Wafer-Scale Fabrication of 42° Rotated Y-Cut LiTaO 3 -on-Insulator (LTOI) Substrate for a SAW Resonator
Abstract
A high-performance filter is the key component in 5G communication. A surface acoustic wave (SAW) resonator fabricated on a piezoelectric thin film instead of piezoelectric bulk substrate can achieve a higher quality factor ( Q ) and a lower temperature coefficient of frequency (TCF). Here we performed the fabrication of 4 in. 42° rotated Y-cut LiTaO 3 -on-insulator (LTOI) hybrid substrate applied for the surface acoustic wave (SAW) radio-frequency (RF) resonators. This heterogeneous substrate combining a submicrometer single crystalline LT thin film on a Si wafer was achieved by using the ion-cut process with direct wafer bonding. The kinetics of surface blistering and the defects evolution in 75 keV H + implanted LT samples were investigated by annealing at various temperatures ranging from 170 to 230 °C. The activation energy for forming the blistering crack is around 1.34 eV. After direct wafer bonding, a wafer-scale LT thin film with single crystalline quality was successfully transferred onto the Si substrate. The crystalline quality was further improved via a postannealing at 400 °C, which is demonstrated by the reduction of the full width at half-maximum of the XRD rocking curve from 167 to 48 arcsec. The roughness of the blistering surface of the LT thin film was significantly reduced from 12 to 0.2 nm by an optimized chemical mechanical polishing (CMP) process, in which the damage layer of 30 nm was removed as well. Finally, a 350 MHz one-port SAW resonator based on the fabricated LTOI substrate was demonstrated.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
LiTaO3 has already entered mass production due to its use in 5G radio frequency filters.
“Compared to the economic limitations caused by the lack of a large consumption market for LN in insulator structures (LNOI), LT has already entered mass production due to its use in 5G radio frequency filters [182,183].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [182]
Cites
SRIM – The stopping and range of ions in matter (2010)
Ziegler, J. F., Ziegler, M. D., & Biersack, J. P. (2010) · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms · doi:10.1016/j.nimb.2010.02.091 · Cited by 11,412 · see citing works
After 60 years: A new formula for computing quality factor is warranted
Feld, D. A., Parker, R., Ruby, R. C., et al. (2008) · Proceedings/Proceedings - IEEE Ultrasonics Symposium · doi:10.1109/ultsym.2008.0105 · Cited by 300 · see citing works
High-Performance SAW Resonator on New Multilayered Substrate Using LiTaO 3 Crystal
Takai, T., Iwamoto, H., Takamine, Y., et al. (2017) · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · doi:10.1109/tuffc.2017.2738119 · Cited by 279 · see citing works
Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
Tong, Q.-Y., Gutjahr, K., Hopfe, S., et al. (1997) · Applied Physics Letters · doi:10.1063/1.118586 · Cited by 225 · see citing works
Accurate Extraction of Large Electromechanical Coupling in Piezoelectric MEMS Resonators
Lu, R., Li, M., Yang, Y., et al. (2019) · Journal of Microelectromechanical Systems · doi:10.1109/jmems.2019.2892708 · Cited by 156 · see citing works
Heterogeneous Integration of Compound Semiconductors
Moutanabbir, O., & Gösele, U. (2010) · Annual Review of Materials Research · doi:10.1146/annurev-matsci-070909-104448 · Cited by 152 · see citing works
Wafer Bonding and Layer Splitting for Microsystems
Tong, Q.-Y., & Gösele, U. (1999) · Advanced Materials · doi:10.1002/(sici)1521-4095(199912)11:17 · Cited by 135 · see citing works
Toward High‐Quality Epitaxial LiNbO 3 and LiTaO 3 Thin Films for Acoustic and Optical Applications
Bartasyte, A., Margueron, S. H., Baron, T., Oliveri, S., & Boulet, P. (2017) · Advanced Materials Interfaces · doi:10.1002/admi.201600998 · Cited by 130 · see citing works
Nucleation and growth of platelets in hydrogen-ion-implanted silicon
Nastasi, M., Höchbauer, T., Lee, J.-K., et al. (2005) · Applied Physics Letters · doi:10.1063/1.1900309 · Cited by 99 · see citing works
Nanodomain manipulation for ultrahigh density ferroelectric data storage
Cho, Y., Hashimoto, S., Odagawa, N., et al. (2006) · Nanotechnology · doi:10.1088/0957-4484/17/7/s06 · Cited by 85 · see citing works
Growth of tantalum oxide and lithium tantalate thin films by molecular beam epitaxy
Gitmans, F., Sitar, Z., & Günter, P. (1995) · Vacuum · doi:10.1016/0042-207x(95)00077-1 · Cited by 57 · see citing works
Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations
Bai, X., Shuai, Y., Gong, C., et al. (2017) · Applied Surface Science · doi:10.1016/j.apsusc.2017.10.184 · Cited by 43 · see citing works
Chao, Y.-L., Scholz, R. W., Reiche, M., et al. (2006) · Japanese Journal of Applied Physics · doi:10.1143/jjap.45.8565 · Cited by 40 · see citing works
Thermodynamic model of hydrogen-induced silicon surface layer cleavage
Han, W., & Yu, J. (2001) · Journal of Applied Physics · doi:10.1063/1.1370109 · Cited by 39 · see citing works
Singh, R. V., Christiansen, S. H., Moutanabbir, O., et al. (2010) · Journal of Electronic Materials · doi:10.1007/s11664-010-1334-x · Cited by 39 · see citing works
Microstructural evolution in H ion induced splitting of freestanding GaN
Moutanabbir, O., Scholz, R. W., Senz, S., et al. (2008) · Applied Physics Letters · doi:10.1063/1.2955832 · Cited by 37 · see citing works
Strain evolution in hydrogen-implanted silicon
Miclaus, C., & Goorsky, M. S. (2003) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/36/10a/336 · Cited by 36 · see citing works
Efficient ion-slicing of InP thin film for Si-based hetero-integration
Lin, J., You, T., Wang, M., et al. (2018) · Nanotechnology · doi:10.1088/1361-6528/aae281 · Cited by 35 · see citing works
Self-citationApplicability Investigation of SAW Devices in the 3 to 5 GHz range
Kimura, T., Omura, M., Kishimoto, Y., et al. (2018) · IEEE MTT-S International Microwave Symposium digest · doi:10.1109/mwsym.2018.8439144 · Cited by 34 · see citing works
Effects of Membrane Thickness on the Pyroelectric Properties of LiTaO3 Thin Film IR Detectors
Chan, C.-C., Kao, M., & Chen, Y. (2005) · Japanese Journal of Applied Physics · doi:10.1143/jjap.44.951 · Cited by 33 · see citing works
Properties of LiTaO3Thin Films Derived by a Diol-Based Sol–Gel Process
Kao, M., Lee, M., Wang, C.-M., et al. (2002) · Japanese Journal of Applied Physics · doi:10.1143/jjap.41.2982 · Cited by 30 · see citing works
Huang, K., Jia, Q., You, T., et al. (2017) · Scientific Reports · doi:10.1038/s41598-017-15094-1 · Cited by 24 · see citing works
Self-citationWernberg, A. A., Braunstein, G. H., & Gysling, H. J. (1993) · Applied Physics Letters · doi:10.1063/1.110409 · Cited by 22 · see citing works
RF magnetron-sputtering deposition of pyroelectric lithium tantalate thin films on ruthenium dioxide
Combette, P., Nougaret, L., Giani, A., et al. (2007) · Journal of Crystal Growth · doi:10.1016/j.jcrysgro.2007.02.006 · Cited by 22 · see citing works
Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing
Jia, Q., Huang, K., You, T., et al. (2018) · Applied Physics Letters · doi:10.1063/1.5025889 · Cited by 22 · see citing works
Self-citation3-inch single-crystal LiTaO 3 films onto metallic electrode using Smart Cut TM technology
Tauzin, A., Dechamp, J., Madeira, F., et al. (2008) · Electronics Letters · doi:10.1049/el:20081057 · Cited by 21 · see citing works
Takagi, H., Maeda, R., Hosoda, N., et al. (1999) · Japanese Journal of Applied Physics · doi:10.1143/jjap.38.l1559 · Cited by 20 · see citing works
Moutanabbir, O., & Gösele, U. (2010) · Journal of Electronic Materials · doi:10.1007/s11664-010-1100-0 · Cited by 19 · see citing works
Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films
Levy, M., Osgood, R. M., Bhalla, A. S., et al. (2000) · Applied Physics Letters · doi:10.1063/1.1314294 · Cited by 17 · see citing works
Liu, W., Zhan, D., Ma, X., et al. (2008) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2830691 · Cited by 16 · see citing works
Study of the effect of H implantation and annealing on LiTaO3 surface blistering
Ma, C., Lu, F., & Ma, Y. (2014) · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · doi:10.1016/j.nimb.2014.09.017 · Cited by 16 · see citing works
Fabrication of ion‐sliced lithium niobate slabs using helium ion implantation and Cu–Sn bonding
Xiang, B., Guan, J., Jiao, Y., & Wang, L. (2014) · physica status solidi (a) · doi:10.1002/pssa.201431138 · Cited by 14 · see citing works
Blistering and cracking of LiTaO3 single crystal under helium ion implantation
Ma, C., Lu, F., & Ma, Y. (2014) · Applied Physics A · doi:10.1007/s00339-014-8821-5 · Cited by 9 · see citing works
Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure
Chang, Y., Zhang, M., Deng, C., et al. (2015) · Applied Surface Science · doi:10.1016/j.apsusc.2015.03.198 · Cited by 7 · see citing works
Visualized strain profile in the process of crystal ion slicing of LiTaO 3
Ma, C., Lu, F., Xu, B., & Fan, R. (2016) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/49/20/205301 · Cited by 7 · see citing works
Evolution of optical absorption and strain in LiTaO3 crystal implanted by energetic He-ion
Pang, L., Wang, Z. G., Sun, J., Yao, C., Gao, X., Wei, K., Cui, M., Li, B. S., Shen, T. L., Sheng, Y., et al. (2015) · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · doi:10.1016/j.nimb.2014.11.117 · Cited by 6 · see citing works
Flagged first, then by citations
Cited by
Sorted by citations
Lithium Tantalate Photonic Integrated Circuits for Volume Manufacturing
Wang, C., Li, Z., Riemensberger, J., Lihachev, G., Churaev, M., Kao, W., Ji, X., Zhang, J., Blesin, T., Davydova, A., et al. (2024) · Nature · doi:10.1038/s41586-024-07369-1 · Cited by 248 · see citing works
Self-citationMetal Oxide Thin Films for Advanced Photonic Applications
Stîngescu, M.-L., Șopronyi, M.-A., Antohe, Ș., & Scărișoreanu, N.-D. (2026) · Crystals · doi:10.3390/cryst16030164 · Cited by 2 · see citing works
- Authors
- Yan, Y., Huang, K., Zhou, H., Zhao, X., Li, W., Li, Z., Yi, A., Huang, H., Lin, J., Zhang, S., Zhou, M., Xie, J., Zeng, X., Liu, R., Yu, W., You, T., & Ou, X.
- Affiliations
- Chinese Academy of Sciences (CN)
- Beijing Zhongkexin Electronics Equipment Co., Ltd., Beijing 101111, China
- Kingstone Semiconductor Joint Stock Co., Ltd., Pudong, Shanghai, China
- Corresponding author
- Ou, Xin
- ORCID
- Venue
- ACS Applied Electronic Materials
- Publisher
- American Chemical Society (ACS)
- Published
- 2019-07-12
- Volume
- 1
- Issue
- 8
- Pages
- 1660-1666
- ISSN
- 2637-6113 (ISSN-L)
- OpenAlex
- W2958371333
- Cited by
- 83
- References
- 36
- Citations by year
- 2026: 18 · 2025: 11 · 2024: 13 · 2023: 12 · 2022: 14 · 2021: 14 · 2020: 1
- FWCI
- 2.55
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- ACS Applied Electronic Materials (publishedVersion)
- Funders
- Ministry of Science and Technology of the People's Republic of China (2017YFB0406400)
- Science and Technology Commission of Shanghai Municipality (19YF1456200, 19YF1456400, 17511106202, 19XD1404600)
- National Natural Science Foundation of China (11622545, 61851406, 61874128, U1732268, 11705262)
- Chinese Academy of Sciences (GJHZ201950, QYZDY-SSW-JSC032)
- Topics
- Physical Sciences › Engineering › Biomedical Engineering › Acoustic Wave Resonator Technologies
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave Dielectric Ceramics Synthesis
- Keywords
- surface acoustic wave resonators, wafer-scale fabrication, direct wafer bonding, surface blistering, hydrogen implantation, post-implantation annealing, activation energy, chemical mechanical polishing, RF resonators, quality factor, temperature coefficient of frequency
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
