Cited by 11Semiconductor materials and devicesMetal and Thin Film MechanicsCopper Interconnects and Reliability

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Residual stress analysis of SiO2 films deposited by plasma-enhanced chemical vapor deposition

Choi, Jin-Kyung, Lee, J., Yoo, Ji-Beom, Maeng, Jong-Sun, Kim, Young-Man·2000·Surface and Coatings Technology

Overview

Integrity signals

Registry

Crossref · 10.1016/s0257-8972(00)00753-2

Cites

7 of 7 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • PECVD SiO2 has intrinsic stress highly dependent on the choice of precursor, RF power, substrate temperature, and gas flow rate.

    “One such example is SiO2 obtained through PECVD, which has an intrinsic stress highly dependent on the choice of precursor, RF power, substrate temperature, and gas flow rate [154].”

    From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [154]

Citations

Cites

Flagged first, then by citations

Research works printed but not linked: 1

  1. J.J. Hsieh, D.E. Ibbotson, J.A. Mucha, D.L. Flamm, VMIC Conference, 411 (1989).

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Metadata

Authors
Choi, J.-K., Lee, J., Yoo, J.-B., Maeng, J.-S., & Kim, Y.-M.
Affiliations
Sungkyunkwan University (KR)
Corresponding author
Choi, Jin-Kyung
Venue
Surface and Coatings Technology
Publisher
Elsevier BV
Published
2000-09
Volume
131
Issue
1-3
Pages
153-157
ISSN
0257-8972 (ISSN-L)
OpenAlex
W1983265996
Cited by
10
References
7
Citations by year
2026: 1 · 2019: 2 · 2018: 1
FWCI
0.43
Type
journal article
Language
en
Open access
closed
Locations
Surface and Coatings Technology (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Mechanics of Materials › Metal and Thin Film Mechanics
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
Keywords
residual stress, SiO2 thin films, silica, plasma-enhanced chemical vapor deposition, HMDS, silane, RF power, growth temperature, deposition parameters

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

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