Investigation for the Structural Stress of SiO2 Thin Films and Its Distribution on the Large-Wafer Created by Plasma Enhanced Chemical Vapor Deposition
Open accessAbstract
For a multilayered configuration of SiO2 film created by plasma enhanced chemical vapor deposition (PECVD), the thermal stress and growth-caused stress are two intrinsic stresses. In this work, based on the interactions of all the layers of film, a nonlinearly distributed structural stress over a large substrate is found. The numerical simulations for the nonlinear distribution of the structural stress and the uniform distributions of the two intrinsic stresses are carried out. As a result, the tensile structural stress decreases by ∼4x105MPa from center to edge of a 6” silicon wafer and the compressive growth-caused stress increases by ∼5x105MPa corresponding to the growth-rate increase of 40nm/s, which matches a ∼120MPa distribution of residual compressive stress obtained with in-situ measurements of film samples. In simulations, it is also discovered that the initial curvature of substrate has an impressive influence on the later grown film.
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Stress in thin films can be intrinsic, thermal, or structural.
“The stress can be intrinsic, thermal or structural [151].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [151]
The paper’s discussion of the two intrinsic stresses identifies thermal and growth-caused stress as intrinsic; its conclusion describes structural stress as an additional stress. The claim names stresses the paper discusses, but lists intrinsic and thermal as though they were separate categories, whereas the paper classifies thermal stress as intrinsic. (LLM, conf=0.83)
Experimental — accuracy not yet measuredIn manufacturing DBRs on large wafers, stress appears due to interactions of the thin film and substrate curvature, resulting in a nonlinear stress distribution across the wafer.
“Another key feature to take into account is that, in the case of manufacturing DBRs on large wafers, the stress appears due to the interactions of the thin film and the substrate curvature, resulting in a nonlinear stress distribution across the wafer [151].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [151]
Section II says interactions among film layers and the substrate generate structural stress that depends on curvature and position across the wafer. The Conclusions report a nonlinear distribution of structural stress. The paper studies PECVD SiO₂ films on large silicon wafers, however, and does not establish the finding specifically for DBR manufacturing. (LLM, conf=0.86)
Experimental — accuracy not yet measured
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- Authors
- Sun, D., Sun, Q., Xing, W., Sun, Z., Shang, H., Chang, L., Wang, X., Liu, P., & Hall, T.
- Affiliations
- Changchun University of Science and Technology (CN)
- Jilin Sino-Microelectronics Co. Ltd 2 , 99 Shenzhen Street, Jilin, JL 130031, China
- School of Science, Changchun University of Science and Technology 1 , 7089 Weixing Road, Changchun, JL 130022, China
- University of Ottawa (CA)
- Venue
- AIP Advances
- Publisher
- AIP Publishing
- Published
- 2018-08-01
- Volume
- 8
- Issue
- 8
- ISSN
- 2158-3226 (ISSN-L)
- OpenAlex
- W2888097411
- Cited by
- 7
- References
- 22
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 1 · 2019: 2 · 2018: 1
- FWCI
- 0.48
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- AIP Advances (publishedVersion, cc-by)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- uO Research (University of Ottawa) (submittedVersion, public-domain)
- University of Ottawa - Library
- Funders
- Changchun University of Science and Technology
- D&T Photonics Inc. with Nanjing 321 Grant
- Jilin Provincial Department of Science and Technology (20180101223JC)
- Jilin Sino-Microelectronics Co.Ltd
- Topics
- Physical Sciences › Engineering › Mechanics of Materials › Metal and Thin Film Mechanics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced MEMS and NEMS Technologies
- Keywords
- SiO2 thin films, structural stress, thermal stress, residual stress, nonlinear stress distribution, multilayer films, plasma-enhanced chemical vapor deposition, substrate curvature, growth rate (crystal and thin-film growth), tensile stress, compressive stress
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