A. K., Vaideeswaran, K., Борисович, В. С., Filimonov, A. V., Георгиевич, Б. Р., Павлович, Ш. А., Andronikova, D. A., Rudskoy, A. I., Baron, A. Q. R., Uchiyama, H., et al. (2013) · Nature Communications · doi:10.1038/ncomms3229 · Cited by 356
Park, M. H., Kim, H., Kim, Y. J., Moon, T., Kim, K. D., & Hwang, C. S. (2014) · Advanced Energy Materials · doi:10.1002/aenm.201400610 · Cited by 350
Sun, Z., Ma, C., Liu, M., Cui, J., Lu, L., Lu, J., Lou, X., Jin, L., Wang, H., & Jia, C. (2016) · Advanced Materials · doi:10.1002/adma.201604427 · Cited by 350
Luo, N., Han, K., Zhuo, F., Xu, C., Zhang, G., Liu, L., Chen, X., Hu, C., Zhou, H., & Wei, Y. (2019) · Journal of Materials Chemistry A · doi:10.1039/c9ta02053e · Cited by 341
Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices
Nukala, P., Ahmadi, M., Wei, Y., et al. (2021) · Science · doi:10.1126/science.abf3789 · Cited by 340
Polar metals by geometric design
Kim, T. H., Puggioni, D., Yuan, Y., Xie, L., Zhou, H., Campbell, N., Ryan, P. J., Choi, Y., Kim, J., Patzner, J. J., et al. (2016) · Nature · doi:10.1038/nature17628 · Cited by 339
Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials
Nataf, G., Guennou, M., Gregg, J., Meier, D., Hlinka, J., Salje, E., & Kreisel, J. (2020) · Nature Reviews Physics · doi:10.1038/s42254-020-0235-z · Cited by 330
Lead-free antiferroelectric: xCaZrO 3 -(1 − x)NaNbO 3 system (0 ≤ x ≤ 0.10)
Shimizu, H., Guo, H., Reyes‐Lillo, S. E., et al. (2015) · Dalton Transactions · doi:10.1039/c4dt03919j · Cited by 323
Direct and indirect measurements on electrocaloric effect: Recent developments and perspectives
Liu, Y., Scott, J. F., & Dkhil, B. (2016) · Applied Physics Reviews · doi:10.1063/1.4958327 · Cited by 320
Monoclinic crystal structure of polycrystalline Na0.5Bi0.5TiO3
Aksel, E., Forrester, J. S., Jones, J. L., et al. (2011) · Applied Physics Letters · doi:10.1063/1.3573826 · Cited by 318
Mechanism of enhanced energy storage density in AgNbO3-based lead-free antiferroelectrics
Lu, Z., Bao, W., Wang, G., Sun, S., Li, L., Li, J., Yang, H., Ji, H., Feteira, A. M., Li, D., et al. (2020) · Nano Energy · doi:10.1016/j.nanoen.2020.105423 · Cited by 315
Pan, W. Y., Dam, C. Q., Zhang, Q. M., et al. (1989) · Journal of Applied Physics · doi:10.1063/1.343578 · Cited by 309
Mishra, S. K., Choudhury, N., Chaplot, S. L., et al. (2007) · Physical Review B · doi:10.1103/physrevb.76.024110 · Cited by 299
Geng, W., Liu, Y., Meng, X., et al. (2015) · Advanced Materials · doi:10.1002/adma.201501100 · Cited by 299
Lead-free antiferroelectric niobates AgNbO 3 and NaNbO 3 for energy storage applications
Yang, D. F., Gao, J., Shu, L., et al. (2020) · Journal of Materials Chemistry A · doi:10.1039/d0ta08345c · Cited by 299
Ag Nb O 3 : A lead-free material with large polarization and electromechanical response
Fu, D., Endo, M., Taniguchi, H., et al. (2007) · Applied Physics Letters · doi:10.1063/1.2751136 · Cited by 297
First-principles study on doping and phase stability of HfO2
Lee, C.-K., Cho, E., Lee, H., Hwang, C. S., & Han, S. (2008) · Physical Review B · doi:10.1103/physrevb.78.012102 · Cited by 293
Recent Advances in Multilayer‐Structure Dielectrics for Energy Storage Application
Feng, M., Feng, Y., Zhang, T., et al. (2021) · Advanced Science · doi:10.1002/advs.202102221 · Cited by 291
Self-citationStrain gradients in epitaxial ferroelectrics
Catalán, G., Noheda, B., McAneney, J., et al. (2005) · Physical Review B · doi:10.1103/physrevb.72.020102 · Cited by 290
Ferroelectric negative capacitance
Íñiguez, J., Zubko, P., Luk’yanchuk, I. A., et al. (2019) · Nature Reviews Materials · doi:10.1038/s41578-019-0089-0 · Cited by 290
Antiferroelectricity in thin-film ZrO2 from first principles
Reyes‐Lillo, S. E., Garrity, K. F., & Rabe, K. M. (2014) · Physical Review B · doi:10.1103/physrevb.90.140103 · Cited by 289
The missing boundary in the phase diagram of PbZr1−xTixO3
Zhang, N., Yokota, H., Glazer, A. M., et al. (2014) · Nature Communications · doi:10.1038/ncomms6231 · Cited by 289
Fujino, S., Murakami, M., Anbusathaiah, V., et al. (2008) · Applied Physics Letters · doi:10.1063/1.2931706 · Cited by 284
Bai, Y., Zheng, G., & Shi, S. (2011) · Materials Research Bulletin · doi:10.1016/j.materresbull.2011.07.038 · Cited by 281
Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
Schenk, T., Hoffmann, M., Ocker, J., et al. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b05773 · Cited by 280
Ye, J., Wang, G., Zhou, M., Liu, N., Chen, X., Li, S., Cao, F., & Dong, X. (2019) · Journal of Materials Chemistry C · doi:10.1039/c9tc01414d · Cited by 278
X-ray study of phase transitions in efrroelectric Na0.5Bi0.5TiO3
Zvirgzds, J., Kapostin, P. P., Zvirgzde, J. V., et al. (1982) · Ferroelectrics · doi:10.1080/00150198208210600 · Cited by 272
Tian, A., Zuo, R., Qi, H., et al. (2020) · Journal of Materials Chemistry A · doi:10.1039/d0ta02285c · Cited by 271
Hao, X., Zhai, J., & Yao, X. (2009) · Journal of the American Ceramic Society · doi:10.1111/j.1551-2916.2009.03015.x · Cited by 260
He, J., Borisevich, A. Y., Kalinin, S. V., et al. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.227203 · Cited by 254
Dielectric Properties of Sodium and Potassium Niobates
Matthias, B. T., & Remeika, J. P. (1951) · Physical Review · doi:10.1103/physrev.82.727 · Cited by 254
Bridging the Macroscopic and Atomistic Descriptions of the Electrocaloric Effect
Ponomareva, I., & Lisenkov, S. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.167604 · Cited by 253
Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
Appleby, D. J. R., Ponon, N. K., Kwa, K. S. K., et al. (2014) · Nano Letters · doi:10.1021/nl5017255 · Cited by 249
Gorfman, S. V., & Thomas, P. A. (2010) · Journal of Applied Crystallography · doi:10.1107/s002188981003342x · Cited by 248
Ma, C., & Tan, X. (2011) · Journal of the American Ceramic Society · doi:10.1111/j.1551-2916.2011.04670.x · Cited by 239
Ahn, C. W., Amarsanaa, G., Won, S. S., Chae, S. A., Lee, D. S., & Kim, I. W. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b08786 · Cited by 239
Pešić, M., Hoffmann, M., Richter, C., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201603182 · Cited by 234
Cheng, Y., Gao, Z., Ye, K. H., et al. (2022) · Nature Communications · doi:10.1038/s41467-022-28236-5 · Cited by 233
Designing lead-free antiferroelectrics for energy storage
Xu, B., Íñiguez, J., & Bellaïche, L. (2017) · Nature Communications · doi:10.1038/ncomms15682 · Cited by 231
Self-citationRandall, C. A., Fan, Z., Reaney, I. M., Chen, L., & Trolier-McKinstry, S. E. (2021) · Journal of the American Ceramic Society · doi:10.1111/jace.17834 · Cited by 230
Liu, X., Li, Y., & Hao, X. (2019) · Journal of Materials Chemistry A · doi:10.1039/c9ta02149c · Cited by 226
The tetragonal phase of Na0.5Bi0.5TiO3 – a new variant of the perovskite structure
Jones, G. O., & Thomas, P. A. (2000) · Acta Crystallographica Section B Structural Science · doi:10.1107/s0108768100001166 · Cited by 225
Samara, G. A. (1970) · Physical Review B · doi:10.1103/physrevb.1.3777 · Cited by 225
Park, M. H., Kim, H., Kim, Y. J., Moon, T., Kim, K. D., & Hwang, C. S. (2014) · Nano Energy · doi:10.1016/j.nanoen.2014.09.025 · Cited by 220
Structural investigation of AgNbO3phases using x-ray and neutron diffraction
Sciau, P., Kania, A., Dkhil, B., et al. (2004) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/16/16/004 · Cited by 212
Electrocaloric Effects in Some Ferroelectric and Antiferroelectric Pb(Zr, Ti)O3 Compounds
Thacher, P. D. (1968) · Journal of Applied Physics · doi:10.1063/1.1656478 · Cited by 211
Guo, Y., Liu, Y., Withers, R. L., et al. (2010) · Chemistry of Materials · doi:10.1021/cm102719k · Cited by 208
Trolliard, G., & Dorcet, V. (2008) · Chemistry of Materials · doi:10.1021/cm800464d · Cited by 203
Goh, Y., Cho, S.-H., Park, S. K., et al. (2020) · Nanoscale · doi:10.1039/d0nr00933d · Cited by 202
Structural changes underlying the diffuse dielectric response in AgNbO3
Levin, I., Krayzman, V., WOICIK, J. C., et al. (2009) · Physical Review B · doi:10.1103/physrevb.79.104113 · Cited by 201
Emergent ferroelectricity in subnanometer binary oxide films on silicon
Cheema, S., Shanker, N., Hsu, S., Rho, Y., Hsu, C., Stoica, V. A., Zhang, Z., Freeland, J. W., Shafer, P., Grigoropoulos, C. P., et al. (2022) · Science · doi:10.1126/science.abm8642 · Cited by 200
Structure of Ferroelectric Silver Niobate AgNbO3
Yashima, M., Matsuyama, S., Sano, R., et al. (2011) · Chemistry of Materials · doi:10.1021/cm103389q · Cited by 197
Zhao, Y., Hao, X., & Zhang, Q. (2014) · ACS Applied Materials & Interfaces · doi:10.1021/am502415z · Cited by 197
Lefkowitz, I., Łukaszewicz, K., & Megaw, H. D. (1966) · Acta Crystallographica · doi:10.1107/s0365110x66001592 · Cited by 193
Antiferroelectric Ceramics with Field-Enforced Transitions: A New Nonlinear Circuit Element
Jaffe, B. S. (1961) · Proceedings of the IRE · doi:10.1109/jrproc.1961.287917 · Cited by 191
Chen, L., Long, F., Qi, H., et al. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202110478 · Cited by 190
Damodaran, A. R., Breckenfeld, E., Chen, Z., Lee, S., & Martin, L. W. (2014) · Advanced Materials · doi:10.1002/adma.201400254 · Cited by 188
Self-citationProgress on Emerging Ferroelectric Materials for Energy Harvesting, Storage and Conversion
Wei, X., Domingo, N., Sun, Y., Balke, N., Dunin‐Borkowski, R. E., & Mayer, J. (2022) · Advanced Energy Materials · doi:10.1002/aenm.202201199 · Cited by 187
Self-citationSi Doped Hafnium Oxide—A “Fragile” Ferroelectric System
Richter, C., Schenk, T., Park, M. H., et al. (2017) · Advanced Electronic Materials · doi:10.1002/aelm.201700131 · Cited by 186
Park, M. H., Kim, H., Kim, Y. J., Lee, Y. H., Moon, T., Kim, K. D., Hyun, S. D., & Hwang, C. S. (2015) · Applied Physics Letters · doi:10.1063/1.4935588 · Cited by 185
Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures
Chen, S., Yuan, S., Hou, Z., Tang, Y., Zhang, J., Wang, T., Li, K., Zhao, W., Liu, X., Chen, L., et al. (2020) · Advanced Materials · doi:10.1002/adma.202000857 · Cited by 183
Self-citationXie, A., Fu, J., Zuo, R., et al. (2021) · Chemical Engineering Journal · doi:10.1016/j.cej.2021.132534 · Cited by 180
Temperature‐Dependent Electrical Properties of 0.94Bi 0.5 Na 0.5 TiO 3 –0.06BaTiO 3 Ceramics
Zhang, S., Kounga, A. B., Aulbach, E., et al. (2008) · Journal of the American Ceramic Society · doi:10.1111/j.1551-2916.2008.02778.x · Cited by 179
Thickness dependence of the nucleation field of triglycine sulphate
Kay, H. F., & Dunn, J. W. (1962) · Philosophical magazine · doi:10.1080/14786436208214471 · Cited by 179
Fernandez, A. N., Acharya, M., Lee, H., Schimpf, J., Jiang, Y., Lou, D., Tian, Z., & Martin, L. W. (2022) · Advanced Materials · doi:10.1002/adma.202108841 · Cited by 176
Nd-doped BiFeO3 ceramics with antipolar order
Karimi, S., Reaney, I. M., Levin, I., & Sterianou, I. (2009) · Applied Physics Letters · doi:10.1063/1.3097222 · Cited by 174
Chen, J., Qi, H., & Zuo, R. (2020) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.0c09876 · Cited by 174
Bratkovsky, A. M., & Levanyuk, A. P. (2005) · Physical Review Letters · doi:10.1103/physrevlett.94.107601 · Cited by 173
Subterahertz collective dynamics of polar vortices
Li, Q., Stoica, V. A., Paściak, M., Zhu, Y., Yuan, Y., Yang, T., McCarter, M. R., Das, S., Yadav, A. K., Park, S., et al. (2021) · Nature · doi:10.1038/s41586-021-03342-4 · Cited by 172
Self-citationElectric-field-driven monoclinic-to-rhombohedral transformation in Na 1/2 Bi 1/2 TiO 3
Rao, B. N., & Ranjan, R. (2012) · Physical Review B · doi:10.1103/physrevb.86.134103 · Cited by 170
Qi, H., Xie, A., Fu, J., et al. (2021) · Acta Materialia · doi:10.1016/j.actamat.2021.116710 · Cited by 169
Xie, A., Qi, H., & Zuo, R. (2020) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.0c00831 · Cited by 166
Structural and electrical properties of silver niobate and silver tantalate
FRANCOMBE, M. H., & Lewis, B. (1958) · Acta Crystallographica · doi:10.1107/s0365110x58000463 · Cited by 164
Shi, R., Pu, Y., Wang, W. C., Guo, X., Li, J., Yang, M., & Zhou, S. (2019) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2019.152356 · Cited by 163
Phase Transitions in Antiferroelectric PbHfO3
Shirane, G., & Pepinsky, R. (1953) · Physical Review · doi:10.1103/physrev.91.812 · Cited by 162
Local Structure Heterogeneity in Sm-Doped AgNbO 3 for Improved Energy-Storage Performance
Gao, J., Liu, Q., Dong, J., Wang, X., Zhang, S. J., & Li, J. (2020) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b20803 · Cited by 159
Ge, G., Shi, C. W., Chen, C., Shi, Y., Yan, F., Bai, H., Yang, J., Lin, J., Shen, B., & Zhai, J. (2022) · Advanced Materials · doi:10.1002/adma.202201333 · Cited by 158
Taylor, T. R., Hansen, P., Acikel, B., et al. (2002) · Applied Physics Letters · doi:10.1063/1.1459482 · Cited by 157
Li, P., Liao, W., Tang, Y., et al. (2017) · Journal of the American Chemical Society · doi:10.1021/jacs.7b04693 · Cited by 157
Enabling ultra-low-voltage switching in BaTiO3
Jiang, Y., Parsonnet, E., Qualls, A., Zhao, W., Susarla, S., Pesquera, D., Dasgupta, A., Acharya, M., Zhang, H., Gosavi, T. A., et al. (2022) · Nature Materials · doi:10.1038/s41563-022-01266-6 · Cited by 155
Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure
Gao, W., Khan, A. I., Martí, X., et al. (2014) · Nano Letters · doi:10.1021/nl502691u · Cited by 154
Electric-field-induced antiferroelectric to ferroelectric phase transition in polycrystalline NaNbO3
Zhang, M., Fulanović, L., Egert, S., et al. (2020) · Acta Materialia · doi:10.1016/j.actamat.2020.09.002 · Cited by 154
Zhang, L., Jing, R., Huang, Y., et al. (2022) · Journal of Materiomics · doi:10.1016/j.jmat.2022.01.007 · Cited by 153
Self-citationFerroelectric translational antiphase boundaries in nonpolar materials
Wei, X., Tagantsev, A. K., Kvasov, A., et al. (2014) · Nature Communications · doi:10.1038/ncomms4031 · Cited by 151
Self-citationModeling of Negative Capacitance in Ferroelectric Thin Films
Park, H. W., Roh, J., Lee, Y. B., et al. (2019) · Advanced Materials · doi:10.1002/adma.201805266 · Cited by 150
Enhancement of Ferroelectric Polarization Stability by Interface Engineering
Lu, H., Liu, X., Burton, J. D., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104398 · Cited by 147
Multiple Soft-Mode Vibrations of Lead Zirconate
Hlinka, J., Ostapchuk, T., Buixaderas, E., Kadlec, C., Kužel, P., Gregora, I., Kroupa, J., Savinov, M., Klíč, A., Drahokoupil, J., et al. (2014) · Physical Review Letters · doi:10.1103/physrevlett.112.197601 · Cited by 146
Mishra, S. K., Mittal, R., Pomjakushin, V., et al. (2011) · Physical Review B · doi:10.1103/physrevb.83.134105 · Cited by 145
Wang, P.-J., Zhou, D., Guo, H., Liu, W.-F., Su, J., Fu, M.-S., Singh, C., Trukhanov, S., & Trukhanov, A. (2020) · Journal of Materials Chemistry A · doi:10.1039/d0ta03304a · Cited by 145
Pertsev, N. A., & Koukhar, V. G. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.3722 · Cited by 143
Ramesh, R., & Schlom, D. G. (2002) · Science · doi:10.1126/science.1072855 · Cited by 142
Thermotropic phase boundaries in classic ferroelectrics
Lummen, T. T. A., Gu, Y., Wang, J., et al. (2014) · Nature Communications · doi:10.1038/ncomms4172 · Cited by 141
Dielectric Properties of Lead Zirconate and Barium‐Lead Zirconate
ROBERTS, S. (1950) · Journal of the American Ceramic Society · doi:10.1111/j.1151-2916.1950.tb14168.x · Cited by 140
Phase Transition in Lead Zirconate
Sawaguchi, E., Shirane, G., & Takagi, Y. (1951) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.6.333 · Cited by 139
Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films
Park, M. H., Kim, H., Kim, Y. J., et al. (2016) · Advanced Materials · doi:10.1002/adma.201602787 · Cited by 136
Ferroelectric-ferroelectric phase coexistence in Na 1/2 Bi 1/2 TiO 3
Rao, B. N., Fitch, A. N., & Ranjan, R. (2013) · Physical Review B · doi:10.1103/physrevb.87.060102 · Cited by 135
Zhu, L., Deng, S., Zhao, L., et al. (2023) · Nature Communications · doi:10.1038/s41467-023-36919-w · Cited by 135
Yoshida, S., Fujita, K., Akamatsu, H., et al. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201801856 · Cited by 133
Si, M., Lyu, X., Shrestha, P. R., et al. (2019) · Applied Physics Letters · doi:10.1063/1.5098786 · Cited by 133
Displacive Phase Transitions and Magnetic Structures in Nd-Substituted BiFeO 3
Levin, I., Tucker, M. G., Wu, H., et al. (2011) · Chemistry of Materials · doi:10.1021/cm1036925 · Cited by 132
Park, M. H., Kim, H., Lee, G., Park, J., Lee, Y. H., Kim, Y. J., Moon, T., Kim, K. D., Hyun, S. D., Park, H. W., et al. (2019) · Applied Physics Reviews · doi:10.1063/1.5118737 · Cited by 132
Mechanisms of imprint effect on ferroelectric thin films
Zhou, Y., Chan, H.-K., Lam, C., et al. (2005) · Journal of Applied Physics · doi:10.1063/1.1984075 · Cited by 131
Kim, K. D., Lee, Y. H., Gwon, T., et al. (2017) · Nano Energy · doi:10.1016/j.nanoen.2017.07.017 · Cited by 130
Subterahertz collective dynamics of polar vortices
Li, Q., Stoica, V. A., Pasciak, M. A., et al. (2021) · RePEc: Research Papers in Economics · Cited by 130
Self-citationZhao, Y., Hao, X., & Zhang, Q. (2014) · Journal of Materials Chemistry C · doi:10.1039/c4tc02381a · Cited by 129
Charge release of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films
Xu, B., Moses, P., Pai, N. G., et al. (1998) · Applied Physics Letters · doi:10.1063/1.120817 · Cited by 129
Self-citationVats, G., Kumar, A., Ortega, N. P., et al. (2016) · Energy & Environmental Science · doi:10.1039/c5ee03641k · Cited by 129
Removal of 90° domain pinning in (100) Pb(Zr0.15Ti0.85)O3 thin films by pulsed operation
Köhli, M., Muralt, P., & Setter, N. (1998) · Applied Physics Letters · doi:10.1063/1.121554 · Cited by 127
Thickness-dependence of the breakdown strength: Analysis of the dielectric and mechanical failure
Neusel, C., Jelitto, H., Schmidt, D., et al. (2014) · Journal of the European Ceramic Society · doi:10.1016/j.jeurceramsoc.2014.08.028 · Cited by 125
Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage
Ali, F., Liu, X., Zhou, D., Yang, X., Xu, J., Schenk, T., Müller, J., Schroeder, U. P., Cao, F., & Dong, X. (2017) · Journal of Applied Physics · doi:10.1063/1.4989908 · Cited by 125
Darlington, C. N. W., & Megaw, H. D. (1973) · Acta Crystallographica Section B · doi:10.1107/s0567740873006308 · Cited by 124
Novel Nanoscale Twinned Phases in Perovskite Oxides
Prosandeev, S. A., Wang, D., Ren, W., et al. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201201467 · Cited by 122
Ding, W., Zhang, Y., Tao, L., et al. (2020) · Acta Materialia · doi:10.1016/j.actamat.2020.07.012 · Cited by 121
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices
(2019) · Elsevier eBooks · doi:10.1016/c2017-0-01145-x · Cited by 118
Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
Lomenzo, P. D., Chung, C.-C., Zhou, C., Jones, J. L., & Nishida, T. (2017) · Applied Physics Letters · doi:10.1063/1.4985297 · Cited by 117
Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO 3 thin films
Liu, C., Si, Y., Zhang, H. G., et al. (2023) · Science · doi:10.1126/science.adj9669 · Cited by 116
Self-citationGuo, H., Shimizu, H., Mizuno, Y., & Randall, C. A. (2015) · Journal of Applied Physics · doi:10.1063/1.4921876 · Cited by 115
Chouprik, A. A., Spiridonov, M., Zarubin, S., et al. (2019) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.8b00046 · Cited by 115
Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering
Ge, J., Remiens, D., Dong, X., Chen, Y., Costecalde, J., Gao, F., Cao, F., & Wang, G. (2014) · Applied Physics Letters · doi:10.1063/1.4896156 · Cited by 114
Pyroelectric properties of (Na½Bi½)TiO3 ceramics
Hagiyev, M. S., Ismailzade, I. H., & Abiyev, A. K. (1984) · Ferroelectrics · doi:10.1080/00150198408221371 · Cited by 113
Guo, H., Shimizu, H., & Randall, C. A. (2015) · Applied Physics Letters · doi:10.1063/1.4930067 · Cited by 112
Li, T., Jiang, X., Li, J., et al. (2022) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.2c01287 · Cited by 112
The structural phase transitions in lead zirconate in super-high electric fields
Fesenko, O. E., Kolesova, R. V., & Sindeev, Y. G. (1978) · Ferroelectrics · doi:10.1080/00150197808237203 · Cited by 111
Huang, J., Qi, H., Gao, Y., et al. (2020) · Chemical Engineering Journal · doi:10.1016/j.cej.2020.125639 · Cited by 111
Jiang, X., Luo, L., Wang, B., et al. (2013) · Ceramics International · doi:10.1016/j.ceramint.2013.10.066 · Cited by 108
Li, Y. Z., Lin, J. L., Bai, Y., Li, Y., Zhang, Z. D., & Wang, Z. J. (2020) · ACS Nano · doi:10.1021/acsnano.0c00791 · Cited by 108
Substrate coherency driven octahedral rotations in perovskite oxide films
Rondinelli, J. M., & Spaldin, N. A. (2010) · Physical Review B · doi:10.1103/physrevb.82.113402 · Cited by 106
Antiferroelectric Behavior in Symmetric KNbO3/KTaO3 Superlattices
Sigman, J., Norton, D. P., Christen, H. M., et al. (2002) · Physical Review Letters · doi:10.1103/physrevlett.88.097601 · Cited by 105
Bellaïche, L., & Íñiguez, J. (2013) · Physical Review B · doi:10.1103/physrevb.88.014104 · Cited by 104
Stabilization of Competing Ferroelectric Phases of HfO2 under Epitaxial Strain
Qi, Y., Singh, S., Lau, C., Huang, F.-T., Xu, X., Walker, F. J., Ahn, C., Cheong, S., & Rabe, K. M. (2020) · Physical Review Letters · doi:10.1103/physrevlett.125.257603 · Cited by 104
Heterogeneous Equilibria in the Systems Li2O-, Ag2O-Nb2O5 and Oxide-Models
Reisman, A., & Holtzberg, F. (1958) · Journal of the American Chemical Society · doi:10.1021/ja01557a010 · Cited by 102
Discovery of an Above-Room-Temperature Antiferroelectric in Two-Dimensional Hybrid Perovskite
Wu, Z., Liu, X., Ji, C., Li, L., Wang, S., Yu, P., Tao, K., Sun, Z., Hong, M., & Luo, J. (2019) · Journal of the American Chemical Society · doi:10.1021/jacs.8b13827 · Cited by 102
Giant Negative Electrocaloric Effect in (Pb,La)(Zr,Sn,Ti)O3 Antiferroelectrics Near Room Temperature
Zhuo, F., Li, Q., Gao, J., et al. (2018) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b00744 · Cited by 100
High energy-storage performance of PLZS antiferroelectric multilayer ceramic capacitors
Liu, X., Li, Y., Sun, N., et al. (2019) · Inorganic Chemistry Frontiers · doi:10.1039/c9qi01416k · Cited by 100
Wang, X., Wang, X., Huan, Y., Li, C., Ouyang, J., & Wei, T. (2022) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.1c23914 · Cited by 99
Das System Wismutoxyd‐Eisenoxyd im Bereich von 0 bis 55 Mol% Eisenoxyd
Royen, P., & Swars, K. (1957) · Angewandte Chemie · doi:10.1002/ange.19570692407 · Cited by 98
Zhang, T., Tang, X., Liu, Q., et al. (2016) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/49/9/095302 · Cited by 98
Self-citationNegative-pressure-induced enhancement in a freestanding ferroelectric
Wang, J., Eerd, B. W.-V., Sluka, T., et al. (2015) · Nature Materials · doi:10.1038/nmat4365 · Cited by 97
Self-citationFirst-principles study of the multimode antiferroelectric transition in PbZrO3
Íñiguez, J., Stengel, M., Prosandeev, S. A., et al. (2014) · Physical Review B · doi:10.1103/physrevb.90.220103 · Cited by 97
Research works printed but not linked: 9
- Zhang, 2016, Energy-storage properties and high-temperature dielectric relaxation behaviors of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 ceramics, J Phys D: Appl Phys, 49
- Chaudhuri, 2011, Epitaxial strain stabilization of a ferroelectric phase in PbZrO3 thin films, Phys Rev B, 84
- A k, j k., 1999118933, Ag1-xNaxNbO3 (ANN) solid solutions: from disordered antiferroelectric AgNbO3 to normal antiferroelectric NaNbO3, J Phys Condens Matter
- Smolenskii, 1961, New materials of AIIBIVOVI type, Trans Sov Phys Solid State, 2, 2651
- Acharya, 2022, Exploring the Pb1-xSrxHfO3 System and Potential for High Capacitive Energy Storage Density and Efficiency, Adv Mater, 334, 2105967, 10.1002/adma.202105967 · DOI · Paper page
- Zhao, 2014, Energy-Storage Properties and Electrocaloric Effect of Pb(1–3x/2)LaxZr0.85Ti0.15O3 Antiferroelectric Thick Films. ACS Appl Mater, Interface, 6, 11633
- Landauer, 1976, Can capacitance be negative Collect Phenom, 2, 167
- Levin, 2009, Structural changes underlying the diffuse dielectric response in AgNbO3, Phys Rev B, 79, 10.1103/PhysRevB.79.104113 · DOI
- Nokhrin, 1998, Influence of La impurities on PbZrO3 dielectric permittivity, J Korean Phys Soc, 32, S308
Cited by
Sorted by citations
Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets
Duan, X., Zhang, J., Zhu, Z., et al. (2025) · Physical Review Letters · doi:10.1103/physrevlett.134.106801 · Cited by 197
Enhanced energy storage in antiferroelectrics via antipolar frustration
Yang, B., Liu, Y., Jiang, R.-J., Lan, S., Liu, S., Zhou, Z., Dou, L., Zhang, M., Huang, H., Chen, L., et al. (2025) · Nature · doi:10.1038/s41586-024-08505-7 · Cited by 150
Dai, S., Li, M., Wu, X., Wu, Y., Li, X., Hao, Y., & Luo, B. (2024) · Journal of Advanced Ceramics · doi:10.26599/jac.2024.9220904 · Cited by 71
Eglitis, R. I., Purans, J., Jia, R., et al. (2025) · Inorganics · doi:10.3390/inorganics13040100 · Cited by 33
Emerging Solid–State Thermal Switching Materials
Jia, J., Li, S., Chen, X., & Shigesato, Y. (2024) · Advanced Functional Materials · doi:10.1002/adfm.202406667 · Cited by 32
Metadata
- Authors
- Si, Y., Zhang, T., Liu, C., Das, S., Xu, B., Burkovsky, R. G., Wei, X.-K., & Chen, Z.
- Affiliations
- Harbin Institute of Technology (CN)
- Nanjing Normal University (CN)
- Indian Institute of Science Bangalore (IN)
- Soochow University (CN)
- Xiamen University (CN)
- Corresponding author
- Das, Sujit
- Wei, Xian-Kui
- Chen, Zuhuang
- Venue
- Progress in Materials Science
- Publisher
- Elsevier BV
- Published
- 2024-04
- Volume
- 142
- Pages
- 101231
- ISSN
- 0079-6425 (ISSN-L)
- OpenAlex
- W4390503066
- Semantic Scholar
- 6486611e33887aac6a0d590b086d58c637cd25b6
- Cited by
- 84
- References
- 442
- Citations by year
- 2026: 36 · 2025: 33 · 2024: 15
- FWCI
- 7.87
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Progress in Materials Science (publishedVersion)
- Universitas Pasundan institutional repositories & scientific journals (Universitas Pasundan) (submittedVersion)
- Funders
- Indian Institute of Science
- National Natural Science Foundation of China (12074277, 52206092, 52372105)
- Government of Jiangsu Province (JSSCBS20210315)
- Natural Science Foundation of Jiangsu Province (BK20210565)
- Xiamen University
- Fundamental Research Funds for the Central Universities
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- thin films, antiferroelectric phase transition, lattice strain, film thickness effects, surface and interface effects, stoichiometry, energy storage, solid-state cooling, thermal switch, actuators, memory devices
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
A language model drew the claims from the paper on 2026-10-27, under version 3 of the claim definition (model deepseek-v4.1-flash, prompt extract-v3).
A second model labelled each claim on 2026-10-27 (model jev-1.13-20260917, definition revision gold-guideline-v0.2).
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
