The DOI matches its Crossref record; 41 of the 41 references it cites were found in a registry or an index.
Manganese Doping of Monolayer MoS2: The Substrate Is Critical
Abstract
Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS2) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations (i.e., SiO2 and sapphire) preclude Mn incorporation and merely lead to defective MoS2. The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
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From Bulk to Monolayer MoS2: Evolution of Raman Scattering
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Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
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Self-citationEmerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
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Vertical and in-plane heterostructures from WS2/MoS2 monolayers
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Self-citationGrains and grain boundaries in highly crystalline monolayer molybdenum disulphide
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Cited by
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Azcatl, A., Qin, X., Prakash, A., Zhang, C., Cheng, L., Wang, Q., Lu, N., Kim, M. J., Kim, J., Cho, K., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01853 · Cited by 491
Self-citationA two-dimensional Fe-doped SnS2 magnetic semiconductor
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Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Doping engineering and functionalization of two-dimensional metal chalcogenides
Luo, P., Zhuge, F., Zhang, Q., Chen, Y., Lv, L., Huang, Y., Li, H., & Zhai, T. (2019) · Nanoscale Horizons · doi:10.1039/c8nh00150b · Cited by 339
Metadata
- Authors
- Zhang, K., Feng, S., Wang, J., Azcatl, A., Lu, N., Addou, R., Wang, N., Zhou, C., Lerach, J., Bojan, V., Kim, M. J., Chen, L.-Q., Wallace, R. M., Terrones, M., Zhu, J., & Robinson, J. A.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-09-11
- Volume
- 15
- Issue
- 10
- Pages
- 6586-6591
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2175102397
- Cited by
- 406
- References
- 41
- FWCI
- 17.45
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhang, K., Feng, S., Wang, J., Azcatl, A., Lu, N., Addou, R., Wang, N., Zhou, C., Lerach, J., Bojan, V., Kim, M. J., Chen, L.-Q., Wallace, R. M., Terrones, M., Zhu, J., & Robinson, J. A. (2015). Manganese Doping of Monolayer MoS2: The Substrate Is Critical. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b02315
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