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Fundamentals of Modern VLSI Devices

Taur, Yuan, Ning, Tak H.·2009·Cambridge University Press eBooks

Abstract

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

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Metadata

Authors
Taur, Y., & Ning, T. H.
Venue
Cambridge University Press eBooks
Published
2009-08-06
OpenAlex
W1661368752
Cited by
2,922
References
0
FWCI
103.11
Type
book
Language
pt
Open access
closed

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CoChat. (2026). Citation check: Fundamentals of Modern VLSI Devices. https://app.cochat.ai/papers/10.1017/cbo9781139195065
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Taur, Y., & Ning, T. H. (2009). Fundamentals of Modern VLSI Devices. Cambridge University Press eBooks. https://doi.org/10.1017/cbo9781139195065

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.