The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Stress evaluation of chemical vapor deposited silicon dioxide films
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In the citing paper
“A well-known method to overcome the residual stress is increasing the substrate temperature; at the same time, increasing the deposition rate can further increase the tensile intrinsic stress due to local bond disorder and the appearance of voids [155].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [155]
Citations
Cites
The tension of metallic films deposited by electrolysis
Stoney, G. G. (1909) · Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character · doi:10.1098/rspa.1909.0021 · Cited by 4,872
The silicon-silicon dioxide system: Its microstructure and imperfections
Helms, C. R., & Poindexter, E. H. (1994) · Reports on Progress in Physics · doi:10.1088/0034-4885/57/8/002 · Cited by 423
Takato, N., Jinguji, K., Yasu, M., Toba, H., & Kawachi, M. (1988) · Journal of Lightwave Technology · doi:10.1109/50.4091 · Cited by 233
Kenyon, A. J., Trwoga, P. F., Federighi, M., et al. (1994) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/6/21/007 · Cited by 231
Measurement of the Elastic Constants of Silicon Single Crystals and Their Thermal Coefficients
McSkimin, H. J., Bond, W. L., Buehler, E., & Teal, G. K. (1951) · Physical Review · doi:10.1103/physrev.83.1080 · Cited by 122
Stress and Thermal-Expansion Coefficient of Chemical-Vapor-Deposited Glass Films
Sunami, H., Itoh, Y., & Sato, K. (1970) · Journal of Applied Physics · doi:10.1063/1.1658622 · Cited by 58
Growth of silica and phosphosilicate films
Baliga, B. J., & GHANDHI, S. K. (1973) · Journal of Applied Physics · doi:10.1063/1.1662384 · Cited by 56
Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications
Haque, M. S., Naseem, H. A., & Brown, W. D. (1995) · Journal of The Electrochemical Society · doi:10.1149/1.2048425 · Cited by 35
Cobianu, C., & Pavelescu, C. (1983) · Thin Solid Films · doi:10.1016/0040-6090(83)90052-4 · Cited by 34
Inokuma, T., He, L., Kurata, Y., et al. (1995) · Journal of The Electrochemical Society · doi:10.1149/1.2044298 · Cited by 28
Research works printed but not linked: 2
- Hoffman, 1966, Phys. Thin Films, 3, 211
- Thermophysical Properties of Matter, Thermal Expansion, Vol. 13, The TPRC Data Series Thermophysical Properties and Research Center, Purdue University, 1977, p. 154, 358.
Cited by
Metal Oxide Thin Films for Advanced Photonic Applications
Stîngescu, M.-L., Șopronyi, M.-A., Antohe, Ș., & Scărișoreanu, N.-D. (2026) · Crystals · doi:10.3390/cryst16030164 · Cited by 2
“A well-known method to overcome the residual stress is increasing the substrate temperature; at the same time, increasing the deposition rate can further increase the tensile intrinsic stress due to local bond disorder and the appearance of voids [155].”
Metadata
- Authors
- Maeda, M., & Itsumi, M.
- Affiliations
- Kanazawa Institute of Technology (JP)
- NTT (Japan) (JP)
- Venue
- Physica B: Condensed Matter
- Publisher
- Elsevier BV
- Published
- 2002-11
- Volume
- 324
- Issue
- 1-4
- Pages
- 167-172
- ISSN
- 0921-4526 (ISSN-L)
- OpenAlex
- W1974329345
- Cited by
- 3
- References
- 13
- Citations by year
- 2015: 1
- FWCI
- 0.35
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.elsevier.com/tdm/userlicense/1.0/ (tdm)
- Locations
- Physica B Condensed Matter (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Mechanics of Materials › Metal and Thin Film Mechanics
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
- Keywords
- SiO2 thin films, chemical vapor deposition, intrinsic stress, tensile stress, oxygen partial pressure, deposition rate, substrate temperature, SiO4 tetrahedra, voids
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Stress evaluation of chemical vapor deposited silicon dioxide films. https://app.cochat.ai/papers/10.1016/s0921-4526(02)01291-7
- The paper
- Maeda, M., & Itsumi, M. (2002). Stress evaluation of chemical vapor deposited silicon dioxide films. Physica B: Condensed Matter. https://doi.org/10.1016/s0921-4526(02)01291-7
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
